MMBR571MLT1/MRF5711MLT1
RF PRODUCTS
DIVISION
RF & MICROWAVE TRANSISTORS
DESCRIPTION
KEY FEATURES
W W W .
Microsemi
.COM
The MMBR571MLT1/MRF5711MLT1 are low noise, high gain, discrete
silicon bipolar transistors housed in low cost plastic packages.
!
High FTau-8GHz
!
Low noise-2.2dB@1GHz
IM
EL
PR
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
C)
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
!
Low cost SOT23/SOT143
package
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
20
10
2.5
80
333
150
-55 to +150
Unit
V
V
V
mA
mW
C
C
!
LNA, Oscillator, Pre-Driver
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance
225
C/W
SOT-143
SOT-23
MMBR571MLT1 MRF5711MLT1
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
IN
Min.
20
10
50
Typ.
Min.
Typ.
0.7
8.0
2.2
11.5
10
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
Test
I
C
= .1mA
I
C
=.1mA
V
CB
= 8V
V
CE
= 5 V
Conditions
I
E
= 0
I
B
= 0
I
E
= 0
I
C
= 30mA
Max.
10
300
Units
V
V
uA
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Y
AR
Max.
Units
PF
GHz
MMBR571MLT1/MRF5711MLT1
Symbol
C
CB
FTau
NFmin
G
NF
S 21
2
Test
Conditions
= 1.0 GHz
= 1.0 GHz
= 1.0 GHz
= 1.0 GHz
V
CB
= 10 V
f
= 1.0 MHz
V
CE
= 5 V I
C
= 50 mA
f
V
CE
= 6 V I
C
= 10 mA
f
V
CE
= 6 V I
C
= 10 mA
f
V
CE
= 6 V I
C
= 10 mA
f
dB
dB
dB
Copyright 2000
CXXXX.PDF 2000-11-06
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Microsemi
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