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BTS 441 T
Smart Highside Power Switch
One Channel: 20mΩ
Product Summary
On-state Resistance
Operating Voltage
Nominal load current
Current limitation
RON
Vbb(on)
IL(ISO)
IL(lim)
20mΩ
4.75 ... 41V
21A
65A
Package
TO-220-5-11
TO-263-5-2
TO-220-5-12
Standard
SMD
Straight
General Description
•
•
N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically
integrated in Smart SIPMOS
®
technology.
Providing embedded protective functions.
Application
•
•
•
•
µC
compatible power switch for 5V, 12 V and 24 V DC applications
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Funktions
•
•
•
•
•
Very low standby current
Optimized static
electromagnetic compatibility
(EMC)
µC and CMOS compatible
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Protection Functions
•
•
•
•
•
•
•
•
Short circuit protection
Current limitation
Overload protection
Thermal shutdown
Overvoltage protection (including load dump) with external
GND-resistor
Reverse battery protection with external GND-resistor
Loss of ground and loss of
V
bb protection
Electrostatic discharge
(ESD) protection
Vbb
IN
Logic
with
protection
functions
OUT
Load
PROFET
GND
Infineon Technologies AG
1 of 11
2003-Oct-01
BTS 441 T
Functional diagram
overvoltage
protection
internal
voltage supply
logic
gate
control
+
charge
pump
current limit
VBB
clamp for
inductive load
OUT
IN
ESD
temperature
sensor
LOAD
GND
PROFET
Pin Definitions and Functions
Pin
1
2
3
4
5
Tab
Symbol
GND
IN
Vbb
N.C.
OUT
Vbb
Function
Logic ground
Input,
activates the power switch in
case of logical high signal
Positive power supply voltage
The tab is shorted to pin 3
Not connected
Output
to the load
Positive power supply voltage
The tab is shorted to pin 3
Pin configuration
(top view)
Tab = V
BB
1
2
(3)
4
5
GND IN
NC OUT
Infineon Technologies AG
2
2003-Oct-01
BTS 441 T
Maximum Ratings
at T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150°C
Load dump protection
1)
V
LoadDump
=
V
A
+
V
s
,
V
A
= 13.5 V
R
I
2)
= 2
Ω,
R
L
= 0,5
Ω,
t
d
= 200 ms, IN= low or high
Load current (Short-circuit current, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC) ; TC≤25°C
Maximal switchable inductance, single pulse
V
bb
= 12V,
T
j,start
= 150°C,
T
C
= 150°C const.
(see diagram, p.8)
I
L(ISO)
= 21 A, RL= 0
Ω:
E
4)
AS
=0.7J:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
Out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Symbol
V
bb
V
bb
V
Load dump3)
I
L
T
j
T
stg
P
tot
Z
L
V
ESD
Values
43
34
60
self-limited
-40 ...+150
-55 ...+150
125
2.1
1.0
8.0
-10 ... +16
±2.0
≤
1
≤
75
≤
33
Unit
V
V
V
A
°C
W
mH
kV
Input voltage (DC)
Current through input pin (DC)
see internal circuit diagrams page 7
V
IN
I
IN
R
thJC
R
thJA
V
mA
K/W
Thermal resistance
chip - case:
junction - ambient (free air):
SMD version, device on pcb
5)
:
1)
2)
3)
4)
5)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND pin, e.g. with a 150
Ω
resistor in the GND connection. A resistor for the protection of the input is integrated.
R
I
= internal resistance of the load dump test pulse generator
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
E
AS
is the maximum inductive switch off energy
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Infineon Technologies AG
3
2003-Oct-01
BTS 441 T
Electrical Characteristics
Parameter and Conditions
at
T
j
=-40...+150°C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance
(Vbb (pin3) to OUT (pin5)
);
I
L
= 2 A V
bb
≥7V
:
T
j
=25 °C:
R
ON
T
j
=150 °C:
see diagram page 9
--
15
28
21
--
90
110
--
--
20
37
--
2
200
250
1
1
mΩ
Nominal load current
(pin 3 to 5)
‘ISO 10483-1, 6.7:V
ON
=0.5V,
T
C
=85°C
I
L(ISO)
I
L(GNDhigh)
17
--
40
40
0.1
0.1
A
mA
µs
V/µs
V/µs
Output current
(pin 5)
while GND disconnected or
GND pulled up
6)
, V
bb
=30 V, V
IN
= 0,
see diagram page 7
Turn-on time
IN
Turn-off time
IN
R
L
= 12
Ω
,
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12
Ω
,
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12
Ω
,
to 90%
V
OUT
:
t
on
to 10%
V
OUT
:
t
off
dV /dt
on
-dV/dt
off
Operating Parameters
Operating voltage
T
j
=-40°C
V
bb(on)
T
j
=+25°C
T
j
=+105°C
6)
T
j
=+150°C
Overvoltage protection
7)
T
j
=-40°C:
V
bb(AZ)
I
bb
= 40 mA
T
j
=+25...+150°C:
Standby current (pin 3)
8)
T
j
=-40...+25°C
:
I
bb(off)
T
j
=+105°C
6)
:
V
IN
=0
see diagram page 9
T
j
=+150°C:
I
L(off)
Off-State output current (included in
I
bb(off)
)
V
IN
=0
Operating current (Pin 1)
9)
,
V
IN
=5 V,
I
GND
4.75
4.75
4.75
5.0
41
43
--
--
--
--
--
--
--
--
--
--
47
5
--
--
1.5
2
41
43
43
43
--
52
10
10
25
10
4
V
V
µA
µA
mA
6)
7)
8)
9)
not subject to production test, specified by design
see also
V
ON(CL)
in table of protection functions and circuit diagram page 7
Measured with load, typ. 40 µA without load.
Add
I
IN
, if
V
IN
>5.5 V
Infineon Technologies AG
4
2003-Oct-01
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