1N5820 thru 1N5822
Vishay General Semiconductor
Schottky Barrier Rectifier
FEATURES
•
•
•
•
•
•
•
•
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
DO-201AD
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
3.0 A
20 V, 30 V, 40 V
80 A
0.475 V, 0.500 V, 0.525 V
125 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
MECHANICAL DATA
Case:
DO-201AD
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Non-repetitive peak reverse voltage
Maximum average forward rectified current 0.375" (9.5 mm) lead
length at T
L
= 95 °C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
V
RSM
I
F(AV)
I
FSM
T
J
, T
STG
1N5820
20
14
20
24
1N5821
30
21
30
36
3.0
80
- 65 to + 125
1N5822
40
28
40
48
UNIT
V
V
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
(1)
Maximum instantaneous forward voltage
(1)
Maximum average reverse current at rated
DC blocking voltage
(1)
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Document Number: 88526
Revision: 20-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
155
TEST CONDITIONS
3.0
9.4
T
A
= 25 °C
T
A
= 100 °C
SYMBOL
V
F
V
F
I
R
1N5820
0.475
0.850
1N5821
0.500
0.900
2.0
20
1N5822
0.525
0.950
UNIT
V
V
mA
1N5820 thru 1N5822
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
(1)
Note:
(1) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7 mm) lead length with 2.5 x 2.5" (63.5 x 63.5 mm) copper pad
SYMBOL
R
θJA
R
θJL
1N5820
1N5821
40
10
1N5822
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
1N5820-E3/54
1N5820-E3/73
UNIT WEIGHT (g)
1.08
1.08
PREFERRED PACKAGE CODE
54
73
BASE QUANTITY
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
4.0
100
T
J
= 125 °C
3.0
Instantaneous Forward Current (A)
Average Forward Current (A)
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
10
Pulse
Width
= 300
µs
1
%
Duty Cycle
2.0
1
T
J
= 25 °C
0.1
1.0
0
0
20
40
60
80
100
120
140
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Lead Temperature (°C)
Instantaneous Forward
Voltage
(V)
Figure 1. Forward Current Derating Curve
Figure 3. Typical Instantaneous Forward Characteristics
80
10
T
J
= T
J
Max.
8.3
ms Single Half Sine-Wave
Instantaneous Reverse Current (mA)
Peak Forward Surge Current (A)
70
60
50
40
30
20
10
1
T
J
= 125 °C
1
T
J
= 75 °C
0.1
0.01
T
J
= 25 °C
0.001
10
100
0
20
40
60
80
100
Number
of Cycles at 60 Hz
Percent of Rated Peak Reverse
Voltage
(%)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 4. Typical Reverse Characteristics
www.vishay.com
156
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88526
Revision: 20-Aug-07
1N5820 thru 1N5822
Vishay General Semiconductor
1000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
Transient Thermal Impedance (°C/W)
100
Junction Capacitance (pF)
10
100
1
10
0.1
1
10
0.1
0
0.1
1
10
100
Reverse
Voltage
(V)
t - Pulse Duration (s)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Document Number: 88526
Revision: 20-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
157
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
