REVISIONS
LTR
A
DESCRIPTION
Change to the delta limit in table IIB for the input leakage current.
Update boilerplate. - rrp
Changes to the limits for the digital input voltage and analog input voltage
ratings in section 1.3. Delete dose rate upset test in section 1.5.
Remove dose rate upset testing paragraph in section 4. - rrp
Delete the I
D(OFF)
over-voltage test as specified under TABLE I. - ro
Make change to the die size as specified under APPENDIX A. - ro
Make change to the continuous current description as specified under 1.3. - ro
Add device type 02. Make changes to paragraphs 1.5, 3.2.5, and 4.4.4.2.
Delete figure 4 radiation exposure circuit. Delete SEP effective let no upset,
Dose rate latchup testing, Dose rate burnout, Single event phenomena, and
additional information paragraphs. Delete device class M requirements. - ro
DATE (YR-MO-DA)
01-05-11
APPROVED
R. MONNIN
B
C
D
E
02-08-29
05-03-03
06-02-13
07-01-29
R. MONNIN
R. MONNIN
R. MONNIN
J. RODENBECK
F
13-05-28
C. SAFFLE
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
F
15
F
16
F
17
F
18
REV
SHEET
PREPARED BY
RAJESH PITHADIA
F
1
F
2
F
3
F
4
F
5
F
6
F
7
F
8
F
9
F
10
F
11
F
12
F
13
F
14
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
RAJESH PITHADIA
APPROVED BY
RAYMOND MONNIN
DRAWING APPROVAL DATE
00-05-25
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
MICROCIRCUIT, LINEAR, RADIATION
HARDENED, CMOS HIGH SPEED QUAD SPST
ANALOG SWITCH, MONOLITHIC SILICON
SIZE
A
CAGE CODE
AMSC N/A
REVISION LEVEL
F
67268
SHEET
1 OF 18
5962-99618
DSCC FORM 2233
APR 97
5962-E348-13
1. SCOPE
1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device class Q ),
space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case
outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of
Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the
manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended
application.
1.2 PIN. The PIN is as shown in the following example:
5962
F
99618
01
V
E
C
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
Generic number
HS-201HSRH
HS-201HSEH
Circuit function
Radiation hardened, DI, high speed quad
SPST CMOS analog switch
Radiation hardened, DI, high speed quad
SPST CMOS analog switch
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Q, V
T
Device requirements documentation
Certification and qualification to MIL-PRF-38535
Certification and qualification to MIL-PRF-38535 with performance as specified
in the device manufacturers approved quality management plan.
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
E
X
Descriptive designator
CDIP2-T16
CDFP4-F16
Terminals
16
16
Package style
Dual-in-line
Flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-99618
SHEET
F
2
1.3 Absolute maximum ratings. 1/ 2/
Positive supply voltage (V+ to ground) ..................................................................... +18 V
Negative supply voltage (V- to ground) .................................................................... -18 V
Digital input voltage (V
IN
) .........................................................................................
±17
V
Analog input voltage, one switch (V
S
) ......................................................................
±17
V
Maximum power dissipation (P
D
) ............................................................................. 750 mW
Maximum junction temperature (T
J
) .........................................................................
Lead temperature (soldering, 10 seconds) ...............................................................
Thermal resistance, junction-to-case (θ
JC
)
Case outlines E and X ............................................................................................
Thermal resistance, junction-to-ambient (θ
JA
):
Case outline E .......................................................................................................
Case outline X .......................................................................................................
Storage temperature range .......................................................................................
Peak current, S or D (pulsed at 1 ms, 10 percent duty cycle max) ...........................
Continuous current, any terminal ..............................................................................
1.4 Recommended operating conditions.
Positive supply voltage (V+) ...................................................................................... +15 V dc
Negative supply voltage (V-) ..................................................................................... -15 V dc
Minimum high level input voltage (V
IH
) ..................................................................... 2.4 V dc
Maximum low level input voltage (V
IL
) ...................................................................... 0.8 V dc
Ambient operating temperature range (T
A
) ............................................................... -55°C to +125°C
Ground (GND) ........................................................................................................... 0 V dc
1.5 Radiation features:
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):
Device type 01:
Device classes Q or V ........................................................................................
Device class T ....................................................................................................
Device type 02 .......................................................................................................
Maximum total dose available (dose rate
≤
0.01 rad(Si)/s):
Device type 02 .......................................................................................................
Single event latch-up (SEL) .......................................................................................
+175°C
+275°C
12°C/W
80°C/W
95°C/W
-65°C to +150°C
50 mA
25 mA
300 krads(Si) 3/
100 krads(Si) 3/
300 krads(Si) 4/
50 krads(Si) 4/
No latch up 5/
_______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ Unless otherwise specified, all voltages are referenced to ground.
3/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate
effects. The radiation end point limits for the noted parameters are guaranteed only for the conditions as
specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si) for class V or Q and
100 krads(Si) for class T.
4/ Device type 02 radiation end point limits for the noted parameters are guaranteed only for the conditions as
specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si), and condition D to a
maximum total dose of 50 krads(Si).
5/ Devices use dielectrically isolated (DI) technology and latch up is physically not possible.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-99618
SHEET
F
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
http://quicksearch.dla.mil
or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q, T and V.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Functional diagram. The functional diagram shall be as specified on figure 2.
3.2.4 Switching waveforms. The switching waveforms shall be as specified on figure 3.
3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-99618
SHEET
F
4
TABLE I. Electrical performance characteristics.
Conditions 1/
-55°C
≤
T
A
≤
+125°C
V+ = +15 V dc,
V- = -15 V dc
unless otherwise specified
Analog signal range
ON resistance
V
S
R
DS(ON)
T
A
= +25°C
3/
4
1
2,3
M,D,P,L,R,F
Source OFF leakage
current
I
S(OFF)
V
S
=
±14
V, V
D
=
±14
V,
V
IN
= 2.4 V
M,D,P,L,R,F
Drain OFF leakage
current
I
D(OFF)
V
S
=
±14
V, V
D
=
±14
V,
V
IN
= 2.4 V
M,D,P,L,R,F
Channel ON leakage
current
I
D(ON)
V
D
= V
S
=
±14
V,
V
IN
= 0.8 V
M,D,P,L,R,F
Input leakage current
(low)
I
IL
V
IN
under test = 0.8 V,
all other V
IN
= 4.0 V
M,D,P,L,R,F
Input leakage current
(high)
I
IH
V
IN
under test = 4.0 V,
all other V
IN
= 0.8 V
M,D,P,L,R,F
Positive supply current
I+
V
IN
= 2.4 V or V
IN
= 0.8 V
for all switches
M,D,P,L,R,F
Negative supply current
I-
V
IN
= 2.4 V or V
IN
= 0.8 V
for all switches
M,D,P,L,R,F
Input threshold (low)
V
AL
V
S
= -10 V input,
V
D
= 1 mA load
M,D,P,L,R,F
Input threshold (high)
V
AH
V
S
= -10 V input,
V
D
= 1 mA load
M,D,P,L,R,F
See footnotes at end of table.
1
2.4
1
1,2,3
01, 02
2.4
0.8
V
1
1,2,3
1
1,2,3
1
1,2,3
01, 02
01, 02
01, 02
±40
12
12
12
12
0.8
V
mA
mA
1
1,2,3
01, 02
±500
±40
µA
1
1
2, 3
1
1
2, 3
1
1
2, 3
1
1,2,3
01, 02
01, 02
01, 02
01, 02
01, 02
01, 02
V
S
=
±10
V, I
D
= 1 mA,
V
IN
= 0.8 V
Test
Symbol
Group A
subgroups
Device
type
Limits 2/
Min
Max
±15
50
75
50
±10
±100
±10
±10
±100
±10
±10
±100
±10
±500
V
Ω
Unit
nA
nA
nA
µA
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-99618
SHEET
F
5
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