HN58V65AI Series
HN58V66AI Series
HN58V65A-SR Series
HN58V66A-SR Series
64k EEPROM (8-kword
×
8-bit)
Ready/Busy function,
RES
function (HN58V66A)
Wide Temperature Range version
REJ03C0153-0300Z
(Previous ADE-203-759B(Z) Rev.2.0)
Rev. 3.00
Feb.02.2004
Description
Renesas Technology’s HN58V65A series and HN58V66A series are electrically erasable and
programmable EEPROM’s organized as 8192-word
×
8-bit. They have realized high speed, low power
consumption and high reliability by employing advanced MNOS memory technology and CMOS process
and circuitry technology. They also have a 64-byte page programming function to make their write
operations faster.
Features
•
Single supply: 2.7 to 5.5 V
•
Access time:
100 ns (max) at 2.7 V
≤
V
CC
< 4.5 V
70 ns (max) at 4.5 V
≤
V
CC
≤
5.5 V
•
Power dissipation:
Active: 20 mW/MHz (typ)
Standby: 110
µW
(max)
•
On-chip latches: address, data,
CE, OE, WE
•
Automatic byte write: 10 ms (max)
•
Automatic page write (64 bytes): 10 ms (max)
•
Ready/Busy
•
Data
polling and Toggle bit
•
Data protection circuit on power on/off
Rev.3.00, Feb.02.2004, page 1 of 26
HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series
Features
(cont)
•
•
•
•
•
•
•
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
10
5
erase/write cycles (in page mode)
10 years data retention
Software data protection
Write protection by
RES
pin (only the HN58V66A series)
Operating temperature range:
HN58V65AI/HN58V66AI Series:
−40
to +85°C
HN58V65A-SR/HN58V66A-SR Series:
−20
to +85°C
•
There are also lead free products.
Ordering Information
Access time
Type No.
HN58V65API-10
HN58V66API-10
HN58V65AFPI-10
HN58V66AFPI-10
HN58V65ATI-10
HN58V66ATI-10
HN58V65AT-10SR
HN58V66AT-10SR
HN58V65API-10E
HN58V66API-10E
2.7 V
≤
V
CC
< 4.5 V 4.5 V
≤
V
CC
≤
5.5 V Package
100 ns
100 ns
100 ns
100 ns
100 ns
100 ns
100 ns
100 ns
100 ns
100 ns
70 ns
70 ns
70 ns
70 ns
70 ns
70 ns
70 ns
70 ns
70 ns
70 ns
70 ns
70 ns
70 ns
70 ns
70 ns
70 ns
600 mil 28-pin plastic DIP (DP-28V)
Lead free
400 mil 28-pin plastic SOP (FP-28DV)
Lead free
28-pin plastic TSOP(TFP-28DBV)
Lead free
28-pin plastic TSOP(TFP-28DB)
400 mil 28-pin plastic SOP (FP-28D)
600 mil 28-pin plastic DIP (DP-28)
HN58V65AFPI-10E 100 ns
HN58V66AFPI-10E 100 ns
HN58V65ATI-10E
HN58V66ATI-10E
100 ns
100 ns
HN58V65AT-10SRE 100 ns
HN58V66AT-10SRE 100 ns
Rev.3.00, Feb.02.2004, page 2 of 26
HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series
Pin Arrangement
HN58V65API Series
HN58V65AFPI Series
RDY/Busy
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
(Top view)
HN58V66API Series
HN58V66AFPI Series
RDY/Busy
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
(Top view)
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
RES
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
I/O3
I/O4
I/O5
I/O6
I/O7
CE
A10
15
16
17
18
19
20
21
22
23
24
25
26
27
28
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
HN58V65ATI Series
HN58V65AT-SR Series
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
I/O3
I/O4
I/O5
I/O6
I/O7
CE
A10
15
16
17
18
19
20
21
22
23
24
25
26
27
28
14
13
12
11
10
9
8
7
6
5
4
3
2
1
A3
A4
A5
A6
A7
A12
RDY/Busy
V
CC
WE
NC
A8
A9
A11
OE
(Top view)
HN58V66ATI Series
HN58V66AT-SR Series
14
13
12
11
10
9
8
7
6
5
4
3
2
1
A3
A4
A5
A6
A7
A12
RDY/Busy
V
CC
WE
RES
A8
A9
A11
OE
(Top view)
Rev.3.00, Feb.02.2004, page 3 of 26
HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series
Pin Description
Pin name
A0 to A12
I/O0 to I/O7
OE
CE
WE
V
CC
V
SS
RDY/Busy
RES*
1
NC
Function
Address input
Data input/output
Output enable
Chip enable
Write enable
Power supply
Ground
Ready busy
Reset
No connection
Note: 1. This function is supported by only the HN58V66A series.
Block Diagram
Note: 1. This function is supported by only the HN58V66A series.
V
CC
V
SS
RES
*
1
OE
CE
WE
RES
*
1
A0
to
I/O0
to
I/O7
High voltage generator
RDY/Busy
I/O buffer
and
input latch
Control logic and timing
Y decoder
Address
buffer and
latch
Y gating
A5
A6
to
X decoder
Memory array
A12
Data latch
Rev.3.00, Feb.02.2004, page 4 of 26
HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series
Operation Table
Operation
Read
Standby
Write
Deselect
Write Inhibit
Data
Polling
Program reset
CE
V
IL
V
IH
V
IL
V
IL
×
×
V
IL
×
OE
V
IL
×*
2
WE
V
IH
×
V
IL
V
IH
V
IH
×
V
IH
×
RES*
3
V
H
*
1
×
V
H
V
H
×
×
V
H
V
IL
RDY/Busy
High-Z
High-Z
High-Z to V
OL
High-Z
V
OL
High-Z
I/O
Dout
High-Z
Din
High-Z
Dout (I/O7)
High-Z
V
IH
V
IH
×
V
IL
V
IL
×
Notes: 1. Refer to the recommended DC operating conditions.
2.
×
: Don’t care
3. This function supported by only the HN58V66A series.
Absolute Maximum Ratings
Parameter
Power supply voltage relative to V
SS
Input voltage relative to V
SS
Operating temperature range
*
2
HN58V65AI/HN58V66AI
Symbol
V
CC
Vin
Topr
Value
–0.6 to +7.0
–0.5*
1
to
+7.0*
3
–40 to +85
–20 to +85
–55 to +125
Unit
V
V
°C
°C
°C
HN58V65A-SR/HN58V66A-SR Topr
Storage temperature range
Notes: 1. Vin min : –3.0 V for pulse width
≤
50 ns.
2. Including electrical characteristics and data retention.
3. Should not exceed V
CC
+ 1 V.
Tstg
Rev.3.00, Feb.02.2004, page 5 of 26
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
