Features
•
Operating Voltage: 5V
•
Access Time: 30, 45 ns
•
Very Low Power Consumption
•
•
•
•
•
•
•
•
–
Active: 600 mW (Max)
–
Standby: 1 µW (Typ)
Wide Temperature Range: -55⋅C to +125⋅C
400 Mils Width Packages: FP32 and SB32
TTL Compatible Inputs and Outputs
Asynchronous
No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm
2
Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019
QML Q and V with SMD 5962-89598
ESCC with Specification 9301/047
Description
The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an
extremely low standby supply current (Typical value = 0.2 µA) with a fast access time
at 30 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The M65608E is processed according to the methods of the latest revision of the MIL
PRF 38535 or ESCC 9000.
Rad. Tolerant
128Kx8, 5-Volt
Very Low Power
CMOS SRAM
M65608E
Block Diagram
Pin
Configuration
32-lead DIL side-brazed
32-lead Flatpack
400 MILS
400 MILS
2
M65608E
4151N–AERO–04/09
M65608E
Pin Description
Table 1.
Pin Names
Names
A0 - A16
I/O0 - I/O7
CS1
CS2
WE
OE
VCC
GND
Description
Address inputs
Data Input/Output
Chip select 1
Chip select 2
Write Enable
Output Enable
Power
Ground
Table 2.
Truth Table
CS1
H
CS2
X
W
X
OE
X
Inputs/
Outputs
Z
Mode
Deselect/
Power-down
Deselect/
power-down
Read
Write
Output
Disable
X
L
L
L
Note:
L
H
H
H
X
H
L
H
X
L
X
H
Z
Data Out
Data In
Z
L = low, H = high, X = H or L, Z = high impedance.
3
4151N–AERO–04/09
Electrical Characteristics
Absolute Maximum Ratings
Supply voltage to GND potential: ........................ -0.5V + 7.0V
Voltage range on any input: ............ GND - 0.5V to VCC + 0.5
Voltage range on any ouput: ........... GND - 0.5V to VCC + 0.5
Storage temperature: ..................................... -65⋅C to +150⋅C
Output Current from Output Pins: ................................ 20 mA
Electrostatic Discharge Voltage: ............................... > 2000V
(MIL STD 883D method 3015.3)
*NOTE:
Stresses beyond those listed under "Abso-
lute Maximum Ratings” may cause perma-
nent damage to the device. This is a stress
rating only and functional operation of the
device at these or any other conditions
beyond those indicated in the operational
sections of this specification is not implied.
Exposure between recommended DC
operating and absolute maximum rating
conditions for extended periods may
affect device reliability.
Military Operating
Range
Operating Voltage
5V + 10%
Operating Temperature
-55
⋅
C to + 125
⋅
C
Recommended DC
Operating Conditions
Parameter
Description
Minimum
4.5
0.0
GND - 0.5
2.2
Typical
5.0
0.0
0.0
–
Maximum
5.5
0.0
0.8
VCC + 0.5
Unit
V
V
V
V
V
CC
GND
V
IL
V
IH
Capacitance
Parameter
Supply voltage
Ground
Input low voltage
Input high voltage
Description
Minimum
–
–
Typical
–
–
Maximum
8
8
Unit
pF
pF
Cin
(1)
Cout
(1)
Note:
Input low voltage
Output high
voltage
1. Guaranteed but not tested.
4
M65608E
4151N–AERO–04/09
M65608E
DC Parameters
DC Test Conditions
Table 3.
DC Test Conditions
TA = -55°C to + 125°C; Vss = 0V; V
CC
= 4.5V to 5.5V
Symbol
Description
Minimum
-1
-1
–
2.4
Typical
–
–
–
–
Maximum
1
1
0.4
–
Unit
µA
µA
V
V
IIX
(1)
IOZ
(1)
VOL
(2)
VOH
(3)
1.
2.
3.
Input leakage
current
Output leakage
current
Output low voltage
Output high
voltage
V
CC
min. IOL = 8 mA
V
CC
min. IOH = -4 mA.
GND < Vin <
V
CC
, GND < Vout <
V
CC
Output Disabled.
Consumption
Symbol
Description
65608E-30
2
300
110
65608E-45
2
300
100
Unit
mA
µA
mA
Value
max
max
max
ICCSB
(1)
ICCSB1
(2)
ICCOP
(3)
1.
2.
3.
Standby supply
current
Standby supply
current
Dynamic operating
current
CS1 >
V
IH
or CS2 <
V
IL
and CS1 <
V
IL
.
CS1 >
V
CC
- 0.3V or, CS2 < GND + 0.3V and CS1 < 0.2V.
F = 1/TAVAV, Iout = 0 mA, W = OE =
V
IH
, Vin = GND or
V
CC
,
V
CC
max.
5
4151N–AERO–04/09
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