1N5615GP thru 1N5623GP
Vishay General Semiconductor
Glass Passivated Junction Fast Switching Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
t
rr
I
R
V
F
T
j
max.
1.0 A
200 V to 1000 V
50 A
150 ns, 250 ns, 300 ns, 500 ns
0.5 µA
1.2 V
175 °C
®
ted*
aten
P
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly
by Patent No. 3,930,306
DO-204AC (DO-15)
Features
• Superectifier structure for High Reliability
condition
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer, automotive and Telecommunication
Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 55 °C
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load
Operating junction and storage
temperature range
Symbols
V
RRM
V
RM
S
V
DC
I
F(AV)
I
FSM
T
J
,T
STG
1N5615GP
200
140
200
1N5617GP
400
280
400
1N5619GP
600
420
600
1.0
50
- 65 to + 175
1N5621GP
800
560
800
1N5623GP
1000
700
1000
Units
V
V
A
A
A
°C
Document Number 88522
19-Sep-05
www.vishay.com
1
1N5615GP thru 1N5623GP
Vishay General Semiconductor
Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum
instantaneous
forward voltage
Maximum DC
reverse current at
rated DC blocking
voltage
Maximum reverse
recovery time
Typical junction
capacitance
at 1.0 A
Test condition
Symbols 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP Units
V
F
1.2
V
T
A
= 25 °C
T
A
= 100 °C
I
R
0.5
25
µA
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
t
rr
C
J
150
250
25
300
500
ns
pF
Thermal Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Typical thermal resistance
(1)
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
Symbols 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP Units
R
θJA
45
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
1.0
60
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
Resistive or
Inductive Load
0.75
50
T
A
= 55 °C
8.3
ms Single Half Sine-Wave
40
0.5
30
20
10
0.25
0.375" (9.5mm) Lead Length
0
25
50
75
100
125
150
175
0
1
10
100
Ambient Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88522
19-Sep-05
1N5615GP thru 1N5623GP
Vishay General Semiconductor
10
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
Instantaneous Forward Current (A)
1
Junction Capacitance (pF)
1.6
10
0.1
T
J
= 25 °C
Pulse
Width
= 300
µs
1% Duty Cycle
0.01
0.4
1
0.6
0.8
1.0
1.2
1.4
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
20
100
Instantaneous Reverse Current (µA)
T
J
= 125 °C
1
Typical Thermal Impedance ( °CW)
10
10
T
J
= 75 °C
0.1
1
T
J
= 25 °C
0.01
0
20
40
60
80
100
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t, Pulse Duration (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
Document Number 88522
19-Sep-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
NXP MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
