PD-93920A
RIC7113E4
RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
Features
n
Total dose capability to 100K Rad (Si)
n
Floating channel designed for bootstrap operation
n
Fully operational to +400V
n
Tolerant to negative transient voltage
n
dV/dt immune
n
Gate drive supply range from 10 to 20V
n
Undervoltage lockout for both channels
n
Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n
CMOS Schmitt-triggered inputs with pull-down
n
Cycle by cycle edge-triggered shutdown logic
n
Matched propagation delay for both channels
n
Outputs in phase with inputs
Product Summary
VOFFSET
IO+/-
VOUT
ton/off (typ.)
Delay Matching(typ.)
400V max.
2A / 2A
10 - 20V
120 & 100 ns
5 ns
Description
The RIC7113E4 is a high voltage, high speed power
MOSFET and IGBT driver with independent high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL outputs. The output drivers
n
Hermetically Sealed
feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays are
n
Lightweight
matched to simplify use in high frequency applications.
The floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration
which operates up to 400 volts.
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board
mounted and still air conditions.
Absolute Maximum Ratings
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
dV
s
/dt
P
D
R
thJA
T
J
T
S
T
L
Parameter
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Allowable Offset Supply Voltage Transient (Figure 2)
Package Power Dissipation @ T
A
£
+25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Weight
Min.
-0.5
—
V
S
- 0.5
-0.5
-0.5
-0.5
V
CC
- 20
V
SS
- 0.5
—
—
—
-55
-55
—
Max.
V
S
+ 20
400
V
B
+ 0.5
20
V
CC
+ 0.5
V
SS
+ 20
V
CC
+ 0.5
V
DD
+ 0.5
50
1.6
125
125
150
300
Units
V
V/ns
W
°C/W
°C
g
0.42 (typical)
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1
5/3/2001
RIC7113E4
Pre-Irradiation
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. The VS and VSS offset ratings are tested
with all supplies biased at 15V differential.
Symbol
VB
VS
VHO
VCC
VLO
VDD
VSS
VIN
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Supply Voltage
Logic Supply Offset Voltage
Logic Input Voltage (HIN, LIN & SD)
Min.
VS + 10
-4
VS
10
0
VSS + 5
-5
VSS
Max.
VS + 20
400
VB
20
VCC
VSS + 20
5
VDD
Units
V
Dynamic Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, and VSS = COM unless otherwise specified. The dynamic electrical
characteristics are measured using the test circuit shown in Figure 3.
Tj = 25°C
Symbol
t
on
t
off
t
sd
t
r
t
f
MT
Parameter
Turn-On Propagation Delay
Turn-Off Propagation Delay
Shutdown Propagation Delay
Turn-On Rise Time
Turn-Off Fall Time
Delay Matching, HS & LS Turn-On/Off
Min.
—
—
—
—
—
—
Tj =
-55 to 125°C
Typ. Max. Min. Max. Units
120
100
110
25
17
5
150
125
140
35
25
20
—
—
—
—
—
—
260
220
235
50
40
—
Test Conditions
V
S
= 0V
V
S
= 400V
V
S
= 400V
CL = 1000pf
CL = 1000pf
|Hton-Lton| or|Htoff-Ltoff|
ns
Typical Connection
4
up to 500V
HO
V
DD
HIN
SD
LIN
V
SS
V
CC
V
DD
HIN
SD
LIN
V
SS
V
CC
COM
LO
V
B
V
S
TO
LOAD
2
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Pre-Irradiation
RIC7113E4
Static Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, unless otherwise specified. The VIN, VTH and IIN parameters are refer-
enced to VSS and are applicable to all three logic input pins: HIN, LIN and SD. The VO and IO parameters
are referenced to COM or VS and are applicable to the respective output pins: HO or LO.
Tj = 25°C
Symbol
V
IH
Parameter
Logic “1” Input Voltage
Min.
3.1
6.4
9.5
12.5
Typ.
—
—
—
—
1.8
3.8
6.0
8.3
1.2
0.1
50
230
340
30
40
1.0
9.7
9.4
9.6
9.4
—
—
Tj =
-55 to 125°C
Min.
Max. Units
3.3
6.8
10
13.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.7
3.6
5.7
7.9
1.5
0.1
250
500
600
60
70
10
—
—
—
—
—
A
—
V
µA
V
V
Test Conditions
VDD = 5V
VDD = 10V
VDD = 15V
VDD = 20V
VDD = 5V
VDD = 10V
VDD = 15V
VDD = 20V
V
IN
=V
IH,
I
O
= 0A
V
IN
=V
IH,
I
O
= 0A
V
B
= V
S
= 400V
V
IN
=0V or V
DD
V
IN
=0V
,
or V
DD
V
IN
=0V
,
or V
DD
V
IN
= V
DD
V
IN
= 0V
V
IL
Logic “0” Input Voltage
—
—
—
—
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
QDD
I
IN+
I
IN-
V
BSUV+
V
BSUV-
V
CCUV+
V
CCUV-
I
O+
I
O-
High Level Output Voltage, V
BIAS
- V
O
Low Level Output Voltage, V
O
Offset Supply Leakage Current
Quiescent V
BS
Supply Current
Quiescent V
CC
Supply Current
Quiescent V
DD
Supply Current
Logic “1” Input Bias Current
Logic “0” Input Bias Current
V
BS
Supply Undervoltage Positive
Going Threshold
V
BS
Supply Undervoltage Negative
Going Threshold
V
CC
Supply Undervoltage Positive
Going Threshold
V
CC
Supply Undervoltage Negative
Going Threshold
Output High Short Circuit Pulsed
Current
Output Low Short Circuit Pulsed
Current
—
—
—
—
—
—
—
—
7.5
7.0
7.4
7.0
2.0
2.0
V
O
= 0V, V
IN
= V
DD
PW < 10 µs
V
O
= 15V, V
IN
= 0V
PW < 10 µs
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3
RIC7113E4
Radiation Performance
Radiation characteristics
International Rectifier Radiation Hardened gate drivers are tested to verify their hardness capability. The
hardness assurance program at International rectifier uses a Cobalt-60 (
60
Co) source and heavy ion
irradiation.
Every wafer shall be tested per MIL-STD-883, Method 1019, test condition A “Ionizing Radiation
(Total Dose) Test Procedure”.
Both pre- and post- irradiation performances are tested and specified using the same drive circuitry and test
conditions to provide a direct comparison.
For Static Irradiation Test Conditions refer to figure 7.
Static Electrical Characteristics
Symbol
V
IH
Tj = 25°C
100K Rads (Si)
Parameter
Logic “1” Input Voltage
Units
Test Conditions
VDD = 5V
VDD = 10V
VDD = 15V
VDD = 20V
VDD = 5V
VDD = 10V
VDD = 15V
VDD = 20V
V
IN
=V
IH,
I
O
= 0A
V
IN
=V
IH,
I
O
= 0A
VB =VS = 400A
VIN =0V or VDD
VIN =0V or VDD
VIN =0V or VDD
VIN =VDD
VIN =0V
Min
3.1
6.4
9.5
12.5
—
—
—
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
QDD
I
IN+
I
IN-
V
BSUV+
V
BSUV-
V
CCUV+
V
CCUV-
I
O+
I
O-
High Level Output Voltage, V
BIAS
- V
O
Low Level Output Voltage, V
O
Offset Supply Leakage Current
Quiescent V
BS
Supply Current
Quiescent V
CC
Supply Current
Quiescent V
DD
Supply Current
Logic “1” Input Bias Current
Logic “0” Input Bias Current
V
BS
Supply Undervoltage Positive
Going Threshold
V
BS
Supply Undervoltage Negative
Going Threshold
V
CC
Supply Undervoltage Positive
Going Threshold
V
CC
Supply Undervoltage Negative
Going Threshold
Output High Short Circuit Pulsed
Current
Output Low Short Circuit Pulsed
Current
—
Max
—
—
—
—
1.8
3.8
6.0
8.3
1.2
0.1
50
230
340
30
40
1.0
9.7
9.4
9.9
9.6
V
µA
V
V
IL
Logic “0” Input Voltage
V
—
—
—
—
—
—
—
7.5
7.0
7.4
7.0
2.0
2.0
—
—
A
VO =0V, VIN =VDD
PW < 10 µs
VO =15V, VIN =0V
PW < 10 µs
4
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Radiation characteristics
RIC7113E4
International Rectifier radiation hardened Gate Drivers have been characterized in heavy ion environment
for Single Event Effects (SEE). Single Event Effects characterization data is illustrated below. For Static Bias
Test Conditions refer to figure 8.
Single Event Effect Safe Operating Area
Ion
Br
I
Au
I
Au
LET
MeV/(mg/cm
2
))
37
60
82
85
100
Energy
(MeV)
284
344
346
344
346
Angle
(degrees)
0
0
0
45
35
V
S
(V)
@V
BS
=-10V
400
325
250
400
400
@V
BS
=-15V
400
250
200
400
400
@V
BS
=-17.5V
400
200
175
350
350
Note: VCC/VDD = 20V, except for LET=100, then VCC/VDD = 17.5V
STATIC BIAS
450
400
350
300
250
200
150
100
50
0
-10
-15
VB (V)
-17.5
Br, 0° angle
I, 0° angle
Au, 0° angle
I, 45° angle
Au, 35° angle
VS (V)
Single Event Effect, Safe Operating Area
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