MJ13335
NPN SILICON TRANSISTORS
HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS
SOLENOID AND RELAY DRIVERS
TO-3
ABSOLUTE MAXIMUM RATINGS (T
a
=25℃)
℃
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current (DC)
Collector Dissipation (Tc=25
℃)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
I
C
P
C
T
j
Tstg
Rating
800
500
20
175
200
-50~150
Unit
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃
)
℃
Characteristic
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Symbol
I
CBO
I
CEO
h
FE
V
CE(sat)
VBE(sat)
Test Condition
V
CB
=
800V
, I
E
=0
V
CB
= 500V , I
B
=0
V
CE
= 5V , I
C
=5.0A
IC=10A , IB=2A
Ic=10A, IB=2A
Min
Typ
Max
250
250
Unit
µ
A
µ
A
10
60
1.8
1.8
V
Wing Shing Computer Components Co., (H.K.)Ltd.
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