TVS Diodes
Surface Mount – 400W > SMF4L Series
SMF4L Series
Description
RoHS
Pb
e3
The SMF4L series of SOD-123FL small and flat lead low-
profile plastic package is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
• 400W peak pulsepower
capability at 10/1000µs
waveform, repetition rate
(duty cycle): 0.01%
• Compatible with industrial
standard package SOD-
123FL
• Low profile: maximum
height of 1mm.
• Low inductance, excellent
clamping capability
• For surface mounted
applications to optimize
board space
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
30kV(Air), 30kV (Contact)
• ESD protection of data
lines in accordance with
IEC 61000-4-2
• EFT protection of data
lines in accordance with
IEC 61000-4-4
• Fast response time:
typically less than 1.0ns
from 0 Volts to V
BR
min
• High temperature
soldering: 260°C/40
seconds at terminals
• Glass passivated junction
• Built-in strain relief
• Plastic package is
flammability rated V-0 per
Underwriters Laboratories
• Meet MSL level1, per
J-STD-020, LF maximun
peak of 260
°
C
• Matte tin lead–free plated
• Halogen-free and RoHS
compliant
• Pb-free E3 means 2
nd
level
interconnect is Pb-free
and the terminal finish
material is tin(Sn) (IPC/
JEDEC J-STD-609A.01)
• Recognized to UL 497B as
an Isolated Loop Circuit
Protector
Agency Approvals
Agency
Agency File Number
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at T
A
=25ºC by
10/1000µs (Note 1) 8/20us (Note2)
Power Dissipation On Infinite Heat Sink at
T
L
=50ºC
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Lead
Operating and Storage Temperature Range
Symbol
P
PPM
P
D
R
ƟJL
R
ƟJA
T
J,
T
STG
Value
400
1
220
100
-55 to 150
Unit
W
W
°C/W
°C/W
°C
Notes:
1. Non-repetitive current pulse, per Fig. 4 and derated above TJ (initial) =25ºC per Fig. 3.
2. SMF4L5.0A~SMF4L8.5A Peak Pulse Power Dissipation is 1850W min, 2000W typical @8/20us
3. SMF4L5.0A~SMF4L8.5A Peak Pulse Power Dissipation is 370W min, 400W typical @
10/1000μs, SMF4L90A~SMF4L250A Peak Pulse Power Dissipation is 200W typical @ 10/1000μs
Functional Diagram
Applications
SMF4L devices are ideal for the protection of I/O
interfaces, V
CC
bus and other vulnerable circuit used in
cellular phones, portable devices, business machines,
power supplies and other consumer applications.
Bi-directional
Cathode
Uni-directional
Anode
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/27/19
TVS Diodes
Surface Mount – 400W > SMF4L Series
Electrical Characteristics
(T =25°C unless otherwise noted)
A
Part
Number
Uni-Directional
Bi-Directional
Marking
Code
Uni-Directional
Bi-Directional
Breakdown Voltage
V
BR
(Volts) @ I
T
Min
Max
Test
Current
I
T
(mA)
Reverse
Stand off
Voltage V
R
(V)
Maximum
Maximum
Peak
Reverse
Pulse
Leakage @
V
R
I
R
(µA) Current I
pp
(A)
Maximum
Clamping
Voltage
@I
pp
V
C
(V)
Agency
Approval
SMF4L5.0A
SMF4L6.0A
SMF4L6.5A
SMF4L7
.0A
SMF4L7
.5A
SMF4L8.0A
SMF4L8.5A
SMF4L9.0A
SMF4L10A
SMF4L11A
SMF4L12A
SMF4L13A
SMF4L14A
SMF4L15A
SMF4L16A
SMF4L17A
SMF4L18A
SMF4L20A
SMF4L22A
SMF4L24A
SMF4L26A
SMF4L28A
SMF4L30A
SMF4L33A
SMF4L36A
SMF4L40A
SMF4L43A
SMF4L45A
SMF4L48A
SMF4L51A
SMF4L54A
SMF4L58A
SMF4L60A
SMF4L64A
SMF4L70A
SMF4L75A
SMF4L78A
SMF4L85A
SMF4L90A
SMF4L100A
SMF4L110A
SMF4L120A
SMF4L130A
SMF4L150A
SMF4L160A
SMF4L170A
SMF4L180A
SMF4L188A
SMF4L200A
SMF4L220A
SMF4L250A
-
-
-
-
-
-
-
SMF4L9.0CA
SMF4L10CA
SMF4L11CA
SMF4L12CA
SMF4L13CA
SMF4L14CA
SMF4L15CA
SMF4L16CA
SMF4L17CA
SMF4L18CA
SMF4L20CA
SMF4L22CA
SMF4L24CA
SMF4L26CA
SMF4L28CA
SMF4L30CA
SMF4L33CA
SMF4L36CA
SMF4L40CA
SMF4L43CA
SMF4L45CA
SMF4L48CA
SMF4L51CA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
KE
KG
KK
KM
KP
KR
KT
KV
KX
KZ
LE
LG
LK
LM
LP
LR
LT
LV
LX
LZ
ME
MG
MK
MM
MP
MR
MT
MV
MX
MZ
NE
NG
NK
NM
NP
NR
NT
NV
NX
NZ
OE
OG
OK
OM
OP
OR
OT
OV
OX
OZ
PE
-
-
-
-
-
-
-
AV
AX
AZ
BE
BG
BK
BM
BP
BR
BT
BV
BX
BZ
CE
CG
CK
CM
CP
CR
CT
CV
CX
CZ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6.4
6.67
7
.22
7
.78
8.33
8.89
9.44
10
11.1
12.2
13.3
14.4
15.6
16.7
17
.8
18.9
20
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40
44.4
47
.8
50
53.3
56.7
60
64.4
66.7
71.1
77
.8
83.3
86.7
94.4
100
111
122
133
144
167
178
189
201
209
224
246
279
7
7
.37
7
.98
8.6
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17
.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86
92.1
95.8
104
111
123
135
147
159
185
197
209
222
231
247
272
309
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
5
6
6.5
7
7
.5
8
8.5
9
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
180
188
200
220
250
800
800
500
200
100
50
20
10
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
40.1
35.9
33.1
30.9
28.7
27
.2
25.7
26.4
23.5
22
20.1
18.6
17
.2
16.4
15.4
14.5
13.7
12.3
11.3
10.3
9.5
8.8
8.3
7
.5
6.9
6.2
5.8
5.5
5.2
4.9
4.6
4.3
4.1
3.9
3.5
3.3
3.2
2.9
1.4
1.2
1.1
1.0
1.0
0.8
0.8
0.7
0.7
0.7
0.6
0.6
0.5
9.2
10.3
11.2
12
12.9
13.6
14.4
15.4
17
18.2
19.9
21.5
23.2
24.4
26
27
.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77
.4
82.4
87
.1
93.6
96.8
103
113
121
126
137
146
162
177
193
209
243
259
275
292
304
324
356
405
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
-
-
-
-
-
Notes:
1. V
BR
measured after I
T
applied for 300µs, I
T
= square wave pulse or equivalent.
2. Surge current waveform per 10/1000µs exponential wave and derated per Fig.3.
3. All terms and symbols are consistent with ANSI/IEEE C62.35.
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/27/19
TVS Diodes
Surface Mount – 400W > SMF4L Series
I-V Curve Characteristics
Uni-directional
Bi-directional
I
pp
Vc V
BR
V
R
I
R
V
F
I
T
V
Vc V
BR
V
R
I
T
I
R
I
R
I
T
V
R
V
BR
Vc
V
I
pp
I
pp
P
PPM
V
R
V
BR
V
C
I
R
V
F
Peak Pulse Power Dissipation
-- Max power dissipation
Stand-off Voltage
-- Maximum voltage that can be applied to the TVS without operation
Breakdown Voltage
-- Maximum voltage that flows though the TVS at a specified test current (IT)
Clamping Voltage
-- Peak voltage measured across the TVS at a specified Ippm (peak impulse current)
Reverse Leakage Current
-- Current measured at VR
Forward Voltage Drop for Uni-directional
Ratings and Characteristic Curves
(T =25°C unless otherwise noted)
A
Figure 1 - TVS Transients Clamping Waveform
Voltage Transients
Figure 2 - Peak Pulse Power Rating Curve
10
Voltage Across TVS
Voltage or Current
P
PPM
-Peak Pulse Power (kW)
Current Through TVS
1
0.2x0.2" (5.0x5.0mm)
0.1
0.000001
Time
Copper Pad Area
0.00001
0.0001
0.001
t
d
-Pulse Width (sec.)
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/27/19
TVS Diodes
Surface Mount – 400W > SMF4L Series
Ratings and Characteristic Curves
(T =25°C unless otherwise noted)
(Continued)
A
Figure 3 - Peak Pulse Power Derating Curve
100
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage %
80
60
40
20
0
Figure 4 - Pulse Waveform - 10/1000
µ
S
150
I
PPM
- Peak Pulse Current, % I
RSM
tr=10µsec
Peak Value
IPPM
TJ=25°C
Pulse Width(td) is defined
as the point where the peak
current decays to 50% of IPPM
100
Half Value
IPPM
IPPM
2
( )
10/1000µsec. Waveform
as defined by R.E.A
50
0
25
50
75
100
125 150
T
J
- Initial Junction Temperature (ºC)
175
0
td
0
1.0
2.0
t-Time (ms)
3.0
4.0
Figure 5 - Forward Voltage
V
f
- Typical forward dropped voltage@10mA
0.9
0.8
Figure 6 - Typical Junction Capacitance
10000
1000
Uni-Directional V=0V
Bi-Directional V=0V
0.7
Cj(pF)
0.6
0.5
100
Uni & Bi-Directional V=VR
0.4
0
-55
10
10
75
140
1
Temperature (ºC)
1
10
100
1000
VBR-Reverse Breakdown Voltage (V)
Figure 7 - Peak Forward Voltage Drop vs. Peak Forward
Current
Figure 8 - Maximum Non-Repetitive Forward Surge
Current Uni-Directional Only
35
I F - Peak Forward Current(A)
10
IFSM - Peak Forward Surve Current(A)
0
0.5
1
1.5
2
2.5
3
3.5
4
30
25
20
15
10
5
0
1
10
Number of Cycles at 60 Hz
100
1
0.1
0.01
V F - Peak Forward Voltage(V)
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/27/19
TVS Diodes
Surface Mount – 400W > SMF4L Series
Soldering Parameters
Reflow Condition
- Temperature Min (T
s(min)
)
Pre Heat
- Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
Average ramp up rate (Liquidus Temp (T
L
) to peak
T
S(max)
to T
L
- Ramp-up Rate
Reflow
- Temperature (T
L
) (Liquidus)
- Time (min to max) (t
L
)
Lead–free assembly
150°C
200°C
60 – 120 secs
Temperature (T)
T
P
Ramp-up
t
p
Critical Zone
T
L
to T
P
3°C/second max
3°C/second max
217°C
60 – 150 seconds
260
+0/-5
°C
30 seconds Max
6°C/second max
8 minutes Max.
260°C
T
L
T
s(max)
t
L
T
s(min)
Ramp-down
Preheat
t
s
Peak Temperature (T
P
)
Time within 5°C of actual peak Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
25˚C
t 25˚C to Peak
Time (t)
Environmental Specifications
High Temp. Storage
HTRB
JESD22-A103
JESD22-A108
JESD22-A104
JEDEC-J-STD-020, Level 1
JESD22-A101
JESD22-A111
Physical Specifications
Case
Polarity
Terminal
SOD-123FL plastic over glass passivated junction
Color band denotes cathode except bipolar
Matte tin-plated leads, solderable per
JESD22-B102
Temperature Cycling
MSL
H3TRB
RSH
Dimensions
-
SOD-123FL Package
Dimensions
A
B
C
E
A
B
Millimeters
Min
2.90
3.50
0.85
1.70
0.43
0.10
0.00
0.90
Max
3.10
3.90
1.05
2.00
0.83
0.25
0.10
0.98
Min
0.114
0.138
0.033
0.067
0.017
0.004
0.000
0.035
Inches
Max
0.122
0.154
0.041
0.079
0.033
0.010
0.004
0.039
E
D
E
F
G
C
D
F
Mounting Pad Layout
2.24 (0.088)
0.98 (0.039)
G
H
H
1.25 (0.049)
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/27/19
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