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MRSS23E

产品描述Low voltage operating type Built-in IC ultra-minimum MR sensor
文件大小30KB,共3页
制造商NEC ( Renesas )
官网地址https://www2.renesas.cn/zh-cn/
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MRSS23E概述

Low voltage operating type Built-in IC ultra-minimum MR sensor

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DATA SHEET
MR Sensor
MRSS23E
Low voltage operating type Built-in IC ultra-minimum MR sensor
FEATURES
・Micro
power (6µW(typ):Vcc=1.8V)
and High-sensitivity(1.7mT(typ))
(suited for battery-operation)
・Operating
ambient temperature range
(-40ºC to + 85ºC)
2.8
±0.2
1.Dimension (Unit : mm)
0.4
+0.1
-0.05
0.16
+0.1
-0.06
+0.15
-0.1
0.6
Gnd
+0.2
-0.1
・Operating
in one way magnetic field
・Operating
with independent pole
(easily manufacture)
・Lead
free products
1.6
0∼0.1
Vcc
Out
0.95
0.95
0.8
±0.1
1.1
±0.1
2.9
±0.2
2.Fundamental Operation
2-1.Direction of Magnetic Field
R1
2-2.Circuit Block
V½½
R2
SAMPLING
LOGIC
LATCH
C-MOS
Operation
OUT
Op-A mp
R3
R4
SWITCH
R1∼R4 :MR Elements
GND
2-3.Performance Characteristics (25+3ºC)
Operating require
Condition
H = 0 mT (
Magnetic Flux Density)
[0 A/m (
Magnetic Field Strength)
]
H
≧1.7
(Typ)
mT (
Magnetic Flux Density)
[1.4kA/m (
Magnetic Field Strength) ]
H
0.5 mT (
Magnetic Flux Density)
[0.6kA/m (
Magnetic Field Strength)
]
Output
Voltage
Hi-level
Lo-level
Hi-level
When power switch is ON
When magnetic field is applied
When magnetic field is applied

 
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