RO-P-DS-3059 - -
50 mW Ka-Band Power Amplifier
31.5-36.0 GHz
Preliminary Information
MAAPGM0012-DIE
Features
♦
♦
♦
♦
♦
31.5-36.0 GHz GaAs MMIC Amplifier
50 mW Output Power Level
31.5 - 36.0 GHz Operation
Variable Drain Voltage (4-6V) Operation
Single Voltage Operation
Self-Aligned MSAG
®
MESFET Process
Primary Applications
♦
Radar Applications
♦
Satellite Communications
Description
The
MAAPGM0012-DIE
is a 3-stage, 50 mW, Ka-Band
power amplifier with on-chip bias networks. This product is
fully matched to 50 ohms on both the input and output. It
can be used as a power amplifier stage or as a driver stage
in high power applications.
Each device is 100% RF tested on wafer to ensure
performance compliance. The part is fabricated using M/
A-COM’s repeatable, high performance and highly reliable
GaAs Multifunction Self-Aligned Gate (MSAG
®
) MESFET
Process. This process provides polyimide scratch protec-
tion.
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50
Ω,
V
DD
= 5V, P
in
= 5 dBm
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Input VSWR
Output VSWR
Drain Current
1. T
B
= MMIC Base Temperature
Symbol
f
P
OUT
PAE
P1dB
G
VSWR
VSWR
I
DD
Typical
31.5-36.0
17
5
16
16
2.5:1
1.8:1
< 200
mA
Units
GHz
dBm
%
dBm
dB
RO-P-DS-3059 - -
2/6
50mW Ka-Band Power Amplifier
Maximum Operating Conditions
1
Parameter
Input Power
Drain Supply Voltage
Junction Temperature
Storage Temperature
Symbol
P
IN
V
DD
T
J
T
STG
Absolute Maximum
10
6.5
180
-55 to +150
MAAPGM0012-DIE
Units
dBm
V
°C
°C
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Drain Voltage
Input Power
Junction Temperature
MMIC Base Temperature
Symbol
V
D1,
V
D2
P
IN
T
J
T
B
Min
4.0
Typ
5.0
Max
6.0
7.0
150
Note 2
Unit
V
dBm
°C
°C
2. Maximum MMIC Base Temperature = 150°C — 61* V
dd
* I
D
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Ramp V
DD
to desired voltage, typically 5.0 V.
2. Set RF input.
3.
Power down sequence in reverse.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3059 - -
3/6
50mW Ka-Band Power Amplifier
25
23
21
19
17
15
13
11
9
7
5
31.0
31.5
32.0
32.5
33.0
33.5
34.0
34.5
35.0
MAAPGM0012-DIE
35.5
36.0
36.5
Frequency (GHz)
Figure 1. Output Power vs. Frequency at V
DD
= 5V And P
in
=5dBm.
25
23
21
19
17
15
13
11
9
7
5
4.0
4.5
5.0
5.5
6.0
Drain Voltage (V)
Figure 2. Output Power vs. Drain Voltage at f
o
= 34 GHz And P
in
= 5dBm.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3059 - -
4/6
50mW Ka-Band Power Amplifier
30
MAAPGM0012-DIE
25
20
15
10
5
VDD = 4
0
31.0
31.5
32.0
32.5
33.0
33.5
34.0
34.5
35.0
35.5
36.0
36.5
VDD = 5
VDD = 6
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
25
23
21
19
17
15
13
11
9
7
5
31.0
31.5
32.0
32.5
33.0
33.5
34.0
34.5
35.0
35.5
36.0
GAIN
Input VSWR
Output VSWR
6
5
4
3
2
1
36.5
Frequency (GHz)
Figure 4. Small Signal Gain and VSWR vs. Frequency at V
DD
= 5V.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3059 - -
5/6
50mW Ka-Band Power Amplifier
MAAPGM0012-DIE
Mechanical Information
Chip Size: 3.801 x 1.524 x 0.075 mm
1.574mm.
(150 x 60 x 3 mils)
3.667mm.
3.801mm.
3.278mm.
1.524mm.
GND:G
GND:G
1.373mm.
GND:G
VD1
GND:G
VD2
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
GND:G
0
0
Note: Chip edge to bond pad dimensions are shown to the center of the bond pad.
Figure 5. Die Layout
Bond Pad Dimensions
Pad
RF: IN, OUT
DC: VD1, VD2
Size (µm)
100 x 100
150 x 150
Size (mils)
4x4
6x6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
GND:G
GND:G
G DN G
:
G DN G
:
0.724mm.
IN
G D NG
:
G DN G
:
G DN G
:
GND:G
G DN G
:
G D NG
:
G D NG
:
G D NG
:
G D NG
:
G D NG
:
G DN G
:
GND:G
GND:G
OUT
0.724mm.
GND:G
GND:G
0.141mm.
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