Bulletin PD-20742 rev. C 02/06
80EBU04
Ultrafast Soft Recovery Diode
Features
• Ultrafast Recovery
• 175°C Operating Junction Temperature
• Screw Mounting Only
• Lead-Free Plating
Benefits
• Reduced RFI and EMI
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description/ Applications
These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited
for HF welding, power converters and other applications where switching losses are not significant portion of the total
losses.
t
rr
= 50ns (typ)
I
F(AV)
= 80Amp
V
R
= 400V
Absolute Maximum Ratings
Parameters
V
R
I
F(AV)
I
FSM
I
FRM
T
J
, T
STG
Cathode to Anode Voltage
Continuous Forward Current, T
C
= 101°C
Single Pulse Forward Current, T
C
= 25°C
Maximum Repetitive Forward Current
Operating Junction and Storage Temperatures
Max
400
80
800
160
- 55 to 175
Units
V
A
°C
Square Wave, 20kHz
Case Styles
PowIRtab
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80EBU04
Bulletin PD-20742 rev. C 02/06
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
, V
r
V
F
Breakdown Voltage,
Blocking Voltage
Forward Voltage
Min Typ Max Units Test Conditions
400
-
-
-
-
1.1
-
1.3
V
V
V
V
µA
mA
pF
nH
I
R
= 100µA
I
F
= 80A
I
F
= 80A, T
J
= 175°C
I
F
= 80A, T
J
= 125°C
V
R
= V
R
Rated
T
J
= 150°C, V
R
= V
R
Rated
V
R
= 200V
Measured lead to lead 5mm from package body
0.92 1.08
0.98 1.15
-
-
50
3.5
50
2
-
-
I
R
Reverse Leakage Current
-
-
C
T
L
S
Junction Capacitance
Series Inductance
-
-
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
50
87
151
9.3
17.2
405
-
60
-
-
-
-
-
1300
nC
-
A
ns
I
F
= 1A, di
F
/dt = 200A/µs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 80A
V
R
= 200V
di
F
/dt = 200A/µs
I
RRM
Peak Recovery Current
-
-
Q
rr
Reverse Recovery Charge
-
Thermal - Mechanical Characteristics
Parameters
R
thJC
R
thCS
Wt
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
Weight
0.18
T
Mounting Torque
1.2
10
Mounting Surface, Flat, Smooth and Greased
Min
Typ
0.2
Max
0.70
Units
K/W
5.02
g
(oz)
2.4
20
N*m
lbf.in
2
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80EBU04
Bulletin PD-20742 rev. C 02/06
1000
Reverse Current - I
R
(µA)
1000
T
J
= 175˚C
100
125˚C
10
1
0.1
0.01
25˚C
Instantaneous Forward Current - I
F
(A)
100
T = 175˚C
J
J
J
0.001
0
100
200
300
400
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
T = 125˚C
T = 25˚C
1000
10
Junction Capacitance - C
T
(pF)
T
J
= 25˚C
100
1
0
0.5
1
1.5
2
2.5
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
1
10
100
1000
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
1
Thermal Impedance Z
thJC
(°C/W)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
P
DM
0.1
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
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80EBU04
Bulletin PD-20742 rev. C 02/06
180
Allowable Case Temperature (°C)
Average Power Loss ( Watts )
140
RMS Limit
160
140
DC
120
100
80
60
40
20
0
0
20
40
60
80
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
120
100
Square wave (D = 0.50)
80% Rated Vr applied
80
see note (3)
60
0
20
40
60
80
100
120
Average Forward Current - I
F
(AV)
(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
100
120
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
250
Vr = 200V
Tj = 125˚C
Tj = 25˚C
4500
4000
3500
IF = 160A
IF = 80A
IF = 40A
Vr = 200V
Tj = 125˚C
Tj = 25˚C
200
3000
Qrr ( nC )
trr ( ns )
2500
2000
1500
IF = 160A
IF = 80A
IF = 40A
150
100
1000
500
50
100
di
F
/dt (A/µs )
1000
0
100
di
F
/dt (A/µs )
1000
Fig. 7 - Typical Reverse Recovery time vs. di
F
/dt
Fig. 8 - Typical Stored Charge vs. di
F
/dt
(3)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
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80EBU04
Bulletin PD-20742 rev. C 02/06
Reverse Recovery Circuit
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
di
F
/dt
dif/dt
ADJUST
D
G
IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
I
F
0
t
rr
t
a
t
b
4
Q
rr
2
I
RRM
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
1
/dt
di
f
F
/dt
1. di
F
/dt - Rate of change of current through zero
crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from zero
crossing point of negative going I
F
to point where
a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
x I
RRM
Q
rr
=
2
5. di
(rec) M
/ dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
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