Datasheet> 器件分类 > 存储> 存储> IDT71V124HSA10PHSAGI

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IDT71V124HSA10PHSAGI: 产品描述Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, ROHS COMPLIANT, TSOP2-32; 产品类别存储存储; 文件大小76KB，共8页; 制造商IDT (Integrated Device Technology); 标准

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IDT71V124HSA10PHSAGI概述

Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, ROHS COMPLIANT, TSOP2-32

IDT71V124HSA10PHSAGI规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	TSOP2
包装说明	ROHS COMPLIANT, TSOP2-32
针数	32
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.B
最长访问时间	10 ns
其他特性	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY
JESD-30 代码	R-PDSO-G32
JESD-609代码	e3
长度	20.95 mm
内存密度	1048576 bit
内存集成电路类型	STANDARD SRAM
内存宽度	8
功能数量	1
端子数量	32
字数	131072 words
字数代码	128000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	128KX8
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
认证状态	Not Qualified
座面最大高度	1.2 mm
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3.15 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	MATTE TIN
端子形式	GULL WING
端子节距	1.27 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	30
宽度	10.16 mm
Base Number Matches	1

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3.3V CMOS Static RAM

1 Meg (128K x 8-Bit)

Center Power &

Ground Pinout

◆

IDT71V124SA/HSA

Features

128K x 8 advanced high-speed CMOS static RAM

JEDEC revolutionary pinout (center power/GND) for

reduced noise

Equal access and cycle times

– Commercial: 10/12/15/20ns

– Industrial: 10/12/15/20ns

One Chip Select plus one Output Enable pin

Inputs and outputs are LVTTL-compatible

Single 3.3V supply

Low power consumption via chip deselect

Available in a 32-pin 300- and 400-mil Plastic SOJ, and

32-pin Type II TSOP packages.

Description

The IDT71V124 is a 1,048,576-bit high-speed static RAM organized

as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability

CMOS technology. This state-of-the-art technology, combined with inno-

vative circuit design techniques, provides a cost-effective solution for high-

speed memory needs. The JEDEC center power/GND pinout reduces

noise generation and improves system performance.

The IDT71V124 has an output enable pin which operates as fast as

5ns, with address access times as fast as 9ns available. All bidirec-

tional inputs and outputs of the IDT71V124 are LVTTL-compatible and

operation is from a single 3.3V supply. Fully static asynchronous

circuitry is used; no clocks or refreshes are required for operation.

◆

Functional Block Diagram

•

ADDRESS

DECODER

•

1,048,576-BIT

MEMORY ARRAY

I/O

- I/O

I/O CONTROL

CONTROL

LOGIC

3873 drw 01

FEBRUARY 2007

DSC-3873/09

IDT71V124HSA10PHSAGI相似产品对比

	IDT71V124HSA10PHSAGI	71V124HSA10PH	IDT71V124HSA10PHSAG	IDT71V124HSA15PHSAGI	IDT71V124HSA20PHSAGI	IDT71V124HSA15PHSAG	71V124HSA12PH	IDT71V124HSA12PHSAG	IDT71V124HSA20PHSAG	IDT71V124HSA12PHSAGI
描述	Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, ROHS COMPLIANT, TSOP2-32	Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, TSOP2-32	Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, ROHS COMPLIANT, TSOP2-32	Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, ROHS COMPLIANT, TSOP2-32	Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, ROHS COMPLIANT, TSOP2-32	Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, ROHS COMPLIANT, TSOP2-32	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, TSOP2-32	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, ROHS COMPLIANT, TSOP2-32	Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, ROHS COMPLIANT, TSOP2-32	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, ROHS COMPLIANT, TSOP2-32
是否无铅	不含铅	含铅	不含铅	不含铅	不含铅	不含铅	含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	不符合	符合	符合	符合	符合	不符合	符合	符合	符合
零件包装代码	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
包装说明	ROHS COMPLIANT, TSOP2-32	TSOP2, TSOP32,.46	ROHS COMPLIANT, TSOP2-32	ROHS COMPLIANT, TSOP2-32	ROHS COMPLIANT, TSOP2-32	ROHS COMPLIANT, TSOP2-32	TSOP2-32	ROHS COMPLIANT, TSOP2-32	ROHS COMPLIANT, TSOP2-32	ROHS COMPLIANT, TSOP2-32
针数	32	32	32	32	32	32	32	32	32	32
Reach Compliance Code	compliant	_compli	compliant	compliant	compliant	compliant	not_compliant	compliant	compliant	compliant
ECCN代码	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B
最长访问时间	10 ns	10 ns	10 ns	15 ns	20 ns	15 ns	12 ns	12 ns	20 ns	12 ns
其他特性	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY
JESD-30 代码	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32
长度	20.95 mm	20.95 mm	20.95 mm	20.95 mm	20.95 mm	20.95 mm	20.95 mm	20.95 mm	20.95 mm	20.95 mm
内存密度	1048576 bit	1048576 bi	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	32	32	32	32	32	32	32	32	32	32
字数	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000	128000	128000	128000	128000	128000	128000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	70 °C	85 °C	85 °C	70 °C	85 °C	70 °C	70 °C	85 °C
最低工作温度	-40 °C	-40 °C	-	-40 °C	-40 °C	-	-40 °C	-	-	-40 °C
组织	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	225	260	260	260	260	225	260	260	260
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	30	NOT SPECIFIED	30	30	30	30	NOT SPECIFIED	30	30	30
宽度	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
JESD-609代码	e3	-	e3	e3	e3	e3	-	e3	e3	e3
端子面层	MATTE TIN	-	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	-	MATTE TIN	MATTE TIN	MATTE TIN

IDT71V124HSA10PHSAGI

IDT71V124HSA10PHSAGI概述

IDT71V124HSA10PHSAGI规格参数

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