KM44C1000D, KM44V1000D
CMOS DRAM
1M x 4Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 1,048,576 x 4bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and
package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and
Hidden refresh capabilities. Furthermore, self-refresh operation is available in 3.3V Low power version.
This 1Mx4 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high per-
formance microprocessor systems.
FEATURES
• Part Identification
- KM44C1000D/D-L(5V, 1K Ref.)
- KM44V1000D/D-L(3.3V, 1K Ref.)
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (3.3V, L-ver only)
• Fast parallel test mode capability
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early write or output enable controlled write
•
Active Power Dissipation
Unit : mW
Speed
-5
-6
-7
3.3V
-
220
200
5V
470
415
360
• JEDEC Standard pinout
• Available in 26(20)-pin SOJ 300mil and TSOP(II)
300mil packages
• Single +5V±10% power supply(5V product)
• Single +3.3V±0.3V power supply(3.3V product)
FUNCTIONAL BLOCK DIAGRAM
•
Refresh Cycles
Part
NO.
KM44C1000D
KM44V1000D
Refresh
cycle
1K
Refresh Period
Normal
16ms
L-ver
128ms
Refresh Timer
Refresh Control
Row Decoder
Sense Amps & I/O
Data in
Buffer
RAS
CAS
W
Control
Clocks
VBB Generator
Vcc
Vss
•
Performance Range
Speed
-5
-6
-7
Refresh Counter
t
RAC
50ns
60ns
70ns
t
CAC
15ns
15ns
20ns
t
RC
90ns
110n
130n
t
PC
35ns
40ns
45ns
Remark
5V only
5V/3.3V
5V/3.3V
A0~A9
Col. Address Buffer
Row Address Buffer
Memory Array
1,048,576 x4
Cells
DQ0
to
DQ3
Data out
Buffer
Column Decoder
OE
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
KM44C1000D, KM44V1000D
CMOS DRAM
PIN CONFIGURATION
(Top Views)
•KM44C/V1000DJ
•KM44C/V1000DT
DQ0
DQ1
W
RAS
A9
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
SS
DQ3
DQ2
CAS
OE
A8
A7
A6
A5
A4
DQ0
DQ1
W
RAS
A9
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
SS
DQ3
DQ2
CAS
OE
A8
A7
A6
A5
A4
( SOJ )
( TSOP-II )
Pin Name
A0 - A9
DQ0 - 3
V
SS
RAS
CAS
W
OE
V
CC
Pin function
Address Inputs
Data In/out
Ground
Row Address Strobe
Column Address Strobe
Read/Write Input
Data Output Enable
Power(+5V)
Power(+3.3V)
KM44C1000D, KM44V1000D
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
3.3V
V
IN,
V
OUT
V
CC
Tstg
P
D
I
OS
-0.5 to +4.6
-0.5 to +4.6
-55 to +150
600
50
Rating
5V
CMOS DRAM
Units
-1 to +7.0
-1 to +7.0
-55 to +150
600
50
V
V
°C
mW
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
Min
V
CC
V
SS
V
IH
V
IL
3.0
0
2.0
-0.3
*2
3.3V
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
*1
0.8
Min
4.5
0
2.4
-0.1
*2
5V
Typ
5.0
0
-
-
Max
5.5
0
V
CC
+1.0
*1
0.8
V
V
V
V
Units
*1 : V
CC
+1.3V/15ns(3.3V), V
CC
+2.0V/20ns(5V), Pulse width is measured at V
CC
*2 : - 1.3V/15ns(3.3V), - 2.0V/20ns(5V), Pulse width is measured at V
SS
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Parameter
Input Leakage Current (Any input 0≤V
IN
≤V
CC
+0.3V,
all other input pins not under test=0 Volt)
3.3V
Output Leakage Current
(Data out is disabled, 0V≤V
OUT
≤V
CC
)
Output High Voltage Level(I
OH
=-2mA)
Output Low Voltage Level(I
OL
=2mA)
Input Leakage Current (Any input 0≤V
IN
≤V
CC
+0.5V,
all other input pins not under test=0 Volt)
5V
Output Leakage Current
(Data out is disabled, 0V≤V
OUT
≤V
CC
)
Output High Voltage Level(I
OH
=-5mA)
Output Low Voltage Level(I
OL
=4.2mA)
Symbol
I
I(L)
I
O(L)
V
OH
V
OL
I
I(L)
I
O(L)
V
OH
V
OL
Min
-5
-5
2.4
-
-5
-5
2.4
-
Max
5
5
-
0.4
5
5
-
0.4
Units
uA
uA
V
V
uA
uA
V
V
KM44C1000D, KM44V1000D
Max
KM44V1000D
I
CC1
I
CC2
I
CC3
Don′t Care
Don′t Care
Don′t Care
-5
-6
-7
Don′t Care
-5
-6
-7
-5
-6
-7
Don′t Care
-5
-6
-7
Don′t Care
Don′t Care
-
60
55
1
-
60
55
-
45
40
0.5
100
-
60
55
200
150
CMOS DRAM
DC AND OPERATING CHARACTERISTICS
(Recommend operating conditions unless otherwise noted.)
Symbol
Power
Speed
Units
KM44C1000D
85
75
65
2
85
75
65
65
55
45
1
200
85
75
65
300
-
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
uA
uA
I
CC4
Don′t Care
Normal
L
Don′t Care
L
L
I
CC5
I
CC6
I
CC7
I
CCS
I
CC1
* : Operating Current (RAS and CAS cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, CAS, Address cycling @
t
PC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
t
RC
=min)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, CAS=0.2V,
DQ=Don′t Care, T
RC
=125us(L-ver.), T
RAS
=T
RAS
min~300ns
I
CCS
: Self refresh current
RAS=CAS=V
IL
, W=OE =A0 ~ A9=V
CC-
0.2V or 0.2V
DQ0 ~ DQ3=V
CC-
0.2V, 0.2V or OPEN
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
I
CC6
and I
CC7,
address can be changed maximum once while RAS=V
IL
. In
I
CC4
, address can be changed maximum once within one fast page mode cycle time,
t
PC
.
KM44C1000D, KM44V1000D
CAPACITANCE
(T
A
=25°C, V
CC
=5V or 3.3V, f=1MHz)
Parameter
Input capacitance [A0 ~ A9]
Input capacitance [RAS, CAS, W, OE]
Output capacitance [DQ0 - DQ3]
Symbol
C
IN1
C
IN2
C
DQ
Min
-
-
-
CMOS DRAM
Max
5
7
7
Units
pF
pF
pF
AC CHARACTERISTICS
(0°C≤T≤70°C, See note 1,2)
Test condition (5V device) : V
CC
=5.0V±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : V
CC
=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Note) *1 : 5V only
Symbol
Min
-5
*1
Max
Min
110
152
50
15
25
0
0
3
30
50
15
50
15
20
15
5
0
10
0
10
25
0
0
0
10
10
15
13
10K
35
25
10K
12
50
0
0
3
40
60
15
60
15
20
15
5
0
10
0
10
30
0
0
0
10
10
15
15
10K
45
30
10K
12
50
60
15
30
0
0
3
50
70
20
70
20
20
15
5
0
10
0
15
35
0
0
0
15
15
15
15
10K
50
35
10K
17
50
-6
Max
Min
130
177
70
20
35
7
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8
4
10
3,4,10
3,4,5
3,10
3
6
2
Units
Notes
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
OFF
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
90
132
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