TAK CHEONG
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
Licensed by
ON Semiconductor
,
A trademark of
semiconductor
Components Industries, LLC for
Zener Technology
and
Products
.
Maximum Ratings
(Note 1)
Rating
Maximum Steady State Power Dissipation
@TL≤75℃,
Lead Length = 3/8”
Derate Above 75℃
Operating and Storage
Temperature Range
Symbol
P
D
Value
500
4.0
T
J
, T
stg
-65 to +200
Units
mW
mW/℃
°C
AXIAL LEAD
DO35
Note 1: Some part number series have lower JEDEC registered ratings.
Specification Features:
Zener Voltage Range = 1.8V to 43V
ESD Rating of Clas 3 (>6 KV) per Human Body Model
DO-35 Package (DO-204AH)
Double Slug Type Construction
Metallurgical Bonded Construction
Cathode
Anode
Specification Features:
Case
:
Double slug type, hermetically sealed glass
Finish
:
All external surfaces are corrosion resistant and leads are readily solderable
Polarity :
Cathode indicated by polarity band
Mounting:
Any
Maximum Lead Temperature for Soldering Purposes
230℃, 1/16” from the case for 10 seconds
L
4xxx
L
4x
xx
= Logo
= 1N4xxx Device Code
Ordering Information
Device
1N4xxx
1N4xxxRL
1N4xxxRL2*
1N4xxxRR1 !
1N4xxxRR2 i
1N4xxxTA
1N4xxxTA2*
1N4xxxRA1 !
1N4xxxRA2 i
Package
Axial Lead
Axial Lead
Axial Lead
Lead Form
Lead Form
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Quantity
3000 Units / Box
5000 Units / Tape & Reel
5000 Units / Tape & Reel
3000 Units / Radial Tape & Reel
3000 Units / Radial Tape & Reel
5000 Units / Tape & Ammo
5000 Units / Tape & Ammo
3000 Units / Radial Tape & Ammo
3000 Units / Radial Tape & Ammo
* The “2” suffix refer to 26mm tape spacing.
! “1”: Polarity band
up
with cathode lead off first.
i “2”: Polarity band
down
with cathode lead off first.
Devices listed in
bold italic
are Tak Cheong
Preferred
devices.
Preferred
devices are recommended choices
for future use and best overall value.
December 2005 / B
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1
1N4678 through 1N4717 Series
®
1N4768 through 1N4717
Low level oxide passivated zener diodes for
applications requiring extremely low operating currents, low
leadage, and sharp breakdown,
ELECTRICAL CHARACTERIZATION
(T
A
= (25°C unless
otherwise noted, V
F
= 1.5V max @ I
F
= 100mA for all types)
Symbol
V
Z
I
ZT
∆V
Z
I
R
V
R
I
F
V
F
I
ZM
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Zener Current
Reverse Zener Voltage Change
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
Maximum DC Zener Current
ELECTRICAL CHARACTERIZATION
(T
A
= (25°C unless otherwise noted, V
F
= 1.5V max @ I
F
= 100mA for all types)
Zener Voltage
Device
(Note 2.)
Leakage Current
(Note 4.)
Device
Marking
Min
(Note 3.)
I
ZM
(Note 5.)
∆V
Z
(Note 6.)
VZ (Volts)
Nom
1.8
2
2.2
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
Max
1.89
2.1
2.31
2.52
2.835
3.15
3.465
3.78
4.095
4.515
4.935
5.355
5.88
6.51
7.14
@ I
ZT
(uA)
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
I
R
@ V
R
(uA Max)
7.5
5
4
2
1
0.8
7.5
7.5
5
4
10
10
10
10
10
(Volts)
1
1
1
1
1
1
1.5
2
2
2
3
3
4
5
5.1
(mA)
120
110
100
95
90
85
80
75
70
65
60
55
50
45
35
(Volts)
0.7
0.7
0.75
0.8
0.85
0.9
0.95
0.95
0.97
0.99
0.99
0.97
0.96
0.95
0.9
1N4678
1N4679
1N4680
1N4681
1N4682
1N4683
1N4684
1N4685
1N4686
1N4687
1N4688
1N4689
1N4690
1N4691
1N4692
1N4678
1N4679
1N4680
1N4681
1N4682
1N4683
1N4684
1N4685
1N4686
1N4687
1N4688
1N4689
1N4690
1N4691
1N4692
1.71
1.9
2.09
2.28
2.565
2.85
3.135
3.42
3.705
4.085
4.465
4.845
5.32
5.89
6.46
2. TOLERANCE AND TYPE NUMBER DESIGNATION (V
Z
)
The type numbers listed have a standard tolerance on the nominal zener voltage of
±5%.
3. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (T
L
) at 30°C
±
1°C and 3/8” lead length.
4. REVERSE LEAKAGE CURREN (I
R
)
Reverse leakage currents are guaranteed and measured at V
R
shown on the table.
5. MAXIMUM ZENER CURRENT RATINGS (I
ZM
)
Maximum zener current ratings are based on maximum zener voltage of the individual units and JEDEC 250 mW rating.
6. MAXIMUM VOLTAGE CHANGE (∆V
Z
)
Voltage change is equal to the difference between V
Z
at 100uA and at 10uA.
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2
1N4678 through 1N4717 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25ºC unless otherwise noted, V
F
= 1.5 V Max @ I
F
= 100mA for all types)
Zener Voltage
(Note 8.)
Leakage Current
(Note 9.)
I
ZM
(Note 10.)
∆
V
Z
(Note 11.)
Device
(Note 7.)
Device
Marking
1N4693
1N4694
1N4695
1N4696
1N4697
1N4698
1N4699
1N4700
1N4701
1N4702
1N4703
1N4704
1N4705
1N4706
1N4707
1N4708
1N4709
1N4710
1N4711
1N4712
1N4713
1N4714
1N4715
1N4716
1N4717
V
Z
(Volts)
Min
7.125
7.79
8.265
8.645
9.5
10.45
11.4
12.35
13.3
14.25
15.2
16.15
17.1
18.05
19
20.9
22.8
23.75
25.65
26.6
28.5
31.35
34.2
37.05
40.85
Nom
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
Max
7.875
8.61
9.135
9.555
10.5
11.55
12.6
13.65
14.7
15.75
16.8
17.85
18.9
19.95
21
23.1
25.2
26.25
28.35
29.4
31.5
34.65
37.8
40.95
45.15
@ I
ZT
µ
(µA)
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
I
R
@ V
R
(µA Max)
µ
10
1
1
1
1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
(Volts)
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.8
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19
20.4
21.2
22.8
25
27.3
29.6
32.6
(mA)
31.8
29
27.4
26.2
24.8
21.6
20.4
19
17.5
16.3
15.4
14.5
13.2
12.5
11.9
10.8
9.9
9.5
8.8
8.5
7.9
7.2
6.6
6.1
5.5
(Volts)
0.75
0.5
0.1
0.08
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
0.22
0.24
0.25
0.27
0.28
0.3
0.33
0.36
0.39
0.43
1N4693
1N4694
1N4695
1N4696
1N4697
1N4698
1N4699
1N4700
1N4701
1N4702
1N4703
1N4704
1N4705
1N4706
1N4707
1N4708
1N4709
1N4710
1N4711
1N4712
1N4713
1N4714
1N4715
1N4716
1N4717
7. TOLERANCE AND TYPE NUMBER DESIGNATION (V
Z
)
The type numbers listed have a standard tolerance on the nominal zener voltage of
±5%.
8. ZENER VOLTAGE (V
Z
) MEASUREMENT
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (T
L
) at 30°C
±1°C
and 3/8” lead length.
9. REVERSE LEAKAGE CURRENT (I
R
)
Reverse leakage currents are guaranteed and measured at V
R
shown on the table.
10. MAXIMUM ZENER CURRENT RATINGS (I
ZM
)
Maximum zener current ratings are based on maximum zener voltage of the individual units and JEDEC 250 mW rating.
11. MAXIMUM VOLTAGE CHANGE (∆V
Z
)
∆
Voltage change is equal to the difference between VZ at 100µA and at 10µA.
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3
1N4678 through 1N4717 Series
0.7
HEAT
SINKS
0.6
P D , MAXIMUM STEADY STATE
POWER DISSIPATION (WATTS)
0.5
0.4
3/8"
3/8"
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
180
200
T L , LEAD TEMPERATURE (°C)
Figure 1. Steady State Power Derating
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4
1N4678 through 1N4717 Series
APPLICATION NOTE - ZENER VOLTAGE
θ
JL, JUNCTION TO LEAD THERMAL RESISTANCE (
°
C/W)
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
θ
LA
P
D
+ T
A
.
500
400
L
300
L
2.4-60 V
200
θ
LA
is the lead-to-ambient thermal resistance (°C/W) and P
D
is the power dissipation. The value for
θ
LA
will vary and
depends on the device mounting method.
θ
LA
is generally 30
to 40°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of T
L
, the junction temperature
may be determined by:
T
J
= T
L
+
∆T
JL
.
62-200 V
100
0
0
0.2
0.4
0.6
0.8
1
L , LEAD LENGTH TO HEAT SINK (INCH)
Figure 2. Typical Thermal Resistance
1000
7000
5000
2000
1000
700
500
200
100
70
50
I R , LEAKAGE CURRENT (
µ
A)
20
10
7
5
2
1
0.7
0.5
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
∆T
JL
is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
∆T
JL
=
θ
JL
P
D
.
For worst-case design, using expected limits of I
Z
, limits
of P
D
and the extremes of T
J
(∆T
J
) may be estimated.
Changes in voltage, V
Z
, can then be found from:
∆V
=
θ
VZ
T
J
.
θ
VZ
, the zener voltage temperature coefficient, is found
from Figures 4 and 5.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 7. They are lower
than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 7 be exceeded.
+125°C
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
3
4
5
6
7
8
9
10
11
12
13
VZ , NOMINAL ZENER VOLTAGE (VOLTS)
14
15
+25°C
Figure 3. Typical Leakage Current
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5
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