GS9013
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (NPN)
TO-226AA ( TO-92)
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
Features
•
NPN Silicon Epitaxial Planar Transistors for switching
and amplifier applications. Especially suitable for AF-
driver stages and low power output stages such as
portable radios in class-B push-pull operation.
• Complementary to GS9012
Mechanical Data
Case:
TO-92 Plastic Package
Weight:
approx. 0.18g
Packaging Codes/Options:
E6/Bulk- 5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
max.
∅
0.022 (0.55)
0.098 (2.5)
Bottom
View
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation at T
amb
= 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
R
θJA
T
j
T
S
Ratings at 25°C ambient temperature unless otherwise specified
Value
40
20
5
500
625
(1)
200
(1)
150
–55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
°C
Notes:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
Document Number 88196
10-May-02
www.vishay.com
1
GS9013
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Parameter
Current Gain Group D
E
F
G
H
J
= 25°C unless otherwise noted)
Symbol
Test Condition
V
CE
= 1V, I
C
= 50mA
Min
64
78
96
112
144
40
20
40
5
—
—
—
—
0.6
Typ
—
—
—
—
—
120
—
—
—
—
—
0.16
0.91
0.67
Max
91
112
135
166
202
—
—
—
—
100
100
0.6
1.2
0.7
Unit
DC Current Gain
h
FE
—
V
CE
= 1V, I
C
= 500mA
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
I
C
= 1mA, I
B
= 0
I
C
= 100µA, I
E
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 25V, I
E
= 0
V
EB
= 3V, I
C
= 0
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 1V, I
C
= 10mA
V
V
V
nA
nA
V
V
V
www.vishay.com
2
Document Number 88196
10-May-02
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