oH
VE S CO
AV R M
AI SIO PL
LA N IA
BL S NT
E
Features
■
■
■
■
■
Applications
■
■
■
■
■
Lead free versions available
RoHS compliant (lead free version)*
Low profile
Surface mount
Very low forward voltage drop
Cellular phones
PDAs
Desktop PCs and notebooks
Digital cameras
MP3 players
*R
CD216A-B120L ~ B140 MITE Chip Diode
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications in compact DO-216AA size chip package formats, which offer PCB real
estate savings and are considerably smaller than competitive parts. The Schottky Barrier Rectifier Diodes offer a forward current of 1 A with a
choice of repetitive peak reverse voltage of 20 V up to 40 V.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration
minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
B120L
B120R
CD216-
B130L
B140
Unit
Forward Voltage (Max.)
(If = 1 A)
Typical Junction
Capacitance*
Reverse Current (Max.)
(at Rated VR)
VF
CT
IR
0.45
90
400
0.53
75
10
0.38
70
410
0.55
60
500
V
pF
µA
* Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
B120L
B120R
CD216-
B130L
B140
Unit
Repetitive Peak Reverse Voltage
DC Blocking Voltage
RMS Voltage
Average Forward Current
@ TL = 130 °C
Peak Forward Surge Current**
Max. Instantaneous Forward Voltage***
@ IF = 0.1 A
@ IF = 1.0 A
@ IF = 2.0 A
@ IF = 3.0 A
Max. Instantaneous Reverse Current
@ VR = 40 V
@ VR = 30 V
@ VR = 20 V
@ VR = 10 V
@ VR = 5 V
Thermal Resistance
Junction to Lead (Anode)
Junction to Tab (Cathode)
Junction to Ambient
Storage Temperature
Junction Temperature
VRRM
VDC
VRMS
IO
IFSM
VF
20
20
14
20
20
14
1
30
30
21
40
40
28
V
V
V
A
50
0.34
0.45
0.65
50
0.455
0.53
0.595
50
0.30
0.38
0.52
40
0.36
0.55
0.85
0.50
A
V
IR
0.4
0.1
0.0100
0.0010
0.0005
35
20
250
-55 to +125
-55 to +150
0.41
0.13
0.05
0.15
mA
R
θJL
R
θJTAB
R
θJA
TSTG
TJ
°C/W
°C/W
°C/W
°C
°C
** Surge Current 8.3 ms single phase, half sine wave, 60 Hz (JEDEC Method).
*** Pulse Test; Pulse Width = 300 uS, Duty Cycle = 2 %.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD216A-B120L ~ B140 MITE Chip Diode
Product Dimensions
H
Recommended Pad Layout
A
A
B
C
K
B
J
D
E
Dimension
C
A (Max.)
B (Min.)
G
I
G
F
C (Min.)
D (Max.)
E
D
E (Min.)
Physical Specifications
DO-216AA
2.67
(0.105)
2.54
(0.100)
1.27
(0.050)
0.635
(0.025)
0.762
(0.030)
Dimension
A
B
C
D
E
F
G
H
I
J
K
(DO-216AA)
1.75 - 2.05
(0.069 - 0.081)
1.80 - 2.20
(0.071 - 0.087)
0.95 - 1.25
(0.037 - 0.049)
0.42 - 0.68
(0.017 - 0.027)
0.70 - 1.00
(0.028 - 0.039)
-0.05 - +0.10
(0.002 - 0.004)
0.10 - 0.25
(0.004 - 0.010)
3.65 - 3.95
(0.144 - 0.156)
0.40 - 0.70
(0.016 - 0.028)
1.10 - 1.50
(0.043 - 0.059)
0.20 - 0.80
(0.008 - 0.060)
MM
(INCHES)
Case..............................................JEDEC DO-216AA Molded plastic
Polarity ................................................Cathode designated by TAB 1
Weight ....................................................Approximately 0.016 grams
Mounting Position ................................................................One way
Typical Part Marking
CD216A-B120L ..........................................................................B2L
CD216A-B120R ..........................................................................B2E
CD216A-B130L ..........................................................................B3L
CD216A-B140 ............................................................................B4S
How To Order
CD 216A - B 1 20 L __
Common Code
Chip Diode
Package
• 216A = DO-216AA
Model
B = Schottky Barrier Series
Average Forward Current (Io) Code
1 = 1 A (Code x 1000 mA = Average Forward Current)
Reverse Voltage (VR) Code
20 = 20 V
30 = 30 V
40 = 40 V
Forward Voltage Suffix
L = Low Forward Voltage Vf (CD216-B120L, CD216-B130L)
R = Low Leakage Current IR (CD216-B120R)
Terminations
LF = 100 % Sn (lead free)
Blank = Sn/Pb
DIMENSIONS:
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD216A-B120L ~ B140 MITE Chip Diode
Rating and Characteristic Curves: CD216A-B120L
Forward Characteristics
10
Ta = 25 °C
Pulsewidth: 300 µs
10
125 °C
Reverse Characteristics
100
100 °C
Forward Current (Amps)
Reverse Current (µA)
1
1
0.1
25 °C
0.01
125 °C
0.1
0.0
100 °C
0.2
25 °C
0.4
Forward Voltage (Volts)
0.6
0.8
0.001
0
5
10
15
20
25
Reverse Voltage (Volts)
Derating Curve
1.25
Capacitance Between Terminals
200
180
1.00
Average Forward Current (Amps)
160
140
0.75
Capacitance (pF)
120
100
80
60
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
0.00
25
50
75
100
125
150
0
0
10
20
Reverse Voltage (Volts)
30
40
40
20
F = 1 MHz
Ta = 25
°C
0.50
0.25
Lead Temperature (°C)
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD216A-B120L ~ B140 MITE Chip Diode
Rating and Characteristic Curves: CD216A-B120R
Forward Characteristics
10
Ta = 25 °C
Pulsewidth: 300 µs
100
100 °C
Reverse Current (µA)
Reverse Characteristics
1000
125 °C
Forward Current (Amps)
10
1
1
0.1
25 °C
125 °C
0.1
0.2
100 °C
25 °C
0.4
Forward Voltage (Volts)
0.6
0.8
0.01
0
5
10
15
20
25
Reverse Voltage (Volts)
Derating Curve
1.25
Capacitance Between Terminals
150
1.00
Average Forward Current (Amps)
125
F = 1 MHz
Ta = 25
°C
100
0.75
Capacitance (pF)
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
0.00
25
50
75
100
125
150
0
Lead Temperature (°C)
0
10
20
Reverse Voltage (Volts)
30
40
75
0.50
50
0.25
25
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD216A-B120L ~ B140 MITE Chip Diode
Rating and Characteristic Curves: CD216A-B130L
Forward Characteristics
10
Ta = 25 °C
Pulsewidth: 300 µs
10
125 °C
Reverse Characteristics
100
100 °C
Forward Current (Amps)
Reverse Current (µA)
1
1
0.1
0.01
25 °C
100 °C
125 °C
0.1
0
0.2
0.4
0.6
0.8
1
25 °C
0.001
0
5
10
15
20
25
30
35
Reverse Voltage (Volts)
Forward Voltage (Volts)
Derating Curve
1.25
Capacitance Between Terminals
150
1.00
Average Forward Current (Amps)
125
F = 1 MHz
Ta = 25
°C
0.75
Capacitance (pF)
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
0.00
25
50
75
100
125
150
100
75
0.50
50
0.25
25
Lead Temperature (°C)
0
0
10
20
Reverse Voltage (Volts)
30
40
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
