Schottky Barrier Packaged
and Beam Lead Tees
Features
q
q
q
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MA4E20, MA4E970 Series
V3.00
Case Styles
Small Physical Size for Microstrip Mounting
High Reliability
Closely Matched Junctions for High Isolation
Three Diode Barrier Heights are Available
Minimum Parasitics for Broadband Designs
Description
Each Schottky barrier beam lead Tee consists of two close-
ly matched diodes connected in the classic Tee configura-
tion. The diodes are formed monolithically to assure close
matching of electrical characteristics such as capacitance,
forward voltage and series resistance. The silicon that
originally connected the diodes on the wafer is removed.
The beam lead construction assures minimum parasitic
capacitance, connecting lead inductance and permits the
interconnection of the diodes into Tees at the wafer level.
Three barrier levels are available allowing different levels
of local oscillator drive power. The L series features a low
barrier for applications which have low available local
oscillator power. Both medium barrier (M series) and high
barrier (H series) devices are available for applications
with higher drive levels. The RF and local oscillator fre-
quencies can range up to 18 GHz with selection of an
appropriate junction capacitance. Each series is available
in three case styles which are compatible with microstrip
or stripline assembly techniques. The 270 case style is her-
metically sealed and is suggested for harsh environments
or for military or high reliability circuits. The 272 case style
is a low cost plastic enclosure similar in case style. The
beam lead case styles 271 and 1012 are designed for max-
imum bandwidth. The case style 271 is a forward tee and
the 1012 is a reverse tee. The case style 1000 is the small-
est stripline package and has the lowest parasitic capaci-
tance and inductance.
271
1012
Absolute Maximum Ratings at 25°C
Parameter
Operating and Storage
Temperature Range
-65°C to +150°C
(Case Style 270, 271 and 1012)
-65°C to +125°C
(Case Styles 272, 1000)
Maximum Power Dissipation
(derate linearly to zero
allowable dissipation at 150°C)
Absolute Maximum
75 mW/junction
235°C for 10 sec. (Case Style 270)
150°C for 5 sec.
(Case Styles 271, 272)
Soldering Temperature
Beam Strength
2g (Case Style 271, 1012)
Case Styles
(See appendix for complete dimensions.)
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
1
Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
Schottky Barrier Packaged and Beam Lead Tees
Electrical Specifications at 25°C
Schottky Tees
Maximum
1
Maximum
Junction
Junction Capacitance Maximum
3
Capacitance Difference Resistance
Cj
∆Cj
R
S
(pF)
(pF)
(Ohms)
1
MA4E20, MA4E970 Series
V3.00
Model
Number
MA4E201L
MA4E204L
MA4E207L
MA4E201M
MA4E204M
MA4E207M
MA4E201H
MA4E204H
MA4E207H
5,7
Barrier
Height
Low
Low
Low
Medium
Medium
Medium
High
High
High
Suggested
Frequency
(Hz)
S
C-X
Ku
S
C-X
Ku
S
C-X
Ku
Nominal
Forward
Voltage
V
F
(Volts)
0.25
0.27
0.30
0.35
0.37
0.40
0.55
0.57
0.60
2
Maximum
2
Forward
Voltage
Match
V
F
(Volts)
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
Nominal
Noise
Figure
NF
(dB)
6.0
6.5
7.5
6.0
6.5
7.5
6.0
6.5
7.5
Minimum
4
Reverse
Voltage
V
R
2
2
2
3
3
3
5
5
5
0.50
0.35
0.20
0.50
0.35
0.20
0.50
0.35
0.20
0.10
0.10
0.05
0.10
0.10
0.05
0.10
0.10
0.05
7
10
12
7
10
12
7
10
12
Schottky Reverse Tees
Maximum
1
Maximum
1
Junction
Junction Capacitance Maximum
3
Capacitance Difference Resistance
C
j
∆C
j
R
S
(pF)
(pF)
(Ohms)
0.50
0.35
0.20
0.50
0.35
0.20
0.50
0.35
0.20
0.10
0.10
0.05
0.10
0.10
0.05
0.10
0.10
0.05
7
10
12
7
10
12
7
10
12
Nominal
2
Forward
Voltage
V
F
(Volts)
0.25
0.27
0.30
0.25
0.27
0.30
0.25
0.27
0.30
Maximum
2
Forward
Voltage
Match
V
F
(Volts)
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
0.015
Nominal
Noise
Figure
NF
(dB)
6.0
6.5
7.5
6.0
6.5
7.5
6.0
6.5
7.5
Model
6,7
Number
MA4E974L
MA4E975L
MA4E976L
MA4E974M
MA4E975M
MA4E976M
MA4E974H
MA4E975H
MA4E976H
Barrier
Height
Low
Low
Low
Medium
Medium
Medium
High
High
High
Frequency
(H
Z
)
S
C-X
Ku
S
C-X
Ku
S
C-X
Ku
Minimum
4
Reverse
Voltage
V
R
2
2
2
3
3
3
4
4
4
Notes:
1. C
j
and
∆C
j
are measured at V
R
= 0 volts and f = 1.0 MHz.
2. V
F
is measured at I
F
= 1.0 mA.
3. Series resistance, R
S
, is determined by subtracting the junction
resistance, R
j
, from the measured value of 10 mA dynamic (slope)
resistance, R
T
:
R
S
= R
T
- R
j
Ohms
Junction resistance is computed from the following equation:
R
j
- 26/l
F
Ohms
I
F
= 10 mA
I
F
is the forward bias current in mA.
4. Reverse voltage is measured at I
R
= 10 µA.
5. The standard case styles for the forward tee series is 271, and the
Schottky beam lead tees are 270, 271, 272 and 1000.
6. The standard case style for the reverse tee series of diodes is case
style 1012. Tees are available in case styles 270, 272 and 1000.
7. To order parts specify the package as a suffix, i.e., MA4E201L-270 is a
low barrier tee in case style 270.
Specifications Subject to Change Without Notice.
2
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
M/A-COM, Inc.
Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
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