MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA30H3340M
330-400MHz 30W 12.5V MOBILE RADIO
BLOCK DIAGRAM
DESCRIPTION
The RA30H3340M is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 330- to
400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
V
GG
=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>30W,
η
T
>40% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• 66 x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
2
3
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA30H3340M-E01
RA30H3340M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA30H3340M
MITSUBISHI ELECTRIC
1/9
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H3340M
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=330-400MHz,
Z
G
=Z
L
=50Ω
RATING
17
6
100
45
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
Above Parameters are guaranteed independently
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
MIN
330
30
TYP
MAX
400
UNIT
MHz
W
%
V
DD
=12.5V,
V
GG
=5V,
P
in
=50mW
40
-25
3:1
0.6
Harmonic
dBc
—
mA
—
—
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=10.0-15.2V, P
in
=25-70mW,
P
out
<40W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=30W (V
GG
control),
Load VSWR=20:1
No parasitic oscillation
No degradation or destroy
All Parameters, Conditions, Ratings and Limits are subject to change without notice
RA30H3340M
MITSUBISHI ELECTRIC
2/9
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H3340M
2
nd
, 3
rd
HARMONICS versus FREQUENCY
-20
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
60
OUTPUT POWER P
out
(W)
P
out
120
TOTAL EFFICIENCY
HARMONICS (dBc)
100
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
ρ
in
(-)
50
40
30
20
10
ρ
in
η
T
-30
-40
-50
-60
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
nd
80
60
40
20
INPUT VSWR
η
T
(%)
2
0
0
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
3
-70
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
rd
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
50
40
30
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
f=330MHz,
V
DD
=12.5V,
V
GG
=5V
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
Gp
12
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
10
DRAIN CURRENT
I
DD
(A)
8
I
DD
12
P
out
50
40
30
20
10
0
-10
-5
0
5
I
DD
10
8
6
4
DRAIN CURRENT
6
4
2
0
f=365MHz,
V
DD
=12.5V,
V
GG
=5V
2
0
10
15
20
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
50
40
30
I
DD
Gp
P
out
12
DRAIN CURRENT
I
DD
(A)
10
8
6
4
f=400MHz,
V
DD
=12.5V,
V
GG
=5V
20
10
0
-10
-5
0
5
10
15
INPUT POWER P
in
(dBm)
20
2
0
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER P
out
(W)
OUTPUT POWER P
out
(W)
90
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
16
f=330MHz,
V
GG
=5V,
P
i n
=50mW
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
90
DRAIN CURRENT I
DD
(A)
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
16
f=365MHz,
V
GG
=5V,
P
i n
=50mW
P
out
P
out
I
D D
10
8
6
4
2
0
I
D D
12
10
8
6
4
2
0
RA30H3340M
MITSUBISHI ELECTRIC
3/9
DRAIN CURRENT I
DD
(A)
18
16
14
12
18
16
14
I
DD
(A)
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H3340M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER P
out
(W)
90
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
16
I
D D
f=400MHz,
V
GG
=5V,
P
in
=50mW
P
out
12
10
8
6
4
2
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
OUTPUT POWER P
out
(W)
50
40
30
20
10
0
2
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
I
D D
f=330MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
DRAIN CURRENT I
DD
(A)
18
16
14
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
50
40
30
I
D D
f=365MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
12
10
8
6
4
2
0
12
DRAIN CURRENT I
DD
(A)
10
8
6
4
2
0
2
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
20
10
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
OUTPUT POWER P
out
(W)
50
40
30
20
10
0
2
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
I
D D
f=400MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
12
DRAIN CURRENT I
DD
(A)
10
8
6
4
2
0
RA30H3340M
MITSUBISHI ELECTRIC
4/9
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H3340M
OUTLINE DRAWING
(mm)
66.0 ±0.5
3.0 ±0.3
7.25 ±0.8
60.0 ±0.5
51.5 ±0.5
2-R2 ±0.5
21.0 ±0.5
9.5 ±0.5
5
1
2
3
4
14.0 ±1
2.0 ±0.5
Ø0.45 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
3.1 +0.6/-0.4
0.09 ±0.02
7.5 ±0.5
(50.4)
2.3 ±0.3
4.0 ±0.3
(9.88)
17.0 ±0.5
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
RA30H3340M
MITSUBISHI ELECTRIC
5/9
2 Dec 2002
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