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MIG15J503H

产品描述TOSHIBA INTELLIGENT POWER MODULE
产品类别其他集成电路(IC)    信号电路   
文件大小106KB,共11页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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MIG15J503H概述

TOSHIBA INTELLIGENT POWER MODULE

MIG15J503H规格参数

参数名称属性值
厂商名称Toshiba(东芝)
包装说明,
Reach Compliance Codeunknow
ECCN代码EAR99
模拟集成电路 - 其他类型AC MOTOR CONTROLLER
JESD-30 代码R-XDMA-T30
JESD-609代码e0
功能数量1
端子数量30
最高工作温度100 °C
最低工作温度-20 °C
最大输出电流30 A
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
认证状态Not Qualified
最大供电电压 (Vsup)17 V
最小供电电压 (Vsup)13.5 V
标称供电电压 (Vsup)15 V
表面贴装NO
温度等级OTHER
端子面层TIN LEAD
端子形式THROUGH-HOLE
端子位置DUAL

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MIG15J503H
TOSHIBA INTELLIGENT POWER MODULE
MIG15J503H
MIG15J503H is an intelligent power module for three-phase
inverter system. The 4th generation low saturation voltage trench
gate IGBT and FRD are connected to a three-phase full bridge
type, and IC by the original high-voltage SOI(silicon-on-insulator)
process drives these directly in response to a PWM signal.
Moreover, since high-voltage level-shifter is built in high-voltage
IC, while being able to perform a direct drive without the
interface with which the upper arm IGBT is insulated, the drive
power supply of an upper arm can be driven with a bootstrap
system, and the simplification of a system is possible.
Weight:18 g (Typ.)
Furthermore, each lower arm emitter terminal has been
independent so that detection can perform current detection at the time of vector control by current detection
resistance of a lower arm. The protection function builds in Under Voltage Protection, Short Circuit Protection, and
Over Temperature Protection. Original h
igh thermal conduction resin is adopted as a package, and low heat
resistance is realized.
Feature
The 4th generation trench gate thin wafer NPT IGBT is adopted.
FRD is built in.
The level shift circuit by high-voltage IC is built in.
The simplification of a high side driver power supply is possible by the bootstrap system.
Short Circuit Protection, Over Temperature Protection , and the Power Supply Under Voltage Protection
function are built in.
Short Circuit Protection and Over Temperature Protection state are outputted.
The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at
the time of vector control.
Low thermal resistance by adoption of original high thermal conduction resin.
Since this product is MOS structure, it should be careful of static electricity in the case of handling.
This tentative specification is a development examination stage, and may change the contents without
a preliminary announcement.
TOSHIBA CONFIDENTIAL
1
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