ADVANCE
INFORMATION
CY7C1481V33
CY7C1483V33
CY7C1487V33
2M x 36/4M x 18/1M x 72 Flow-through SRAM
Features
• Supports 133-MHz bus operations
• 2M x 36/4M x 18/1M x 72 common I/O
• Fast clock-to-output times
— 5.5 ns (for 150-MHz device)
— 6.5 ns (for 133-MHz device)
— 7.5 ns (for 117-MHz device)
— 8.5 ns (for 100-MHz device)
• Single 3.3V –5% and +5% power supply V
DD
• Separate V
DDQ
for 3.3V or 2.5V
• Byte Write Enable and Global Write control
• Burst Capability—linear or interleaved burst order
• Automatic power-down available using ZZ mode or CE
deselect
• JTAG boundary scan for BGA packaging version
• Available in 119-ball bump BGA, 100-pin TQFP and
165-ball FBGA packages (CY7C1481V33 and
CY7C1483V33). 209 FBGA package for CY7C1487V33
positive-edge-triggered clock input (CLK). The synchronous
inputs include all addresses, all data inputs, address-pipelining
Chip Enable (CE), Burst Control Inputs (ADSC, ADSP, and
ADV), Write Enables (BW
a
, BW
b
, BW
c
, BW
d
, BW
e
, BW
f
, BW
g
and BW
h
, BWE), and Global Write (GW).
Asynchronous inputs include the Output Enable (OE) and
Burst Mode Control (MODE). The data outputs (Q), enabled
by OE, are also asynchronous.
Addresses and chip enables are registered with either
Address Status Processor (ADSP) or address status controller
(ADSC) input pins. Subsequent burst addresses can be inter-
nally generated as controlled by the Burst Advance Pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate self-timed WRITE cycle. WRITE cycles can be one
to four bytes wide as controlled by the write control inputs.
Individual byte write allows individual byte to be written. BW
a
controls DQ1–DQ8 and DP1. BW
b
controls DQ9–DQ16 and
DP2. BW
c
controls DQ17–DQ24and DP3. BW
d
controls
DQ25–DQ32 and DP4. BW
e
controls DQ33–DQ40 and DP5.
BW
f
controls DQ41–DQ48 and DP6. BW
g
controls
DQ49–DQ56 and DP7. BW
h
controls DQ57–DQ64 and DP8.
BW
a
, BW
b
BW
c
, BW
d
, BW
e
, BW
f
, BW
g
, and BW
h
can be active
only with BWE being LOW. GW being LOW causes all bytes
to be written. WRITE pass-through capability allows written
data available at the output for the immediately next READ
cycle. This device also incorporates pipelined enable circuit for
easy depth expansion without penalizing system performance.
All
inputs
and
outputs
CY7C1483V33/CY7C1487V33
JESD8-5-compatible.
of
are
theCY7C1481V33/
JEDEC-standard
Functional Description
The Cypress Synchronous Burst SRAM family employs
high-speed, low power CMOS designs using advanced
single-layer polysilicon, triple-layer metal technology. Each
memory cell consists of six transistors.
The CY7C1481V33/CY7C1483V33/CY7C1487V33 SRAMs
integrate 2,097,152 x 36 / 4,194,304 x18 and 1,048,576x 72
SRAM cells with advanced synchronous peripheral circuitry
and a 2-bit counter for internal burst operation. All
synchronous inputs are gated by registers controlled by a
Logic Block Diagram CY7C1481V33 - 2M x 36
MODE
(A
[1;0]
) 2
CLK
ADV
ADSC
ADSP
A
[20:0]
GW
BWE
BW
d
BW
c
D
BW
b
D
BW
a
CE
1
CE
2
CE
3
D
BURST Q
0
CE COUNTER
Q
1
CLR
Q
20
18
D
ADDRESS
CE REGISTER
D
DQ
d
, DP
d
BYTEWRITE
REGISTERS
DQ
c
, DP
c
BYTEWRITE
REGISTERS
DQ
b
, DP
b
BYTEWRITE
REGISTERS
DQ
a
, DP
a
BYTEWRITE
REGISTERS
ENABLE CE
REGISTER
Q
18
20
2M X36
MEMORY
ARRAY
D
Q
Q
Q
36
Q
36
D ENABLE DELAY Q
REGISTER
OE
ZZ
SLEEP
CONTROL
INPUT
REGISTERS
CLK
DQ
a,b,c,d
DP
a,b,c,d
Cypress Semiconductor Corporation
Document #: 38-05284 Rev. **
•
3901 North First Street
•
San Jose
•
CA 95134 • 408-943-2600
Revised August 5, 2002
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