HL6323MG
AlGaInP Laser Diode
ADE-208-1410 (Z)
1st Edition
Mar. 2001
Description
The HL6323MG is a 0.63
µm
band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure.
It is suitable as a longer distance operating range for laser markers and a higher speed for positioning
control sensors. The HL6323MG is packaged in the small can (φ5.6 mm), enabling end products to be kept
small.
Application
•
Laser markers
•
Measurement equipment
Features
•
•
•
•
High output power
Visible light output
Small package
TM mode oscillation
: 35 mW (CW)
:
λp
= 639 nm Typ
:
φ5.6
mm
Pakage Type
•
HL6323MG: MG
Internal Circuit
1
3
PD
LD
2
HL6323MG
Absolute Maximum Ratings
(T
C
= 25°C
±
3°C)
Item
Optical output power
Optical output power (Puise)
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
P
O
P
O
V
R(LD)
V
R(PD)
Topr
Tstg
Value
35 *
1
50 *
2
2
30
−10
to +50
−40
to +85
Unit
mW
mW
V
V
°C
°C
Notes: 1. This value is not the same as the specification for long term reliability, such as lifetime.
2. Pulse condition : Pulse width pw = 100 ns , duty = 20%
Optical and Electrical Characteristics
(T
C
= 25°C
±
3°C)
Item
Optical output power
Optical output power (Puise)
Threshold current
Slope efficiency
Operating current
Operating voltage
Beam divergence parallel to
the junction
Beam divergence
parpendicular to the junction
Lasing wavelength
Monitor current
Symbol
P
O
P
O
Ith
ηs
I
OP
V
OP
θ//
θ⊥
λp
I
S
Min
35
50
30
0.4
7
26
635
0.05
Typ
45
0.6
95
2.3
8.5
30
639
0.15
Max
65
0.9
130
2.8
11
34
642
0.25
Unit
mW
mW
mA
mW/mA
mA
V
deg.
deg.
nm
mA
18(mW) / (I
(24mW)
– I
(6mW)
)
P
O
= 30 mW
P
O
= 30 mW
P
O
= 30 mW
P
O
= 30 mW
P
O
= 30 mW
P
O
= 30 mW, V
R(PD)
= 5 V
Test Condition
Kink free *
Kink free *
Note: Kink free is confirmed at the temperature of 25°C.
2
HL6323MG
Typical Characteristic Curves
Opticai Output Power vs. Forward Current
50
Optical output power, P
O
(mW)
Monitor current, I
S
(mA)
Monitor Current vs. Optical Output Power
0.25
V
R(PD)
= 5V
T
C
= 25°C
0.20
0.15
40
30
T
C
= 0°C
T
C
= 25°C
20
T
C
= 50°C
10
0
0.10
0.05
0
0
40
120
160
80
Forward current, I
F
(mA)
200
0
40
50
30
20
10
Optical output power, P
O
(mW)
Threshold Current vs. Case Temperature
100
Slope efficiency,
ηs
(mW/mA)
10
0
10
40
20
30
Case temperature, T
C
(°C)
50
Threshold current, Ith (mA)
Slope Efficiency vs. Case Temperature
1.0
0.8
0.6
0.4
0.2
0
0
40
10
30
20
Case temperature, T
C
(°C)
50
3
HL6323MG
Monitor Current vs. Case Temperature
0.25
Lasing wavelength,
λp
(nm)
P
O
= 30mW
V
R(PD)
= 5V
Monitor current, I
S
(mA)
0.20
Lasing Wavelength vs. Case Temperature
646
P
O
= 30mW
644
642
640
638
636
634
632
630
0
20
30
40
10
Case temperature, T
C
(°C)
50
0.15
0.10
0.05
0
0
30
40
20
10
Case temperature, T
C
(°C)
50
Lasing Spectrum
T
C
= 25°C
P
O
= 30mW
Relative intensity
Polarization ratio
Polarization Ratio vs. Optical Output Power
250
200
T
C
= 25°C
NA = 0.4
150
P
O
= 20mW
100
P
O
= 10mW
P
O
= 5mW
630
640
Wavelength,
λp
(nm)
650
50
0
0
10
20
30
40
50
Optical output power, P
O
(mW)
4
HL6323MG
Astigmatism vs. Optical Output Power
10
Far Field Pattern
Relative intensity
P
O
= 30mW
0.8 T
C
= 25°C
0.6
0.4
0.2
Parallel
30
40
0
0
10
20
30
40
50
Perpendicular
Astigmatism, A
S
(µm)
1.0
8
T
C
= 25°C
NA = 0.4
6
4
0
−40 −30 −20 −10
0 10 20
Angle,
θ
(deg.)
2
Optical output power, P
O
(mW)
Frequency Response
3dB/div P
O
= 3mW
T
C
= 25°C
Survival rate (%)
Electrostatic Destruction (MIL standard)
100
80
60
40
20
0
Forward
N = 5 pcs
∆I
OP
≤
10%
Gain (dB)
1M
10M
100M
1G 3G
0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency (Hz)
Applied voltage (kV)
5
嵌入式系统
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