Silicon PIN Limiter Diodes
5
MA4L Series
V 5.0
Absolute Maximum Ratings
1
Features
•
Lower Insertion Loss and Noise Figure
•
Higher Peak and Average Operating Power
•
Various P1dB Compression Powers
•
Lower Flat Leakage Power
•
Reliable Silicon Nitride Passivation
@ TA = +25°C ( Unless otherwise specified )
Parameter
Forward Current
Operating Temperature
Storage Temperature
Junction Temperature
RF Peak Incident Power
RF C.W. Incident Power
Mounting Temperature
Notes:
1.
Exceeding these limits may cause permanent damage
.
Absolute Maximum
100 mA
-55°C to +125°C
-55°C to +150°C
+175°C
Per Performance Table
Per Performance Table
+320°C for 10 sec.
Description
M/A-COM produces a series of small and
medium I-region length silicon PIN diodes
specifically designed for high signal limiter
applications. Each of these devices provides
circuit designers with lower insertion loss at
zero bias, faster response and recovery times,
and lower flat leakage power. This series of
diode is available as passivated chips
(ODS 132 or ODS 134) as well as hermetic
surface mount and cylindrical ceramic
packages. Consult factory for specific package
style availability.
A Square
Anode
Applications
The MA4L Series of PIN limiter diodes are
designed for use in passive limiter control
circuits to protect sensitive receiver components
such as low noise amplifiers ( LNA ), detectors,
and mixers covering the 10MHz to 18GHz
frequency band.
.
007” +/- .001
(0.18 mm +/- .02)
ODS
134
132
Dimension
A
A
Mils
13 +/- 2.0
20 +/- 2.0
mm
0.33 +/- 0.05
0.51 +/- 0.05
Specification Subject to Change Without Notice
M/A-COM Inc.
þ
43 South Avenue, Burlington, MA 01803 USA
1
þ
Telephone: 781-564-3100
Silicon PIN Limiter Diodes
Notes for Specifications and Nominal High Signal Performance Table:
MA4L Series
V 5.0
1.
Maximum Series Resistance
- R
S,
is measured at 500MHz in the ODS-30 package and is equivalent
to the total diode resistance : Rs = Rj ( Junction Resistance) + Rc ( Ohmic Resistance)
2.
Nominal C.W. Thermal Resistance
-
θ
TH
is measured in ceramic pill package, ODS-30, mounted to
a metal ( infinite ) heatsink. Diode only thermal resistance values are approximately 2 ºC/W lower in
value than the ODS-30 listed package values.
3.
Maximum High Signal Performance
– Measured using a single shunt diode ( die ) attached
directly to the gold plated RF housing ground with 2 mil thick conductive silver epoxy in a 50Ω,
SMA, connectorized test fixture. Chip anode contact is thermo sonically wire bonded using a
1 mil dia. gold wire onto a 7.2 mil thick Rogers 5880 duroid microstrip trace. A shunt coil
provides the D.C. return. Test Frequency = 9.4 GHz, RF pulse width = 1.0 µS, 0.001 duty cycle.
4.
Maximum C.W Incident Power
- Measured in a 50
Ω,
SMA, connectorized housing @ 4GHz utilizing a
TWT amplifier and the same single diode assembly configuration as stated in Note 3 above.
Die Handling and Mounting Information
Handling:
All semiconductor chips should be handled with care in order to avoid damage or contamination
from perspiration, salts, and skin oils. For individual die, the use of plastic tipped tweezers or vacuum pick
up tools is strongly recommended. Bulk handling should ensure that abrasion and mechanical shock are
minimized.
Die Attach:
The die have Ti-Pt-Au back and anode metal, with a final gold thickness of 1.0 µm. Die can be
mounted with a gold-tin, eutectic solder preform or conductive silver epoxy. The metal RF and D.C. ground
plane mounting surface must be free of contamination and should have a surface flatness of < +/- 0.002“.
Eutectic Die Attachment Using Hot Gas Die Bounder:
An 80/20, gold-tin eutectic solder preform is
recommended with a work surface temperature of 255
o
C and a tool tip temperature of 220
o
C. When the hot
gas is applied, the temperature at the tool tip should be approximately 290
o
C. The chip should not be
exposed to temperatures greater than 320
o
C for more than 10 seconds.
Eutectic Die Attachment Using Reflow Oven:
See Application Note M541, “Bonding and Handling
Procedures for Chip Diode Devices” at
www.macom.com.
for recommended profile.
Epoxy Die Attachment:
A thin, controlled amount of electrically conductive silver epoxy should be applied
at approximately a 1–2 mils thickness to minimize ohmic and thermal resistances. A thin epoxy fillet should
be visible around the perimeter of the chip after placement to ensure full area coverage. Cure conductive
epoxy per manufacturer’s schedule.
Die Bonding:
The anode bond pads on these die have a Ti-Pt-Au metallization scheme, with a final gold
thickness of 1.0 µm. Thermosonic wedge wire bonding of 0.001” diameter gold wire is recommended with a
stage temperature of 150
o
C and a force of 18 to 40 grams. Ultrasonic energy should be adjusted to the
minimum required. Automatic ball bonding can also be used.
See Application Note M541, “Bonding and Handling Procedures for Chip Diode Devices”
for more detailed handling and assembly instructions at
www.macom.com.
Specification Subject to Change Without Notice
M/A-COM Inc.
þ
43 South Avenue, Burlington, MA 01803 USA
3
þ
Telephone: 781-564-3100
Silicon PIN Limiter Diodes
Application Circuits
MA4L Series
V 5.0
Typical +60dBm Peak Power, 1µS P.W., 0.001% Duty Cycle, +20dBm Flat Leakage Limiter Circuit
Transmission Line: 90º @ Fo
Transmission Line: 90º @ Fo
RF Input
RF Output
MA4L401-132
Coil: D.C. Return
MA4L101-134
MA4L032-134
Typical +50 dBm Peak Power, 1µS P.W., 0.001% Duty Cycle, +20 dBm Flat Leakage Limiter Circuit
Transmission Line: 90º @ Fo
RF Input
RF Output
MA4L032-134
Coil: D.C. Return
MA4L022-134
Specification Subject to Change Without Notice
M/A-COM Inc.
þ
43 South Avenue, Burlington, MA 01803 USA
5
þ
Telephone: 781-564-3100
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