Target data sheet
BTS 4881 R
Smart Power High-Side-Switch
Eight Channels: 8 x 200 mΩ
Ω
Features
Output current 0,625 A per channel
Short circuit protection
Maximum current internally limited
Overload protection
Input protection
Overvoltage protection (including load dump)
Undervoltage shutdown with auto-
restart and hysteresis
Switching inductive loads
Thermal shutdown with restart
Thermal independence of separate channels
ESD - Protection
Loss of GND and loss of
V
bb
protection
Very low standby current
Reverse battery protection
Programmable input for CMOS or V
bb
/2
Common diagnostic output
for overtemperature
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
V
bb(AZ)
V
bb(on)
R
ON
47
200
V
m
tbd...45 V
P-DSO-36-12; -10
Application
•
All types of resistive, inductive and capacitive loads
•
µC compatible power switch for 12 V and 24 V DC applications
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS or
V
bb
/2
compatible input and common diagnostic feedback, monolithically integrated in
Smart SIPMOS technology. Fully protected by embedded protection functions.
Page 1
2001-02-26
Target data sheet
BTS 4881 R
Block Diagram
D IA G
V
bb
LS
U ndervoltage
shutdow n
w ith restart
Input
Level S hifter
C om m on
D iagnostic
V oltage
source
O vervoltage
protection
Logic
each
channel
Logic
each
channel
Logic
each
channel
C urrent
lim it
G ate
protection
Tem perature
sensor
O U T1
C harge pum p
Level shifter
Logic
each channel
Lim it for
unclam ped
ind. loads
R ectifier
OUT2
ESD
Logic
OUT3
IN 1
R
IN
IN 2
OUT4
IN 3
C hannel 2...7
IN 4
IN 5
IN 6
IN 7
C urrent
lim it
G ate
protection
T em perature
sensor
OUT8
OUT6
OUT5
O U T7
C harge pum p
Level shifter
R ectifier
IN 8
ESD
R
IN
GND
Lim it for
unclam ped
ind. loads
Logic
m iniPR O FE T
S ignal G N D
Page 2
2001-02-26
Target data sheet
BTS 4881 R
Pin
1,2,4,5
3
6
7
8
9
10
11
12
13
14-18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
TAB
Symbol
NC
LS
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
NC
GND
DIAG
OUT8
OUT8
OUT7
OUT7
OUT6
OUT6
OUT5
OUT5
OUT4
OUT4
OUT3
OUT3
OUT2
OUT2
OUT1
OUT1
Vbb
Function
not connected
Enable pin for switching the input-levels to V
bb
/2
Input, activates channel 1 in case of logic high signal
Input, activates channel 2 in case of logic high signal
Input, activates channel 3 in case of logic high signal
Input, activates channel 4 in case of logic high signal
Input, activates channel 5 in case of logic high signal
Input, activates channel 6 in case of logic high signal
Input, activates channel 7 in case of logic high signal
Input, activates channel 8 in case of logic high signal
not connected
Logic ground
Common diagnostic output for overtemperature
High-side output of channel 8
High-side output of channel 8
High-side output of channel 7
High-side output of channel 7
High-side output of channel 6
High-side output of channel 6
High-side output of channel 5
High-side output of channel 5
High-side output of channel 4
High-side output of channel 4
High-side output of channel 3
High-side output of channel 3
High-side output of channel 2
High-side output of channel 2
High-side output of channel 1
High-side output of channel 1
Positive power supply voltage
Page 3
2001-02-26
Target data sheet
Maximum Ratings
Parameter
at
T
j
= 25 °C, unless otherwise specified
Supply voltage
Supply voltage for full short circuit protection
Continuous input voltage
2)
Continuous voltage at LS-pin
Load current (Short - circuit current, see page 6)
Current through input pin (DC), each channel
Reverse current through GND-pin
1)
Operating temperature
Storage temperature
Power dissipation
3)
Inductive load switch-off energy dissipation
3)4)
single pulse,
T
j
= 125 °C,
I
L
= 0.625 A
each channel
all channels simultaneously active
Load dump protection
4)
V
LoadDump5)
=
V
A
+
V
S
V
IN
= low or high
t
d
= 350 ms,
R
I
= 2
,
R
L
= 47
V
Loaddump
90
117
V
ESD
10
1
V
bb
V
bb(SC)
V
IN
V
LS
I
L
I
IN
-I
GND
T
j
T
stg
P
tot
E
AS
-1
1)
...45
tbd
-10...V
bb
-1...V
bb
Symbol
Value
BTS 4881 R
Unit
V
self limited
5
1.6
internal limited
-55 ... +150
3.3
A
mA
A
°C
W
J
Electrostatic discharge
voltage
(Human Body Model)
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
all other pins
1defined by
P
tot
2At
V
> Vbb, the input current is not allowed to exceed ±5 mA.
IN
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
4not tested, specified by design
5
V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than
V
bb(AZ) require an external current limit for the GND pin, e.g. with a
150
resistor in GND connection. A resistor for the protection of the input is integrated.
Page 4
Input pin, LS pin, Common diagnostic pin
t
d
= 400 ms,
R
I
= 2
,
R
L
= 27
,
V
A
= 13.5 V
,
V
A
= 27 V
V
kV
1
5
2001-02-26
Target data sheet
Electrical Characteristics
Parameter
at
T
j
= -40...150°C,
V
bb
=9...40V, unless otherwise specified
Thermal Characteristics
Thermal resistance junction - case
Thermal resistance @ min. footprint
Thermal resistance @ 6 cm
2
cooling area
1)
Load Switching Capabilities and Characteristics
T
j
= 25 °C,
I
L
= 0.5 A
T
j
= 150 °C
Turn-on time
V
IN
= 0 to 10 V
Turn-off time
V
IN
= 10 to 0 V
Slew rate on
Slew rate off
10 to 30% V
OUT
,
70 to 40% V
OUT
,
dV/dt
on
-dV/dt
off
-
-
1
1
to 10%
V
OUT
t
off
-
75
to 90%
V
OUT
t
on
-
-
-
150
tbd
50
R
thJC
R
th(JA)
R
th(JA)
-
-
-
-
-
-
Symbol
min.
Values
typ.
BTS 4881 R
Unit
max.
1.5
50
38
K/W
200
400
tbd
tbd
tbd
tbd
µs
V/µs
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 5
2001-02-26
On-state resistance
R
ON
m
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