HCTS245T
Data Sheet
July 1999
File Number
4619.1
Radiation Hardened Octal Bus
Transceiver, Three-State, Non-Inverting
Intersil’s Satellite Applications
(SAF) devices are fully
tested and guaranteed to 100kRAD total dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
The Intersil HCTS245T is a Radiation Hardened Non-
Inverting Octal Bidirectional Bus Transceiver, Three-State,
intended for two-way asynchronous communication between
data busses. The HCTS245T allows data transmission from
the A bus to the B bus or from the B bus to the A bus. The
logic level at the direction input (DIR) determines the data
direction. The output enable input (OE) puts the I/O port in
the high-impedance state when high.
Flow
TM
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose (γ) 1 x 10
5
RAD(Si)
- Latch-Up Free Under Any Conditions
- SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
- Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-Day (Typ)
• 3 Micron Radiation Hardened CMOS SOS
• Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- V
IL
= 0.8V Max
- V
IH
= V
CC/2
Min
• Input Current Levels Ii
≤
5mA at V
OL
, V
OH
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HCTS245T are
contained in SMD 5962-95745.
A “hot-link” is provided from
our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
Pinouts
HCTS245DTR (SBDIP), CDIP2-T20
TOP VIEW
DIR
A0
A1
A2
A3
A4
1
2
3
4
5
6
7
8
9
20 V
CC
19 OE
18 B0
17 B1
16 B2
15 B3
14 B4
13 B5
12 B6
11 B7
Ordering Information
ORDERING
NUMBER
5962R9574501TRC
5962R9574501TXC
PART
NUMBER
HCTS245DTR
HCTS245KTR
TEMP.
RANGE
(
o
C)
-55 to 125
-55 to 125
A5
A6
A7
GND 10
HCTS245KTR (FLATPACK), CDFP4-F20
TOP VIEW
DIR
A0
A1
A2
A3
A4
A5
A6
A7
GND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
CC
OE
B0
B1
B2
B3
B4
B5
B6
B7
NOTE:
Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
HCTS245T
Die Characteristics
DIE DIMENSIONS:
(3149µm x 2794µm x 533µm
±51µm)
124 x 110 x 21mils
±2mil
METALLIZATION:
Type: Al Si
Thickness: 11.0k
Å
±1k
Å
SUBSTRATE POTENTIAL:
Unbiased Silicon on Sapphire
BACKSIDE FINISH:
Sapphire
PASSIVATION:
Type: Silox (S
i
O
2
)
Thickness: 13k
Å
±2.6k
Å
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
274
PROCESS:
CMOS SOS
Metallization Mask Layout
HCTS245T
(20) V
CC
(19) OE
(1) DIR
NC
NC
NC
A0 (2)
NC
(18) B0
A1 (3)
(17) B1
A2 (4)
(16) B2
A3 (5)
(15) B3
A4 (6)
(14) B4
A5 (7)
(13) B5
B7 (11)
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask
series for the HCTS245 is TA14417A.
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
3
GND (10)
B6 (12)
A6 (8)
A7 (9)
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