Preliminary
GS8342S08/18/36E-400/300/250/200/167
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaSIO™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• DLL circuitry for wide output data valid window and future
frequency scaling
• Burst of 2 Read and Write
• 1.8 V +150/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ mode pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• Pin-compatible with future 72Mb and 144Mb devices
36Mb Burst of 2
DDR SigmaSIO-II SRAM
167 MHz–400 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
Bottom View
165-Bump, 15 mm x 17 mm BGA
1 mm Bump Pitch, 11 x 15 Bump Array
JEDEC Std. MO-216, Variation CAB-1
of 2 SigmaSIO-II SRAM also supplies Echo Clock outputs,
CQ and CQ, which are synchronized with read data output.
When used in a source synchronous clocking scheme, the Echo
Clock outputs can be used to fire input registers at the data’s
destination.
Because Separate I/O Burst of 2 RAMs always transfer data in
two packets, A0 is internally set to 0 for the first read or write
transfer, and automatically incremented by 1 for the next
transfer. Because the LSB is tied off internally, the address
field of a Burst of 2 RAM is always one address pin less than
the advertised index depth (e.g., the 2M x 18 has a 1M
addressable index).
SigmaRAM™ Family Overview
GS8342S18/36 are built in compliance with the SigmaSIO-II
SRAM pinout standard for Separate I/O synchronous SRAMs.
They are 37,748,736-bit (36Mb) SRAMs. These are the first in
a family of wide, very low voltage HSTL I/O SRAMs designed
to operate at the speeds needed to implement economical high
performance networking systems.
Clocking and Addressing Schemes
A Burst of 2 SigmaSIO-II SRAM is a synchronous device. It
employs dual input register clock inputs, K and K. The device
also allows the user to manipulate the output register clock
input quasi independently with dual output register clock
inputs, C and C. If the C clocks are tied high, the K clocks are
routed internally to fire the output registers instead. Each Burst
Parameter Synopsis
- 400
tKHKH
tKHQV
2.5 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
-200
5.0 ns
0.45 ns
-167
6.0 ns
0.5 ns
Rev: 1.00d 1/2004
1/36
© 2003, Giga Semiconductor, Inc.
Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.
Preliminary
GS8342S08/18/36E-400/300/250/200/167
4M x 8 SigmaQuad SRAM—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
D
OFF
NC
NC
NC
NC
NC
NC
TDO
2
V
SS
/SA
(72Mb)
NC
NC
D4
NC
NC
D5
V
REF
NC
NC
Q6
NC
D7
NC
TCK
3
SA
NC
NC
NC
Q4
NC
Q5
V
DDQ
NC
NC
D6
NC
NC
Q7
SA
4
R/W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
NW1
NC
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
6
K
K
SA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
C
C
7
NC
NW0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
LD
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
SA
NC
NC
NC
NC
NC
NC
V
DDQ
NC
NC
NC
NC
NC
NC
SA
10
SA
NC
NC
NC
D2
NC
NC
V
REF
Q1
NC
NC
NC
NC
NC
TMS
11
CQ
Q3
D3
NC
Q2
NC
NC
ZQ
D1
NC
Q0
D0
NC
NC
TDI
11 x 15 Bump BGA—15 x 17 mm2 Body—1 mm Bump Pitch
Notes:
1. Expansion addresses: A2 for 72Mb
2. NW0 controls writes to D0:D3. NW1 controls writes to D4:D7.
3. It is recommended that H1 be tied low for compatibility with future devices.
Rev: 1.00d 1/2004
2/36
© 2003, Giga Semiconductor, Inc.
Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.
Preliminary
GS8342S08/18/36E-400/300/250/200/167
2M x 18 SigmaQuad SRAM—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
D
OFF
NC
NC
NC
NC
NC
NC
TDO
2
V
SS
/SA
(144Mb)
Q9
NC
D11
NC
Q12
D13
V
REF
NC
NC
Q15
NC
D17
NC
TCK
3
SA
D9
D10
Q10
Q11
D12
Q13
V
DDQ
D14
Q14
D15
D16
Q16
Q17
SA
4
R/W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
BW1
NC
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
6
K
K
SA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
C
C
7
NC
BW0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
LD
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
SA
NC
NC
NC
NC
NC
NC
V
DDQ
NC
NC
NC
NC
NC
NC
SA
10
V
SS
/SA
(72Mb)
NC
Q7
NC
D6
NC
NC
V
REF
Q4
D3
NC
Q1
NC
D0
TMS
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
11 x 15 Bump BGA—15 x 17 mm2 Body—1 mm Bump Pitch
Notes:
4. Expansion addresses: A10 for 72Mb, A2 for 144Mb
5. BW0 controls writes to D0:D8. BW1 controls writes to D9:D17.
6. It is recommended that H1 be tied low for compatibility with future devices.
Rev: 1.00d 1/2004
3/36
© 2003, Giga Semiconductor, Inc.
Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.
Preliminary
GS8342S08/18/36E-400/300/250/200/167
1M x 36 SigmaQuad SRAM—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
Q27
D27
D28
Q29
Q30
D30
D
OFF
D31
Q32
Q33
D33
D34
Q35
TDO
2
V
SS
/SA
(288Mb)
Q18
Q28
D20
D29
Q21
D22
V
REF
Q31
D32
Q24
Q34
D26
D35
TCK
3
NC/SA
(72Mb)
D18
D19
Q19
Q20
D21
Q22
V
DDQ
D23
Q23
D24
D25
Q25
Q26
SA
4
R/W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
BW2
BW3
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
6
K
K
SA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
C
C
7
BW1
BW0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
LD
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
SA
D17
D16
Q16
Q15
D14
Q13
V
DDQ
D12
Q12
D11
D10
Q10
Q9
SA
10
V
SS
/SA
(144Mb)
Q17
Q7
D15
D6
Q14
D13
V
REF
Q4
D3
Q11
Q1
D9
D0
TMS
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
11 x 15 Bump BGA—15 x 17 mm2 Body—1 mm Bump Pitch
Notes:
1. Expansion addresses: A3 for 72Mb, A10 for 144Mb, A2 for 288Mb
2. BW0 controls writes to D0:D8. BW1 controls writes to D9:D17.
3. BW2 controls writes to D18:D26. BW3 controls writes to D27:D35.
4. It is recommended that H1 be tied low for compatibility with future devices.
Rev: 1.00d 1/2004
4/36
© 2003, Giga Semiconductor, Inc.
Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.
Preliminary
GS8342S08/18/36E-400/300/250/200/167
Pin Description Table
Symbol
SA
NC
R/W
NW0–NW1
BW0–BW1
BW0–BW3
K
C
TMS
TDI
TCK
TDO
V
REF
ZQ
K
C
D
OFF
LD
CQ
CQ
Dn
Qn
V
DD
V
DDQ
V
SS
Description
Synchronous Address Inputs
No Connect
Read/Write Contol Pin
Synchronous Nybble Writes
Synchronous Byte Writes
Synchronous Byte Writes
Input Clock
Output Clock
Test Mode Select
Test Data Input
Test Clock Input
Test Data Output
HSTL Input Reference Voltage
Output Impedance Matching Input
Input Clock
Output Clock
DLL Disable
Synchronous Load Pin
Output Echo Clock
Output Echo Clock
Synchronous Data Inputs
Synchronous Data Outputs
Power Supply
Isolated Output Buffer Supply
Power Supply: Ground
Type
Input
—
Input
Input
Input
Input
Input
Input
Input
Input
Input
Output
Input
Input
Input
Output
—
—
Output
Output
Input
Output
Supply
Supply
Supply
Comments
—
—
Write Active Low; Read Active High
Active Low
x08 Version
Active Low
x18 Version
Active Low
x36 Version
Active High
Active High
—
—
—
—
—
—
Active Low
Active Low
Active Low
Active Low
Active Low
Active High
1.8 V Nominal
1.8 or 1.5 V Nominal
—
Notes:
1. C, C, K, or K cannot be set to V
REF
voltage.
2. When ZQ pin is directly connected to V
DD
, output impedance is set to minimum value and it cannot be connected to ground or left
unconnected.
3. NC = Not Connected to die or any other pin
Rev: 1.00d 1/2004
5/36
© 2003, Giga Semiconductor, Inc.
Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.
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