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GS8342D36BGD-333I

产品描述QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
产品类别存储    存储   
文件大小492KB,共34页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
标准
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GS8342D36BGD-333I概述

QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

GS8342D36BGD-333I规格参数

参数名称属性值
是否Rohs认证符合
厂商名称GSI Technology
零件包装代码BGA
包装说明LBGA, BGA165,11X15,40
针数165
Reach Compliance Codecompliant
ECCN代码3A991.B.2.B
Factory Lead Time10 weeks
最长访问时间0.45 ns
其他特性PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)333 MHz
I/O 类型SEPARATE
JESD-30 代码R-PBGA-B165
长度15 mm
内存密度37748736 bit
内存集成电路类型QDR SRAM
内存宽度36
功能数量1
端子数量165
字数1048576 words
字数代码1000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织1MX36
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装等效代码BGA165,11X15,40
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源1.5/1.8,1.8 V
认证状态Not Qualified
座面最大高度1.4 mm
最大待机电流0.215 A
最小待机电流1.7 V
最大压摆率0.785 mA
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度13 mm
Base Number Matches1

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GS8342D08/09/18/36BD-400/350/333/300/250
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 4 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with present 144 Mb devices
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
36Mb SigmaQuad-II
TM
Burst of 4 SRAM
Clocking and Addressing Schemes
400 MHz–250 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
The GS8342D08/09/18/36BD SigmaQuad-II SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and
C clock inputs. C and C are also independent single-ended
clock inputs, not differential inputs. If the C clocks are tied
high, the K clocks are routed internally to fire the output
registers instead.
Each internal read and write operation in a SigmaQuad-II B4
RAM is four times wider than the device I/O bus. An input
data bus de-multiplexer is used to accumulate incoming data
before it is simultaneously written to the memory array. An
output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore the address
field of a SigmaQuad-II B4 RAM is always two address pins
less than the advertised index depth (e.g., the 4M x 8 has a 1M
addressable index).
SigmaQuad™ Family Overview
The GS8342D08/09/18/36BD are built in compliance with the
SigmaQuad-II SRAM pinout standard for Separate I/O
synchronous SRAMs. They are 37,748,736-bit (36Mb)
SRAMs. The GS8342D08/09/18/36BDSigmaQuad SRAMs
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
- 400
tKHKH
tKHQV
2.5 ns
0.45 ns
-350
2.86 ns
0.45 ns
- 333
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
Rev: 1.02 6/2012
1/34
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

 
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