NS
ESIG
WD
R NE r
t
o
D FO
ter a
NDE 40ARH rt Cen /tsc
MME
po
m
-18
ECO See HS ical Sup tersil.co
R
.in
NOT
chn
r Te or www
t ou
Multiplexer
September 1997
ontac TERSIL
c
8-IN
1-88
®
HS-1840RH/883S
Rad-Hard 16 Channel CMOS Analog
with High-Z Analog Input Protection
Pinouts
HS1-1840RH/883S 28 PIN CERAMIC SIDEBRAZE DIP
CASE OUTLINE D-10,COMPLIANT TO MIL-M-38510 PACKAGE
TOP VIEW
+VS 1
NC 2
NC 3
IN 16 4
IN 15 5
IN 14 6
IN 13 7
IN 12 8
IN 11 9
IN 10 10
IN 9 11
GND 12
(+5VS) VREF 13
ADDR A3 14
28 OUT
27 -VS
26 IN 8
25 IN 7
24 IN 6
23 IN 5
22 IN 4
21 IN 3
20 IN 2
19 IN 1
18 ENABLE
17 ADDR A0
16 ADDR A1
15 ADDR A2
Features
• This Circuit is Processed in Accordance to
Mil-Std-883 and is Fully Conformant Under the
Provisions of Paragraph 1.2.1.
• Radiation Environment
- Gamma Rate (γ) 1 x 10
8
RAD(Si)/s
- Gamma Dose (γ) 2 x 10
5
RAD(Si)
• Low Power Consumption
• Fast Access Time 1000ns
• High Analog Input Impedance 500MΩ
During Power Loss (Open)
• Dielectrically Isolated Device Islands
• Excellent In Hi-Rel Redundant Systems
• Break-Before-Make Switching
• No Latch-Up
Description
The HS-1840RH/883S is a radiation hardened,
monolithic 16 channel multiplexer constructed with the
Intersil Linear Dielectric Isolation CMOS process. It is
designed to provide a high input impedance to the
analog source if device power fails (open) or the
analog signal voltage inadvertently exceeds the supply
rails during powered operation. Excellent for use in
redundant applications, since the secondary device
can be operated in a standby unpowered mode
affording no additional power drain. More significantly,
a very high impedance exists between the active and
inactive devices preventing any interaction. One of
sixteen channel selection is controlled by a 4-bit binary
address plus an Enable-Inhibit input which conve-
niently controls the ON/OFF operation of several
multiplexers in a system. All digital inputs have
electrostatic discharge protection.
The HS-1840RH/883S has been specifically designed
to meet exposure to radiation environments. It is
available in a 28 pin Ceramic Sidebraze dual-in-line
package and 28 pin Ceramic Flatpack. It is guaranteed
operational from -55
o
C to +125
o
C.
HS9-1840RH/883S 28 PIN CERAMIC SIDEBRAZE FLATPACK
CASE OUTLINE F-11A, COMPLIANT TO MIL-M-38510 PACKAGE
TOP VIEW
+VS
NC
NC
IN 16
IN 15
IN 14
IN 13
IN 12
IN 11
IN 10
IN 9
GND
(+5VS) VREF
ADDR A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OUT
-VS
IN 8
IN 7
IN 6
IN 5
IN 4
IN 3
IN 2
IN 1
ENABLE
ADDR A0
ADDR A1
ADDR A2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
1
File Number
3022.1
HS-1840RH/883S
Functional Diagram
IN 1
A0
1
P
A1
DIGITAL
ADDRESS
A2
OUT
A3
EN
16
P
IN 16
ADDRESS INPUT
BUFFER AND
LEVEL SHIFTER
DECODERS
MULTIPLEX
SWITCHES
Truth Table
A3
X
L
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
A2
X
L
L
L
L
H
H
H
H
L
L
L
L
H
H
H
H
A1
X
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
A0
X
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
EN
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
“ON” CHANNEL
None
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
2
Specifications HS-1840RH/883S
Absolute Maximum Ratings
Supply Voltage Between Pins 1 and 27 . . . . . . . . . . . . . . . . . . +40V
+VSUPPLY to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
-VSUPPLY to Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20V
VREF to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Analog input Overvoltage:
+VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+25V (Power On/Off)
-VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V (Power On)
Digital Input Overvoltage:
+VEN, +VA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VREF +4V
-VEN, -VA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND -4V
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . . .+275
o
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . . . .
θ
JA
θ
JC
Sidebraze Package . . . . . . . . . . . . . . . . . 83.1
o
C/W 19.1
o
C/W
Flatpack Package . . . . . . . . . . . . . . . . . . 49.1
o
C/W 16.5
o
C/W
Total Power Dissipation*:
Sidebraze DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . 1600mW
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . 1400mW
ESD Classification. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
* For DIP Derate 20.4mW/
o
C above T
A
= +95
o
C
For Flatpack Derate 18.5mW/
o
C above T
A
= +95
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage (±VSUPPLY)
. . . . . . . . . . . . . . . . . . . ±15V
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
VREF (Pin 13) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5V
Logic Low Level (VAL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.8V
Logic High Level (VAH). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.0V
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.0V, VAL = 0.8V
GROUP A
SUBGROUPS
7, 8A, 8B
Measure Inputs Sequentially
Ground All Unused Pins
VAL = 0.8V, VAH = 4.0V
VS = +10V, All Unused Inputs
and Output = -10V, VEN = 4V
VS = -10V, All Unused Inputs,
Output = +10V, VEN = 4V
V+, V-, VREF, A0, A1, A2, A3,A4,
EN = GND, Unused Inputs Tied to
GND, VS = +25V
VS = +25V, VD = 0V, VEN = 4V
All Unused Inputs Tied to GND
VS = -25V, VD = 0V, VEN = 4V All
Unused Inputs Tied to GND
VD = +10V, VEN = 4V All Unused
Inputs = -10V
VD = -10V, VEN = 4V All Unused
Inputs = +10V
VS = +25V, Measure VD,
VEN = 4V, All Unused Inputs to
GND
VS = -25V, Measure VD,
All Unused Inputs to GND
1, 2, 3
LIMITS
TEMPERATURE
-55
o
C, +25
o
C,
+125
o
C
-55
o
C, +25
o
C,
+125
o
C
+25
o
C
+125
o
C,-55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
-55
o
C, +25
o
C,
+125
o
C
-55
o
C, +25
o
C,
+125
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
-55
o
C, +25
o
C,
+125
o
C
-55
o
C, +25
o
C,
+125
o
C
MIN
-5
-1000
MAX
+15
1000
UNITS
V
nA
PARAMETER
Analog Signal Range
Input Leakage
Current, Address, or
Enable Pins
Leakage Current Into
the Source Terminal of
an “Off” Switch
SYMBOL
VS
IAH
IAL
+IS(OFF)
CONDITIONS
1
2, 3
1
2, 3
1
2, 3
-10
-100
-10
-100
-50
-100
10
100
10
100
50
100
nA
nA
nA
nA
nA
nA
-IS(OFF)
Leakage Current into
the Source Terminal of
an “Off” Switch With
Power “Off”
Leakage Current Into
the Source Terminal of
an “Off” Switch With
Overvoltage Applied
Leakage Current Into
the Drain Terminal of
an “Off” Switch
+IS(OFF)
Power Off
+IS(OFF)
Overvoltage
-IS(OFF)
Overvoltage
+ID(OFF)
1, 2, 3
1, 2, 3
1
2, 3
1
2, 3
1, 2, 3
-1000
-1000
-10
-100
-10
-100
-1000
1000
1000
10
100
10
100
1000
nA
nA
nA
nA
nA
nA
nA
-ID(OFF)
Leakage Current Into
the Drain Terminal of
an “Off” Switch With
Overvoltage Applied
+ID(OFF)
Overvoltage
-ID(OFF)
Overvoltage
1, 2, 3
-1000
1000
nA
3
Specifications HS-1840RH/883S
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.0V, VAL = 0.8V
GROUP A
SUBGROUPS
1
2, 3
1
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
-55
o
C, +25
o
C,
+125
o
C
-55
o
C, +25
o
C,
+125
o
C
-55
o
C, +25
o
C,
+125
o
C
-55
o
C, +25
o
C,
+125
o
C
-55
o
C, +25
o
C,
+125
o
C
-55
o
C, +25
o
C,
+125
o
C
-55
o
C, +25
o
C,
+125
o
C
MIN
-10
-100
-10
-100
50
50
50
-
-0.5
-
-0.5
MAX
10
100
10
100
1000
4000
2500
0.5
-
0.5
-
UNITS
nA
nA
nA
nA
Ω
Ω
Ω
mA
mA
mA
mA
PARAMETER
Leakage Current from
an “On” Driver into the
Switch (Drain & Source)
SYMBOL
+ID(ON)
CONDITIONS
VS = +10V, VD = +10V, VEN =
0.8V All unused inputs = -10V
VS = -10V, VD = -10V, VEN =
0.8V, All Unused Inputs = +10V
VS = +15V, ID = -1mA,
VEN = 0.8V
VS = -5V, ID = +1mA, VEN = 0.8V
VS = +5V, ID = -1mA, VEN = 0.8V
VEN = 0.8V
VEN = 0.8V
VEN = 4.0V
VEN = 4.0V
-ID(ON)
Switch On Resistance
+15V R(ON)
-5V R(ON)
+5V R(ON)
Positive Supply
Current
Negative Supply
Current
Positive Standby
Supply Current
Negative Standby
Supply Current
I(+)
I(-)
+ISBY
-ISBY
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.0V, VAL = 0.8V
GROUP A
SUBGROUPS
9
10, 11
TON(A),
TOFF(A)
TON(EN),
TOFF(EN)
RL = 10KΩ,CL = 50pF
9
10, 11
RL = 1000Ω, CL = 50pF
9
10, 11
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
25
5
-
-
-
-
MAX
-
-
600
1000
600
1000
UNITS
ns
ns
ns
ns
ns
ns
PARAMETER
Break-Before-Make
Time Delay
Propagation Delay
Times: Address Inputs
to I/O Channels
Enable to I/O
SYMBOL
TD
CONDITIONS
RL = 1000Ω, CL = 50pF
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized At: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.0V, VAL = 0.8V, Unless Otherwise Specified
LIMITS
PARAMETER
Capacitance Address
Input
Capacitance Channel
Input
Capacitance Channel
Output
Off Isolation
SYMBOL
CA
CS(OFF)
CD(OFF)
TOFF(EN)
VISO
CONDITIONS
+VS = -VS = 0V, f = 1MHz
+VS = -VS = 0V, f = 1MHz
+VS = -VS = 0V, f = 1MHz
VEN = 4.0V, f = 200kHz, CL = 7pF,
RL = 1kΩ, VS = 3.0VRMS
NOTE
1
1
1
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
-
-
45
MAX
7
5
50
-
UNITS
pF
pF
pF
dB
NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters and not directly tested. These parameters are
characterized upon initial design and after major process and/or design changes.
4
Specifications HS-1840RH/883S
TABLE 4. POST 200K RAD(Si) ELECTRICAL CHARACTERISTICS
Tested, per Mil-Std-883. Unless Otherwise Specified: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.5V, VAL = 0.5V
GROUP A
SUBGROUPS
1
1
1
1
LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-1000
-100
-100
-100
MAX
1000
100
100
100
UNITS
nA
nA
nA
nA
PARAMETER
Input Leakage Current,
Address, or Enable Pins
Leakage Current Into
the Source Terminal of
an “Off” Switch
SYMBOL
IAH
IAL
+IS(OFF)
-IS(OFF)
+IS(OFF)
Power Off
CONDITIONS
Measure Inputs Sequentially,
Ground All Unused Pins
VS = +10V, All Unused Inputs &
Output = -10V, VEN = 4.5V
VS = -10V, All Unused Inputs &
Output = +10V, VEN = 4.5V
V+, V-, VREF, A0, A1, A2, A3, A4,
EN = GND, Unused Inputs Tied to
GND, VS = +25V
VS = +25V, VD=0V, VEN=4.5V
All Unused Inputs Tied to GND
VS = -25V, VD=0V, VEN=4.5V
All Unused Inputs Tied to GND
VD = +10V, VEN = 4.5V
All Unused Inputs = -10V
VD = -10V, VEN = 4.5V
All Unused Inputs = +10V
VS = +25V, Measure VD,
VEN = 4.5V
All Unused Inputs to GND
VS = -25V, Measure VD,
VEN = 4.5V
All Unused Inputs to GND
VS = +10V, VD = +10V,
VEN = 0.5V
All Unused Inputs = -10V
VS = -10V, VD = -10V,
VEN = 0.5V
All Unused Inputs = +10V
VS = +15V, ID = -1mA, VEN = 0.5V
VS = -5V, ID = +1mA, VEN = 0.5V
VS = +5V, ID = -1mA, VEN = 0.5V
VEN = 0.5V
VEN = 0.5V
VEN = 4.5V
VEN = 4.5V
RL = 1000Ω, CL = 50pf
RL = 10KΩ, CL = 50pf
Leakage Current into
the Source Terminal of
an “Off” Switch With
Power “Off”
Leakage Current Into
the Source Terminal of
an “Off” Switch With
Overvoltage Applied
Leakage Current Into
the Drain Terminal of
an “Off” Switch
+IS(OFF)
Overvoltage
-IS(OFF)
Overvoltage
+ID(OFF)
-ID(OFF)
+ID(OFF)
Overvoltage
-ID(OFF)
Overvoltage
+ID(ON)
1
1
1
1
1
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-1500
-1500
-100
-100
-1000
1500
1500
100
100
1000
nA
nA
nA
nA
nA
Leakage Current Into
the Drain Terminal of
an “Off” Switch With
Overvoltage Applied
1
+25
o
C
-1000
1000
nA
Leakage Current from
an “On” Driver into the
Switch (Drain & Source)
1
+25
o
C
-100
100
nA
-ID(ON)
1
+25
o
C
-100
100
nA
Switch On Resistance
+15V R(ON)
-5V R(ON)
+5V R(ON)
1
1
1
1
1
1
1
9
9
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
50
50
50
-
-0.50
-
-0.50
5
-
1000
4000
2500
0.50
-
0.50
-
-
3000
Ω
Ω
Ω
mA
mA
mA
mA
ns
ns
Positive Supply
Current
Negative Supply
Current
Positive Standby
Supply Current
Negative Standby
Supply Current
Make-Before-Break
Time Delay
Propagation Delay
Times: Adress Inputs
to I/O Channels
Enable to I/O
I(+)
I(-)
+I(SBY)
-I(SBY)
TD
TON (A)
TOFF (A)
TON (EN)
TOFF (EN)
RL = 1000Ω, CL = 50pf
9
+25
o
C
-
3000
ns
5
GD32 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
