MP04TT600
MP04TT600
Dual Thyristor Water Cooled Module
Preliminary Information
DS5466-1.1 June 2001
FEATURES
s
s
s
s
s
s
Dual Device Module
Electrically Isolated Package
Pressure Contact Construction
International Standard Footprint
Alumina (Non Toxic) Isolation Medium
Integral Water Cooled Heatsink
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM(per arm)
I
T(RMS)
V
isol
1800V
580A
14000A
912A
3000V
5 (G1)
4 (K1)
3
(A)
1
(AK)
2
(A)
APPLICATIONS
s
s
s
s
6 (G2)
7 (K2)
Motor Control
Controlled Rectifier Bridges
Heater Control
AC Phase Control
Fig. 1 TT Circuit diagram
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
1800
1700
1600
1500
Conditions
MP04TT600-18
MP04TT600-17
MP04TT600-16
MP04TT600-15
T
vj
= 0˚ to 125˚C,
I
DRM
= I
RRM
= 50mA
V
DSM
= V
RSM
=
V
DRM
= V
RRM
+ 100V
respectively
Module outline type code:
MP04-W3
Module outline type code:
MP04-W3A
Lower voltage grades available
ORDERING INFORMATION
Order As:
MP04TT600-XX-W2
MP04TT600-XX-W3
MP04TT600-XX-W3A
1/4 - 18 NPT connection
1/4 - 18 NPT connection
1/4 - 18 NPT water connection
thread
XX shown in the part number about represents V
DRM
/100
selection required, eg. MP04TT600-27-W2
Note: When ordering, please use the complete part number.
Module outline type code:
MP04-W2
(See Package Details for further information)
Fig. 2 Module package variants - (not to scale)
1/8
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MP04TT600
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
I
T(AV)
Parameter
Mean on-state current
Test Conditions
Half wave resistive load,
4.5 Ltr/min
I
T(RMS
RMS value
T
water (in)
= 25˚C @ 4.5 Ltr/min
T
water (in)
= 40˚C @ 4.5 Ltr/min
I
TSM
I
2
t
I
TSM
I
2
t
V
isol
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Isolation voltage
10ms half sine, T
j
= 125˚C
V
R
= 0
10ms half sine, T
j
= 125˚C
V
R
= 50% V
DRM
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
T
water (in)
= 25˚C
T
water (in)
= 40˚C
Max.
650
580
1020
912
14
0.975x10
6
11.2
0.625x10
6
3000
Units
A
A
A
A
kA
A
2
s
kA
A
2
s
V
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-w)
Parameter
Thermal resistance - junction to water
(per thyristor)
Test Conditions
dc, 4.5 Ltr/min
Half wave, 4.5 Ltr/min
3 Phase, 4.5 Ltr/min
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M10
-
Weight (nominal)
-
Reverse (blocking)
-
Min.
-
-
-
-
–40
6(53)
-
-
Max.
0.102
0.106
0.112
125
125
-
Units
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
Nm (lb.ins)
12(106) Nm (lb.ins)
Refer to
drawings
g
2/10
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MP04TT600
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
j
= 125˚C
To 67% V
DRM
, T
j
= 125˚C
From 67% V
DRM
to 500A, gate source 10V, 5Ω
t
r
= 0.5µs, T
j
= 125˚C
V
T(TO)
r
T
Threshold voltage
On-state slope resistance
At T
vj
= 125˚C
At T
vj
= 125˚C
-
-
0.85
0.38
V
mΩ
Min.
-
-
-
Max.
50
1000
500
Units
mA
V/µs
A/µs
Note:
The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Max.
3.5
200
0.25
30
0.25
5
10
150
10
Units
V
mA
V
V
V
V
A
W
W
3/8
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MP04TT600
2500
25
Measured under pulse
conditions
1
2
Peak half sine wave on-state current - (kA)
1: T
j
= 125˚C Min
2: T
j
= 125˚C Max
I
2
t = Î
2
x t
2
20
Instantaneous on-state current I
T
- (A)
2000
700
15
I
2t
value - (A
2
s x 10
3
)
1500
1000
10
I
2
t
5
600
500
500
0
0.5
1.0
1.5
2.0
Instantaneous on-state voltage V
T
- (V)
2.5
0
1
ms
10
1
2 3 45
10
400
20 30 50
Cycles at 50Hz
Duration
Fig. 3 Maximum (limit) on-state characteristics
Fig. 4 Surge (non-repetitive) on-state current vs time
(with 50% V
RSM
at T
case
= 125˚C)
0.12
Thermal resistance, Junction to water, R
th(j-w)
- (°C/W)
100
Pulse width Frequency Hz Table gives pulse power P
GM
in Watts
µs
50 100 400
100
150 150 150
200
150 150 125
500
150 150 100
1ms
150 100 25
10ms
20 - -
10
50
0W
20
W
10
W
5W
W
0.1
Gate trigger voltage, V
GT
- (V)
10
0.08
U
pp
im
er l
it 9
9%
0.06
1
T
j
= 25˚C
T
j
= -40˚C
0.04
Region of certain
triggering
V
GD
L
0.1
0.001
rl
owe
99
imit
%
T
j
= 125˚C
0.02
0.01
0.1
1
10
I
FGM
0
0.001
0.01
0.1
Gate trigger current, I
GT
- (A)
1
10
Time (Seconds)
100
1000
Fig. 5 Gate characteristics
Fig. 6 Transient thermal impedance - dc
4/10
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MP04TT600
2200
Conduction Angle
30°
2000
60°
90°
120°
1800
180°
1600
1400
1200
1000
800
600
400
200
0
0
200
400
600
800
1000
1200
Sine wave current (Average, per arm)
Power dissipation - (Watts, per arm)
Power dissipation - (Watts, per arm)
Conduction Angle
30°
2000
60°
90°
120°
1800
180°
DC
1600
1400
1200
1000
800
600
400
200
0
0
2200
200
400
600
800 1000 1200 1400
Square wave current - (Average, per arm)
1600
Fig. 7 On-state power loss per arm vs on-state current at
specified conduction angles, sine wave 50/60Hz
100
Fig. 8 On-state power loss per arm vs on-state current at
specified conduction angles, square wave 50/60Hz
100
Maximum permissible water inlet temperature - (°C)
Maximum permissble inlet water temperature - (°C)
90
80
70
60
50
40
30
20 Conduction Angle
30°
60°
10
90°
120°
180°
0
0
100
200
300
400
500
600
Sine wave current (Average, per arm)
90
80
70
60
50
40
30
700
Conductin Angle
30°
60°
90°
10
120°
180°
DC
0
0
100 200 300
20
400
500
600
700
800
900
Square wave current (Average, per arm)
Fig. 9 Maximum permissible water inlet temperature vs
on-state current at specified conduction angles,
sine wave 50/60Hz
Fig. 10 Maximum permissible water inlet temperature vs
on-state current at specified conduction angles,
square wave 50/60Hz
5/8
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