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MRSS31U

产品描述Micro power Built-in IC ultra-minimum MR sensor
文件大小29KB,共3页
制造商NEC ( Renesas )
官网地址https://www2.renesas.cn/zh-cn/
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MRSS31U概述

Micro power Built-in IC ultra-minimum MR sensor

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DATA SHEET
MRSS31U
Micro power Built-in IC ultra-minimum MR sensor
FEATURES
*Micro power (15µW(typ):Vcc=3V)
and High-sensitivity(2mT(typ))
(suited for battery-operation)
*Ultra-small size
MR(Magneto-resistance)sensor
*
Volume and mounting area are 50%
smaller than MRSS22L.
*
Height is about 4mm lower than
MRSS22L.
*Operating in one way magnetic field
*Operating with independent pole
(easily manufacture)
*Superior Temperature stability
*Lead free goods
2.Fundamental Operation
2-1.Direction of Magnetic Field
2-2.Circuit Block
SWITCH
R1
R2
2.0
± 0.2
0.3
+0.1
-0.05
MR Sensor
1.Dimension (Unit:mm)
0.25
±0.1
0.15
+0.1
-0.05
Gnd
2 .1
±0.1
1 .6
0 ∼0.05
Vcc
Out
0.6 5
0.65
Ma x0.8
V½½
SAMPLING
LOGIC
LATCH
Op-Amp
MOS
Operation
OUT
R3
R4
GND
R1 ∼R4 :MR Elements
2-3.Performance Characteristics (25±3ºC)
Operating require
Condition
H = 0 mT(
Magnetic Flux Density)
[0 A/m (
Magnetic Field Strength
)]
H
2.0
(Typ)
mT(
Magnetic Flux Density)
[1.6kA/m (
Magnetic Field Strength)
]
H
0.5 mT (
Magnetic Flux Density
)
[0.4kA/m(
Magnetic Field Strength)
]
Output
Voltage
Hi-level
Lo-level
Hi-level
When power switch is ON
When magnetic field is applied
When magnetic field is applied
0.4
±0.1

 
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