IRFP360
Data Sheet
July 1999
File Number
2290.3
23A, 400V, 0.200 Ohm, N-Channel Power
MOSFET
Title
FP3
b-
t
A,
0V,
00
m,
an-
wer
OS-
T)
utho
ey-
rds
A,
0V,
00
m,
an-
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OS-
T,
er-
rpo-
on,
-
7)
e-
r ()
OCI
O
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17464.
Features
• 23A, 400V
• r
DS(ON)
= 0.200
Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
IRFP360
PACKAGE
TO-247
BRAND
IRFP360
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
©2001 Fairchild Semiconductor Corporation
IRFP360 Rev. A
IRFP360
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFP360
400
400
23
14
92
±
20
250
2
1200
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
300
260
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
Ω)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
gfs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured between the
Contact Screw on Header
closer to Source and Gate
Pins and Center of Die
Measured from the Source
Lead, 6mm (0.25in) from
Header and Source
Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
I
D
= 250
µ
A, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= 250
µ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±
20V
I
D
= 13A, V
GS
= 10V (Figures 8, 9)
V
DS
≥
50V, I
DS
> 13A (Figure 12)
V
DD
= 200V, I
D
≈
25A, R
GS
= 4.3
Ω,
V
GS
= 10V,
R
L
= 7.5
Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
V
GS
= 10V, I
D
= 25A, V
DS
= 0.8 x Rated BV
DSS
I
G(REF)
= 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
MIN
400
2
-
-
23
-
-
14
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
0.18
21
22
94
80
66
68
17
24
4000
550
97
5.0
MAX
-
4
25
250
-
±
100
0.20
-
33
140
120
99
100
-
-
-
-
-
-
UNITS
V
V
µ
A
µ
A
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
L
S
-
13
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θ
JC
R
θ
JA
Free Air Operation
-
-
-
-
0.50
30
o
C/W
o
C/W
©2001 Fairchild Semiconductor Corporation
IRFP360 Rev. A
IRFP360
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 2)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier
G
D
MIN
-
-
TYP
-
-
MAX
23
92
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 23A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 25A, dI
SD
/dt = 100A/
µ
s
T
J
= 25
o
C, I
SD
= 25A, dI
SD
/dt = 100A/
µ
s
-
200
3.1
-
460
7.1
1.8
1000
16
V
ns
µ
C
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 4mH, R
G
= 25Ω, Peak I
AS
= 23A.
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
Unless Otherwise Specified
25
0.8
0.6
0.4
0.2
0
I
D
, DRAIN CURRENT (A)
20
15
10
5
0
0
50
100
150
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
Z
θJC,
TRANSIENT THERMAL
IMPEDANCE (
o
C/W)
0.5
0.1
0.2
0.1
0.05
10
-2
0.02
0.01
SINGLE PULSE
10
-3
10
-5
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
0.1
10
-3
10
-2
t
1
, RECTANGULAR PULSE DURATION (S)
1
10
P
DM
10
-4
FIGURE 3. TRANSIENT THERMAL IMPEDANCE
©2001 Fairchild Semiconductor Corporation
IRFP360 Rev. A
IRFP360
Typical Performance Curves
10
3
OPERATION IN THIS
AREA IS LIMITED
BY r
DS(ON)
I
D
, DRAIN CURRENT (A)
10
2
10µs
100µs
10
1ms
10ms
1
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
0.1
1
10
10
2
10
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
DC
Unless Otherwise Specified
(Continued)
40
V
GS
= 10V
32
V
GS
= 6.0V
24
V
GS
= 5.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
16
8
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
160
200
0
0
40
80
120
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
32
V
GS
= 6.0V
24
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
10
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DS
≥
50V
10
16
V
GS
= 5.5V
T
J
= 150
o
C
1
T
J
= 25
o
C
8
V
GS
= 4.0V
0
0
2
4
6
V
GS
= 5.0V
V
GS
= 4.5V
8
10
0.1
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
4
6
8
V
SD
, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
2.0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.0
r
DS(ON),
DRAIN TO SOURCE
ON RESISTANCE
1.6
V
GS
= 10V
1.2
2.4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
=13A
1.8
0.8
1.2
0.4
V
GS
= 20V
0.6
0
0
0
30
60
90
I
D
, DRAIN CURRENT (A)
120
150
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
IRFP360 Rev. A
IRFP360
Typical Performance Curves
1.25
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
1.15
C, CAPACITANCE (nF)
8000
C
ISS
6000
C
OSS
4000
Unless Otherwise Specified
(Continued)
10000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
1.05
0.95
0.85
2000
C
RSS
0.75
-40
0
40
80
120
160
0
1
T
J
, JUNCTION TEMPERATURE (
o
C)
2
5
10
2
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
2
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
50
g
fs
, TRANSCONDUCTANCE (S)
I
SD
, SOURCE TO DRAIN CURRENT (A)
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DS
≥
50V
10
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
30
T
J
= 25
o
C
T
J
= 150
o
C
10
T
J
= 25
o
C
20
T
J
= 150
o
C
10
0
1
0
10
20
30
I
D
, DRAIN CURRENT (A)
40
50
0
0.4
0.8
1.2
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
1.6
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 25A
16
V
DS
= 80V
V
DS
= 320V
12
8
4
0
0
25
50
75
100
125
Q
g
, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2001 Fairchild Semiconductor Corporation
IRFP360 Rev. A
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