Schottky Barrier Diodes (SBD)
MA4L728
Silicon epitaxial planar type
Unit: mm
For high speed switching
For wave detection
3
2
0.020
±0.010
M
ain
Di
sc te
on na
tin nc
ue e/
d
I
Features
•
Low forward voltage V
F
and good wave detection efficiency
η
•
Small reverse current I
R
•
Small temperature coefficient of forward characteristic
•
1008-type mold leadless 4-pin package
4
1
1.00
±0.05
0.80
±0.05
0.60
±0.05
4
1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
R
I
F
Reverse voltage (DC)
Peak reverse voltage
V
RM
I
FM
T
j
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
T
stg
−55
to
+125
on
tin
Parameter
Symbol
I
R
ue
I
Electrical Characteristics
T
a
=
25°C
±
3°C
Reverse current (DC)
Forward voltage (DC)
/D
V
F1
C
t
t
rr
η
ce
V
F2
an
Terminal capacitance
Reverse recovery time
*
Detection efficiency
Note) 1. This product is sensitive to electric shock (static electricity, etc.).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: t
rr
measuring instrument
Input Pulse
t
r
10%
t
p
t
I
F
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
Output Pulse
Bias Application Unit N-50BU
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
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3
0.30
±0.03
0.20
±0.03
2
0.05
±0.03
Rating
30
30
30
Unit
V
V
0.60
mA
°C
°C
1 : Anode
2 : N.C.
3: Cathode
4 : Cathode
ML4-N1 Package
150
125
mA
Marking Symbol: 2
Internal Connection
3
2
4
1
Conditions
Min
Typ
Max
300
0.4
Unit
nA
V
V
R
=
30 V
I
F
=
1 mA
isc
I
F
=
30 mA
1.0
V
R
=
1 V, f
=
1 MHz
1.5
Ma
int
I
F
=
I
R
=
10 mA
I
rr
=
1 mA, R
L
=
100
Ω
en
1.0
65
V
in
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9
Ω,
C
L
=
10 pF
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.50
0.05
±0.03
pF
ns
%
Publication date: July 2001
SKH00100AED
1
MA4L728
I
F
V
F
10
3
75°C 25°C
10
2
10
2
10
3
I
R
V
R
1.6
1.4
V
F
T
a
Forward current I
F
(mA)
Forward voltage V
F
(V)
Reverse current I
R
(
µA
)
T
a
=
125°C
10
−20°C
T
a
=
125°C
1.2
1.0
0.8
0.6
0.4
0.2
10
75°C
I
F
=
30 mA
M
ain
Di
sc te
on na
tin nc
ue e/
d
1
1
10
–1
10
−1
25°C
3 mA
1 mA
40
80
120
160
200
10
–2
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage V
F
(V)
I
R
T
a
10
2
2.5
Forward surge current I
F(surge)
(A)
Reverse current I
R
(µA)
10
Terminal capacitance C
t
(pF)
V
R
=
30 V
10 V
1V
1
10
−1
Ambient temperature T
a
(
°C
)
ue
10
−2
−40
0
40
80
120
160
200
2
d
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10
−2
0
5
10
15
20
25
30
0
−40
0
Reverse voltage V
R
(V)
Ambient temperature T
a
(
°C
)
C
t
V
R
I
F(surge)
t
W
3.0
1 000
T
a
=
25°C
t
W
300
100
30
10
3
1
I
F(surge)
2.0
1.5
1.0
0.5
0.3
0
0
5
10
15
20
25
30
0.1
0.03
0.1
0.3
1
3
10
30
Ma
int
en
an
ce
/D
isc
on
tin
Reverse voltage V
R
(V)
Pulse width t
W
(ms)
SKH00100AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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int
en
an
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M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
pla
ue
di
nc
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