GS9014
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (NPN)
TO-226AA (TO-92)
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
Features
•
NPN Silicon Epitaxial Planar Transistors
•
Complementary to GS9015
•
Low noise pre-amplifier
•
High h
FE
Mechanical Data
Case:
TO-92 Plastic Package
Weight:
approx. 0.18g
Packaging Codes/Options:
E6/Bulk-5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
max.
∅
0.022 (0.55)
0.098 (2.5)
Bottom
View
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation at T
amb
= 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
R
θJA
T
j
T
S
Ratings at 25°C ambient temperature unless otherwise specified
Value
50
45
5
100
450
(1)
250
(1)
150
–55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
Document Number 88197
16-May-02
www.vishay.com
1
GS9014
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Parameter
Current Gain Group A
B
C
D
J
= 25°C unless otherwise noted)
Symbol
Test Condition
Min
60
100
200
400
45
50
5
—
—
—
—
0.58
—
150
—
Typ
—
—
—
—
—
—
—
—
—
0.14
0.84
0.63
2.2
270
0.9
Max
150
300
600
1000
—
—
—
50
50
0.3
1.0
0.70
3.5
—
10
Unit
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 1mA
—
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
Output Capacitance
Gain-Bandwidth Product
Noise Figure
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
C
OB
ƒ
T
NF
I
C
= 1mA, I
B
= 0
I
C
= 100µA, I
E
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 100mA, I
B
= 5mA
I
C
= 100mA, I
B
= 5mA
V
CE
= 5V, I
C
= 2mA
V
CB
= 10V, I
E
= 0,
ƒ = 1 MHz
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 0.2mA,
ƒ = 1KHz, Rs = 2KΩ
V
V
V
nA
nA
V
V
V
pF
MHz
dB
www.vishay.com
2
Document Number 88197
16-May-02
微控制器 MCU
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