LTO-DMS
MDD310-08V thru MDD310-22V
Diode/Diode Module
LTO-DMS Semiconductor Corporation
1468, 86th Street, Brooklyn,
New York, 11228, USA
Tel: (718) 234 6010 / (707) 3223 4679
Fax:(718) 234 6013 / (707) 3223 6696
3
2
V
RSM
V
900
1300
1500
1700
1900
2100
2300
V
RRM
V
800
1200
1400
1600
1800
2000
2200
Type
MDD310-08V
MDD310-12V
MDD310-14V
MDD310-16V
MDD310-18V
MDD310-20V
MDD310-22V
3
1
2
1
Symbol
I
FRM
I
FAVM
I
FSM
Test Conditions
T
VJ
=T
VJM
T
C
=100
T
VJ
=45
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=45
V
R
=0
T
VJ
=T
VJM
VR=0
180 sine
t=10
ms
t=8.3 ms
t=10
ms
t=8.3 ms
t=10
ms
t=8.3 ms
t=10
ms
t=8.3 ms
(50Hz),sine
(60Hz),sine
(50Hz),sine
(60Hz),sine
(50Hz),sine
(60Hz),sine
(50Hz),sine
(60Hz),sine
Maximum Ratings
480
310
11500
12200
9600
10200
662000
620000
460000
430000
-40
+150
150
-40
+150
3000
3600
2.5-5
12-15
320
A
A
A
A
A
A
A
2
S
A
2
S
A
2
S
A
2
S
Features
·Package
with screw terminals
·Isolation
Voltage 3600V-
·Planar
glasspassivated chips
·Low
forward voltage drop
Applications
·Heat and temperature control for
industrial fumaces and chemical
processes
·Lighting control
·Motor control
·Power converter
i
2
dt
T
VJ
T
VJM
Tstg
V
ISOL
Md
Weight
50/60Hz,RMS t=1min
I
ISOL
1mA t=1s
Mounting Torque
Terminal connection torque
Typ.
Advantages
V
V
Nm
Nm
g
·Easy to mount with two screws
·Space and weight savings
·Improved temperature and
power cycling
·High power density
(M5)
(M8)
Symbol
I
R
V
F
V
TO
r
T
Q
S
I
RM
R
thJC
R
thJK
d
s
d
A
a
Test Conditions
V
R
=V
RRM
T
VJ
=T
VJM
I
F
=600A
T
VJ
=25
For power-loss calculations only
T
VJ
=T
VJM
T
VJ
=125 ,I
F
=400A,-di/dt=50A/ s
per Diode;DC current
per module
per Diode;DC current
per module
Creeping distance on surface
Creeping distance in air
Max.allowable acceleration
Dimensions in mm (1 mm = 0.0394")
Characteristic Value
40
1.2
0.75
0.63
760
275
0.129
0.065
0.169
0.0845
12.7
9.6
50
mA
V
V
m
C
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
Revision:1
2002/06/17
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