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HN58C256AP-85: 产品描述256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A); 产品类别存储存储; 文件大小130KB，共25页; 制造商Hitachi （Renesas ）; 官网地址http://www.renesas.com/eng/

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HN58C256AP-85概述

256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

HN58C256AP-85规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Hitachi （Renesas ）
零件包装代码	DIP
包装说明	DIP, DIP28,.6
针数	28
Reach Compliance Code	unknown
ECCN代码	EAR99
最长访问时间	85 ns
其他特性	100K ERASE/WRITE CYCLES; DATA RETENTION 10 YEARS; SOFTWARE DATA PROTECTION
命令用户界面	NO
数据轮询	YES
数据保留时间-最小值	10
耐久性	100000 Write/Erase Cycles
JESD-30 代码	R-PDIP-T28
长度	35.6 mm
内存密度	262144 bit
内存集成电路类型	EEPROM
内存宽度	8
功能数量	1
端子数量	28
字数	32768 words
字数代码	32000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	32KX8
封装主体材料	PLASTIC/EPOXY
封装代码	DIP
封装等效代码	DIP28,.6
封装形状	RECTANGULAR
封装形式	IN-LINE
页面大小	64 words
并行/串行	PARALLEL
电源	5 V
编程电压	5 V
认证状态	Not Qualified
座面最大高度	5.7 mm
最大待机电流	0.00002 A
最大压摆率	0.03 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	THROUGH-HOLE
端子节距	2.54 mm
端子位置	DUAL
切换位	YES
宽度	15.24 mm
最长写入周期时间 (tWC)	10 ms
Base Number Matches	1

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HN58C256A Series

HN58C257A Series

256k EEPROM (32-kword

8-bit)

Ready/Busy and

RES

function (HN58C257A)

ADE-203-410D (Z)

Rev. 4.0

Oct. 24, 1997

Description

The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as

32768-word

8-bit. They have realized high speed low power consumption and high reliability by

employing advanced MNOS memory technology and CMOS process and circuitry technology. They also

have a 64-byte page programming function to make their write operations faster.

Features

•

Single 5 V supply: 5 V ±10%

•

Access time: 85 ns/100 ns (max)

•

Power dissipation



Active: 20 mW/MHz, (typ)



Standby: 110 µW (max)

•

On-chip latches: address, data,

CE, OE, WE

•

Automatic byte write: 10 ms max

•

Automatic page write (64 bytes): 10 ms max

•

Ready/Busy (only the HN58C257A series)

•

Data

polling and Toggle bit

•

Data protection circuit on power on/off

•

Conforms to JEDEC byte-wide standard

•

Reliable CMOS with MNOS cell technology

•

erase/write cycles (in page mode)

•

10 years data retention

•

Software data protection

•

Write protection by

RES

pin (only the HN58C257A series)

•

Industrial versions (Temperatur range: – 20 to 85˚C and – 40 to 85˚C) are also available.

HN58C256AP-85相似产品对比

	HN58C256AP-85	HN58C256AFP-10	HN58C256AFP-85	HN58C256AP-10	HN58C256AT-85	HN58C257AT-10	HN58C256A	HN58C256AT-10	HN58C257AT-85
描述	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	-	不符合	不符合
厂商名称	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	-	Hitachi （Renesas ）	Hitachi （Renesas ）
零件包装代码	DIP	SOIC	SOIC	DIP	TSOP	TSOP	-	TSOP	TSOP
包装说明	DIP, DIP28,.6	SOP, SOP28,.45	SOP, SOP28,.45	DIP, DIP28,.6	TSOP1, TSSOP28,.53,22	TSOP1, TSSOP32,.56,20	-	TSOP1, TSSOP28,.53,22	TSOP1, TSSOP32,.56,20
针数	28	28	28	28	28	32	-	28	32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknow	-	unknown	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99
最长访问时间	85 ns	100 ns	85 ns	100 ns	85 ns	100 ns	-	100 ns	85 ns
其他特性	100K ERASE/WRITE CYCLES; DATA RETENTION 10 YEARS; SOFTWARE DATA PROTECTION	100K ERASE/WRITE CYCLES; DATA RETENTION 10 YEARS; SOFTWARE DATA PROTECTION	100K ERASE/WRITE CYCLES; DATA RETENTION 10 YEARS; SOFTWARE DATA PROTECTION	100K ERASE/WRITE CYCLES; DATA RETENTION 10 YEARS; SOFTWARE DATA PROTECTION	100K ERASE/WRITE CYCLES; DATA RETENTION 10 YEARS; SOFTWARE DATA PROTECTION	100K ERASE/WRITE CYCLES; DATA RETENTION 10 YEARS; SOFTWARE DATA PROTECTION	-	100K ERASE/WRITE CYCLES; DATA RETENTION 10 YEARS; SOFTWARE DATA PROTECTION	100K ERASE/WRITE CYCLES; DATA RETENTION 10 YEARS; SOFTWARE DATA PROTECTION
命令用户界面	NO	NO	NO	NO	NO	NO	-	NO	NO
数据轮询	YES	YES	YES	YES	YES	YES	-	YES	YES
数据保留时间-最小值	10	10	10	10	10	10	-	10	10
耐久性	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	-	-	100000 Write/Erase Cycles	-
JESD-30 代码	R-PDIP-T28	R-PDSO-G28	R-PDSO-G28	R-PDIP-T28	R-PDSO-G28	R-PDSO-G32	-	R-PDSO-G28	R-PDSO-G32
长度	35.6 mm	18.3 mm	18.3 mm	35.6 mm	11.8 mm	12.4 mm	-	11.8 mm	12.4 mm
内存密度	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bi	-	262144 bit	262144 bi
内存集成电路类型	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	-	EEPROM	EEPROM
内存宽度	8	8	8	8	8	8	-	8	8
功能数量	1	1	1	1	1	1	-	1	1
端子数量	28	28	28	28	28	32	-	28	32
字数	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	-	32768 words	32768 words
字数代码	32000	32000	32000	32000	32000	32000	-	32000	32000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	-	70 °C	70 °C
组织	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	-	32KX8	32KX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	DIP	SOP	SOP	DIP	TSOP1	TSOP1	-	TSOP1	TSOP1
封装等效代码	DIP28,.6	SOP28,.45	SOP28,.45	DIP28,.6	TSSOP28,.53,22	TSSOP32,.56,20	-	TSSOP28,.53,22	TSSOP32,.56,20
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
页面大小	64 words	64 words	64 words	64 words	64 words	64 words	-	64 words	64 words
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL
电源	5 V	5 V	5 V	5 V	5 V	5 V	-	5 V	5 V
编程电压	5 V	5 V	5 V	5 V	5 V	5 V	-	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
座面最大高度	5.7 mm	2.5 mm	2.5 mm	5.7 mm	1.2 mm	1.2 mm	-	1.2 mm	1.2 mm
最大待机电流	0.00002 A	0.00002 A	0.00002 A	0.00002 A	0.00002 A	0.00002 A	-	0.00002 A	0.00002 A
最大压摆率	0.03 mA	0.03 mA	0.03 mA	0.03 mA	0.03 mA	0.03 mA	-	0.03 mA	0.03 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	-	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	-	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	-	5 V	5 V
表面贴装	NO	YES	YES	NO	YES	YES	-	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	-	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	-	COMMERCIAL	COMMERCIAL
端子形式	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	-	GULL WING	GULL WING
端子节距	2.54 mm	1.27 mm	1.27 mm	2.54 mm	0.55 mm	0.5 mm	-	0.55 mm	0.5 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	-	DUAL	DUAL
切换位	YES	YES	YES	YES	YES	YES	-	YES	YES
宽度	15.24 mm	8.4 mm	8.4 mm	15.24 mm	8 mm	8 mm	-	8 mm	8 mm
最长写入周期时间 (tWC)	10 ms	10 ms	10 ms	10 ms	10 ms	10 ms	-	10 ms	10 ms
Base Number Matches	1	1	1	1	1	-	-	1	-

HN58C256AP-85

HN58C256AP-85概述

HN58C256AP-85规格参数

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HN58C256AP-85相似产品对比

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