Schottky Barrier Diodes for
Stripline, Microstrip Mixers and
Detectors
Technical Data
5082-2207/09
5082-2794
Features
•
Small Size
• Low Noise Figure
6 dB Typical at 9 GHz
• Rugged Design
• High Uniformity
• High Burnout Rating
1 W RF Pulse Power Incident
• Both Medium and Low
Barrier Available
Outline C2
C
P
= 0.055 pF
ANGLE CUT 30-50°
ALTERNATE 0.13 (.005)
DIA. HOLE 1.5 (0.06)
FROM END
CATHODE
Description/Applications
This family consists of medium
barrier and low barrier beam lead
diodes mounted in easily handled
carrier packages. Low barrier
diodes provide optimum noise
figure at low local oscillator drive
levels. Medium barrier diodes
provide a wider dynamic range for
lower distortion mixer designs.
Application Note 976 presents
design techniques for an X-Band
mixer.
Note:
For new designs, the HSMS-286X and
HSMS-820X series of surface mount
microwave diodes are recommended.
0.46 (0.018)
0.30 (0.012)
1.40 (0.055)
1.14 (0.045)
SQUARE
3.81 (0.150)
MIN.
Package Characteristics
These diodes are designed for
microstrip and stripline use. The
kovar leads provide good
continuity of transmission line
impedance to the diode. Outline
C2 is a plastic on ceramic
package. The ceramic is alumina.
0.36 (0.014)
MAX.
1.27 (0.050)
MAX.
0.10
(0.004)
TYP.
DIMENSIONS IN MILLIMETERS AND (INCHES).
2
Maximum Ratings
Operating and Storage Temperature Range
C2 Packaged Diodes ........................................................-65°C to +150
°C
Pulse Power Incident at T
CASE
= 25°C ..................................................... 1 W
(1
µs
pulse, Du = 0.001)
CW Power Dissipation at T
CASE
= 25°C
(Measured in an infinite heat sink) ............................................... 125 mW
Derate linearly to zero at maximum operating temperature.
Diode Mounting Temperature in Packages
C2 ............................................................................. 235°C for 10 sec max.
Peak Inverse Voltage .................................................................................. 4 V
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
RF Electrical Specifications at T
A
= 25°C
Part
Number
5082-
2207
2209
2794
Test
Conditions
*Minimum batch size 20 units.
Test
Freq.
(GHz)
9.375
Maximum
Noise
Figure
NF (dB)
6.0
6.5
6.5
IF
Impedance
Z
IF
(Ω)
Min.
Max.
200
150
400
350
Maximum
SWR
1.5:1
2.0:1
2.0:1
V=0
Typical
Junction
Capacitance
C
j
(pF)
0.18
Barrier
Medium
Medium
Low
Package
Broadband C2
DC Load Resistance = 0
Ω
L.O. Power = 1 mW
IF = 30 MHz, 1.5 dB NF
Typical Detector Characteristics at T
A
= 25°C
Medium Barrier and Low Barrier (DC Bias)
Parameter
Tangential Sensitivity
Voltage Sensitivity
Video Resistance
Low Barrier (Zero Bias)
Parameter
Tangential Sensitivity
Voltage Sensitivity
Video Resistance
Symbol
T
SS
γ
R
V
Typical Value
-44
10
1.8
Units
dBm
mV/µW
ΜΩ
Test Conditions
Zero Bias, R
L
= 10 MΩ
P
in
= - 30 dBm
Video Bandwidth = 2 MHz
f = 10 GHz
Symbol
T
SS
γ
R
V
Typical Value
-54
6.6
1400
Units
dBm
mV/µW
Ω
Test Conditions
20
µA
Bias, R
L
= 100 KΩ
P
in
= - 40 dBm
Video Bandwidth = 2 MHz
f = 10 GHz
3
SPICE Parameters
Parameter
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
Ω
V
Units
V
pF
eV
A
A
5082-2207
5082-2209
5
0.20
0.69
10E - 5
3 x 10E - 10
1.08
5
0.65
2
0.5
5082-2794
5
0.20
0.69
10E - 5
4 x 10E - 8
1.08
6
0.5
2
0.5
Typical Parameters
100
FORWARD CURRENT (mA)
100
10
FORWARD CURRENT (mA)
+125°C
+25°C
-55°C
+125°C
+25°C
-55°C
10
1
1
0.1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
0.01
0
0.2
0.4
0.6
0.8
FORWARD VOLTAGE (V)
FORWARD VOLTAGE (V)
Figure 1. Typical Forward
Characteristics for Medium Barrier
Diodes.
Figure 2. Typical Forward
Characteristics for Low Barrier
Diodes.
4
Typical Parameters,
continued
1.0
1.0
5
0.
2.0
6
8
4
0.2
8
9
10
3.
0
4
0
5.
10
.0
0.2
3
3.
0
5
6
7
2.0
0.2
0.5
1.0
2.0
11
10.0
.0
10
5
5
2.0
Figure 3. Typical Admittance Characteristics, 5082-2207
with Self Bias.
1.0
Figure 4. Typical Admittance Characteristics, 5082-2207
with External Bias.
1.0
1.0
1.0
2.0
5
0.2
8
9
10
3.
0
4
3
0.2
0.5
1.0
2.0
5.
0
0.2
3.
0
6
7
2.0
2.0
0.
0.
3 mA
11
0.2
150
µA
10
11
12
0.
5
5
2.0
Figure 5. Typical Admittance Characteristics, 5082-2209
and 5082-2794 with Self Bias.
1.0
Figure 6. Typical Admittance Characteristics, 5082-2209
and 5082-2794 with External Bias.
1.0
2.0
0.
5.
0
3.
0
5.
0
12
GHz
3.
0
1
0.2
10.0
.0
10
3.0
0
10.0
0.
3.0
5.0
5.0
2
1
1.5
.0
10
20 50
0.2
3
2 GHz
0.5
4 5
6 7
8
1.0
2.0
5.
9
5.
0
3.
0
5.
0
0.2
12 GHz
0
12 GHz
0.2
10.0
.0
10
0.2
0.5
1.0
2.0
3.0
3.0
5.0
5.0
2
1 1.5
3 mA
3.
0.
5
0.
5
5.
0
2
20 50
150
µA
10
.0
10
0.
5
0
.0
10
5
Typical Parameters,
continued
50
Ω
PPO STRIPLINE
1/8 INCH GROUNDPLANE SPACING
7.5
DEVICE UNDER TEST
CATHODE GROUNDED
"A"
PPO
AIR
NOISE FIGURE (dB)
7.0
GROUND
10.0
(0.40)
6.5
6.0
4.1
(0.16)
PACKAGE
C2
5.5
1
3
5
7
9
11
13
15
H2
FREQUENCY (GHz)
DIMENSION
"A"
1.91
±
0.05
(0.075
±
0.002)
2.67
±
0.05
(0.105
±
0.002)
Figure 7. Typical Noise Figure vs. Frequency for
5082-2209, -2794.
Figure 8. Admittance Test Circuit.
MODEL FOR C2 DIODES
14.5 nH
67.0
Ω
0.318 (0.0125)
ε
EFF.
= 6.37
0.53 nH
C
J
R
J
67.0
Ω
0.318 (0.0125)
ε
EFF.
= 6.37
0.065 pF
DIMENSIONS IN MILLIMETERS (INCHES)
1 mA Rect. Current
Parameter
Junction Resistance
Junction Capacitance
Symbol
R
J
C
J
5082-2207
338
0.189
20
µA
Ext. Bias
5082-2207
421
0.195
Units
Ω
pF
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
