Preliminary
SemiWell
Semiconductor
Bi-Directional Triode Thyristor
Symbol
BT134-F
Features
◆
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 4 A )
◆
High Commutation dv/dt
○
2.T2
▼
▲
○
3.Gate
1.T1
○
General Description
This device is suitable for low power AC switching applica-
tion, phase control application such as fan speed and tem-
perature modulation control, lighting control and static
switching relay.
TO-126
3
2
1
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
( T
J
= 25°C unless otherwise specified )
Condition
Ratings
600
T
C
= 104 °C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
t = 10ms
4
25/27
3.1
5
Over any 20ms period
0.5
2
5
- 40 ~ 125
- 40 ~ 150
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Units
V
A
A
A
2
s
W
W
A
V
°C
°C
Nov, 2003. Rev. 0
½½½½：／／½½½．½½½．½½½．½½
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/6
BT134-F
Electrical Characteristics
Symbol
Items
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Gate Trigger Current
I
-
GT3
Conditions
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125 °C
I
T
= 5 A, Inst. Measurement
Ratings
Min.
─
─
─
─
Typ.
─
─
─
─
─
─
─
─
─
─
─
─
5
─
Max.
0.5
1.7
25
25
Unit
I
DRM
V
TM
I
+GT1
I
-GT1
mA
V
V
D
= 6 V, R
L
=10
Ω
─
─
─
─
25
70
1.5
1.5
mA
Ⅲ
Ⅳ
Ⅰ
Ⅱ
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
Ω
Ⅲ
Ⅳ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Junction to case
T
J
= 125 °C, V
D
= 1/2 V
DRM
T
J
= 125 °C, [di/dt]c = -0.75 A/ms,
V
D
=2/3 V
DRM
I
+GT3
V
+GT1
V
-GT1
V
GT3
V
+GT3
V
GD
(dv/dt)c
I
H
R
th(j-c)
-
V
─
─
0.2
5.0
─
─
1.5
2.5
─
─
─
3.5
V
V/㎲
mA
°C/W
2/6
½½½½：／／½½½．½½½．½½½．½½
BT134-F
Fig 1. Gate Characteristics
10
1
Fig 2. On-State Voltage
10
2
V
GK
= 5V
P
GK
= 5W
On-State Current [A]
P
G(AV)
= 0.5W
Gate Voltage [V]
10
1
25
℃
I
GM
=2A
10
0
125 C
10
0
o
25 C
o
V
GD
= 0.2V
10
-1
10
1
-1
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
7
6
130
Fig 4. On State Current vs.
Allowable Case Temperature
π
θ
Power Dissipation [W]
θ
= 150
o
o
5
360°
θ
= 120
θ
= 90
θ
= 60
θ
= 30
o
o
θ
2
π
θ
= 180
o
Allowable Case Temperature [ C]
120
4
3
2
1
0
0
θ
: Conduction Angle
o
o
π
110
θ
2
π
θ
= 30
θ
= 60
θ
= 90
o
o
θ
360°
o
o
o
θ
= 120
θ
100
0
: Conduction Angle
θ
= 150
o
θ
= 180
1
2
3
4
5
1
2
3
4
5
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
35
10
30
Surge On-State Current [A]
25
60Hz
o
20
V
GT
(25 C)
V
GT
(t C)
o
1
15
50Hz
10
5
0
0
10
10
1
10
2
10
3
0.1
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
½½½½：／／½½½．½½½．½½½．½½
3/6
BT134-F
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
10
10
1
I
GT
(25 C)
I
I
1
+
GT1
-
GT1
-
GT3
Transient Thermal Impedance [ C/W]
I
GT
(t C)
o
o
o
I
10
0
I
+
GT3
0.1
-50
10
0
50
100
o
-1
150
10
-3
10
-2
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
10Ω
10Ω
▼
▲
6V
●
▼
▲
A
●
▼
▲
A
●
6V
6V
A
▼
▲
R
G
6V
●
A
V
●
R
G
V
●
R
G
V
●
V
●
R
G
Test Procedure
Ⅰ
Test Procedure
Ⅱ
Test Procedure
Ⅲ
Test Procedure
Ⅳ
4/6
½½½½：／／½½½．½½½．½½½．½½
BT134-F
TO-126 Package Dimension
mm
Min.
7.5
10.8
14.2
2.7
3.8
2.5
1.2
2.3
4.6
0.48
0.7
1.4
3.2
0.62
0.86
0.019
0.028
0.055
0.126
1.5
0.047
0.091
0.181
0.024
0.034
Typ.
Max.
7.9
11.2
14.7
2.9
Min.
0.295
0.425
0.559
0.106
0.150
0.098
0.059
Inch
Typ.
Max.
0.311
0.441
0.579
0.114
Dim.
A
B
C
D
E
F
G
H
I
J
K
L
φ
A
E
B
D
φ
F
3
C
2
1
G
L
1. Gate
2. T2
3. T1
J
K
H
I
½½½½：／／½½½．½½½．½½½．½½
5/6
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