WESTCODE
An
Date:- 9 Feb, 2004
Data Sheet Issue:- 1
IXYS
Company
Fast Recovery Diode
Type M0790Y#200 to M0790Y#250
Old Type No.: SM12-20CXC294
Absolute Maximum Ratings
VOLTAGE RATINGS
V
RRM
V
RSM
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
2000-2500
2100-2600
UNITS
V
V
OTHER RATINGS
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)
I
f(d.c.)
I
FSM
I
FSM2
It
It
T
j op
T
stg
2
2
MAXIMUM
LIMITS
790
500
295
1490
1250
9000
9900
405×10
490×10
3
3
UNITS
A
A
A
A
A
A
A
As
As
°C
°C
2
2
Maximum average forward current, T
sink
=55°C, (note 2)
Maximum average forward current. T
sink
=100°C, (note 2)
Maximum average forward. T
sink
=100°C, (note 3)
Nominal RMS forward current, T
sink
=25°C, (note 2)
D.C. forward current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
RM
=60%V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
RM
≤10V,
(note 5)
I t capacity for fusing t
p
=10ms, V
RM
=60%V
RRM
, (note 5)
I t capacity for fusing t
p
=10ms, V
RM
≤10V,
(note 5)
2
2
Operating temperature range
Storage temperature range
-40 to +150
-40 to +150
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 150°C T
j
initial.
Data Sheet. Types M0790Y#200 to M0790Y#250 Issue 1
Page 1 of 11
February, 2004
WESTCODE
An IXYS Company
Characteristics
Fast Recovery Diode Types M0790Y#200 to M0790Y#250
PARAMETER
V
FM
V
T0
r
T
V
FRM
I
RRM
Q
rr
Q
ra
I
rm
t
rr
R
thJK
F
W
t
Maximum peak forward voltage
Threshold voltage
Slope resistance
Maximum forward recovery voltage
Peak reverse current
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time, 50% Chord
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
5.5
-
-
TYP.
-
-
-
-
-
-
-
425
300
150
4.0
-
-
-
90
140
MAX. TEST CONDITIONS
(Note 1)
1.6
2.2
1.272
0.584
40
80
30
-
330
-
-
0.05
0.10
8.5
-
-
Outline option YC
Outline option YH
Double side cooled
Single side cooled
I
FM
=1000A, t
p
=1000µs, di/dt=60A/µs,
V
r
=50V, 50% Chord.
di/dt = 1000A/µs, 25°C
di/dt = 1000A/µs
Rated V
RRM
I
FM
=635A
I
FM
=1580A
UNITS
V
V
mΩ
V
mA
µC
µC
A
µs
K/W
kN
g
Notes:-
1) Unless otherwise indicated T
j
=150°C.
Data Sheet. Types M0790Y#200 to M0790Y#250 Issue 1
Page 2 of 11
February, 2004
WESTCODE
An IXYS Company
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
20
22
24
25
V
RRM
(V)
2000
2200
2400
2500
Fast Recovery Diode Types M0790Y#200 to M0790Y#250
V
RSM
(V)
2100
2300
2500
2600
V
R
dc
(V)
1250
1350
1450
1500
2.0 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for T
j
below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of V
F
characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:
V
F
=
A
+
B
⋅
ln(
I
F
)
+
C
⋅
I
F
+
D
⋅
I
F
where I
F
= instantaneous forward current.
4.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
rm
chord as shown in Fig.(a) below.
(ii) Q
rr
is based on a 150µs integration time.
150
µ
s
I.e.
Q
rr
=
∫
i
0
rr
.
dt
(iii)
t
1
K Factor
=
t
2
Data Sheet. Types M0790Y#200 to M0790Y#250 Issue 1
Page 3 of 11
February, 2004
WESTCODE
An IXYS Company
5.0 Reverse Recovery Loss
Fast Recovery Diode Types M0790Y#200 to M0790Y#250
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
T
SINK
=
T
J
(
MAX
)
−
E
⋅
[
k
+
f
⋅
R
thJK
]
Where
k
= 0.2314 (°C/W)/s
E
= Area under reverse loss waveform per pulse in joules (W.s.)
f
= Rated frequency in Hz at the original sink temperature.
R
thJK
= d.c. thermal resistance (°C/W)
The total dissipation is now given by:
W
(
tot
)
=
W
(
original
)
+
E
⋅
f
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:
R
2
=
4
⋅
Where:
V
r
C
S
⋅
di dt
V
r
= Commutating source voltage
C
S
= Snubber capacitance
R = Snubber resistance
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
Data Sheet. Types M0790Y#200 to M0790Y#250 Issue 1
Page 4 of 11
February, 2004
WESTCODE
An IXYS Company
7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
Fast Recovery Diode Types M0790Y#200 to M0790Y#250
I
AV
−
V
T
0
+
V
T
0
+
4
⋅
ff
2
⋅
r
T
⋅
W
AV
=
2
⋅
ff
2
⋅
r
T
Where
V
T0
=1.272V,
r
T
= 0.584mΩ
ff
= form factor (normally unity for fast diode applications)
W
AV
=
∆
T
R
th
∆
T
=
T
j
(
MAX
)
−
T
K
7.2 Calculation of V
F
using ABCD Coefficients
The forward characteristic I
F
Vs V
F
, on page 6 is represented in two ways;
(i)
the well established V
T0
and r
T
tangent used for rating purposes and
(ii)
a set of constants A, B, C, and D forming the coefficients of the representative equation for V
F
in
terms of I
F
given below:
V
F
=
A
+
B
⋅
ln(
I
F
)
+
C
⋅
I
F
+
D
⋅
I
F
The constants, derived by curve fitting software, are given in this report for hot characteristics. The
resulting values for V
F
agree with the true device characteristic over a current range, which is limited to
that plotted.
25°C Coefficients
A
B
C
D
8.0 Frequency Ratings
The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum ratings
shown on page 1.
9.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
10.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
0.83145623
0.03084243
1.464 ×10
-4
125°C Coefficients
-0.01615497
0.217376
4.80803×10
-3.65163
-4
0.01939989
Data Sheet. Types M0790Y#200 to M0790Y#250 Issue 1
Page 5 of 11
February, 2004
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
