SEMICONDUCTOR TECHNICAL DATA
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by 2N6439/D
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large–signal output amplifier stages in the
225 to 400 MHz frequency range.
•
Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
Output Power = 60 Watts over 225 to 400 MHz Band
Minimum Gain = 7.8 dB @ 400 MHz
•
Built–In Matching Network for Broadband Operation Using Double
Match Technique
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
•
Gold Metallization System for High Reliability Applications
2N6439
60 W, 225 to 400 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
MAXIMUM RATINGS*
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ T
C
= 25°C (1)
Derate above 25°C
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
P
D
T
stg
Value
33
60
4.0
146
0.83
–65 to +200
Unit
Vdc
Vdc
Vdc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
1.2
Unit
°C/W
ELECTRICAL CHARACTERISTICS*
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 50 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= 50 mAdc, V
BE
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 5.0 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
33
60
4.0
—
—
—
—
—
—
—
—
2.0
Vdc
Vdc
Vdc
mAdc
NOTE:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
* Indicates JEDEC Registered Data.
1
ELECTRICAL CHARACTERISTICS* — continued
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
h
FE
10
—
100
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 28 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
—
67
75
pF
BROADBAND FUNCTIONAL TESTS
(Figure 6)
Common–Emitter Amplifier Power Gain
(V
CC
= 28 Vdc, P
out
= 60 W, f = 225–400 MHz)
Electrical Ruggedness
(P
out
= 60 W, V
CC
= 28 Vdc, f = 400 MHz, VSWR 30:1
all phase angles)
G
PE
ψ
No Degradation in Output Power
7.8
8.5
—
dB
—
NARROW BAND FUNCTIONAL TESTS
(Figure 1)
Common–Emitter Amplifier Power Gain
(V
CC
= 28 Vdc, P
out
= 60 W, f = 400 MHz)
Collector Efficiency
(V
CC
= 28 Vdc, P
out
= 60 W, f = 400 MHz)
* Indicates JEDEC Registered Data.
G
PE
η
7.8
55
10
—
—
—
dB
%
C8
C5
C1
L1
C7
C11
C2
L3
C6
L5
DUT
L2
C4
C3
R1
C1
to
C4, C11 — 4.0–40 pF
C5
to
C8 — 33 pF
C9 — 1000 pF
C10 — 5.0
µF
R1 — 15
Ω
L1, L2 — 3/16″ x 1″ Copper Strap
L3 — 1.5
µH
L4 — 10
µH
L5 — 1 Turn #16 AWG, 5/16″ I.D.
L4
C9
C10
V
CC
= 28 V
Figure 1. 400 MHz Test Amplifier (Narrow Band)
2
NARROW BAND DATA
100
Pout , OUTPUT POWER (WATTS)
80
60
40
20
0
200
V
CC
= 28 V
P
in
= 8 W
6W
4W
120
Pout , OUTPUT POWER (WATTS)
100
80
60
40
20
V
CC
= 28 V
f = 225 MHz
400 MHz
2W
250
300
350
f, FREQUENCY (MHz)
400
450
0
2
4
6
8
10
12
14
P
in
, INPUT POWER (WATTS)
16
18
20
Figure 2. P
out
versus Frequency
Figure 3. Output Power versus Input Power
12
G PE , COMMON EMITTER AMPLIFIER
POWER GAIN (dB)
P
out
= 60 W
V
CC
= 28 V
100
Pout , OUTPUT POWER (WATTS)
f = 400 MHz
80
P
in
= 6 W
60
40
20
0
10
4W
11
10
9
8
200
250
300
350
f, FREQUENCY (MHz)
400
450
14
18
22
V
CC
, SUPPLY VOLTAGE (VOLTS)
26
30
Figure 4. Power Gain versus Frequency
Figure 5. Output Power versus Supply Voltage
100
Pout , OUTPUT POWER (WATTS)
f = 225 MHz
80
P
in
= 8 W
60
4W
40
20
0
10
14
18
22
V
CC
, SUPPLY VOLTAGE (VOLTS)
26
30
Figure 6. Output Power versus Supply Voltage
3
R1
B
C13
+
L1
L2
DUT
50
Ω
LINE
T1
C1
L4
0.8″
C3
C4
C5
C6
C7
A
L5
0.5″
C8
C11
4:1
-
RFC1
C14
C16
C15
V
CC
C12
T2
50
Ω
LINE
4:1
C2
C9 C10
A
L3
R2
C17
C1 — 68 pF
C2, C4, C8, C10 — 27 pF
C3, C5, C11 — 10 pF
C6, C7 — 51 pF
C9 — 1.0–10 pF JOHANSON
C12 — 100 pF
C13, C15 — 680 pF
C14, C16 — 1.0
µF,
35 V Tantalum
C17 — 0.1
µF,
ERIE Red Cap
RFC1 — Ferrite Bead Choke, Feroxcube VK200 19/4B
B — Ferroxcube 56-590-65/4B Ferrite Bead
T1, T2 — 25 Ohms (UT25) Miniature Coaxial Cable, 1 turn
R1 — 11
Ω,
1.0 W
R2 — 20
Ω,
1/4 W
L1 — 10 Turns, #22 AWG, 1/8″ I.D.
L2 — 4 Turns, #16 AWG, 1/4″ I.D.
L3 — 6 Turns, #24 AWG, 1/8″ I.D.
L4, L5 — 1″ x 0.25″ Microstrip Line
Board Material 0.031″ Thick Teflon-Fiberglass
Figure 7. 225 to 400 MHz Broadband Test Circuit Schematic
BROADBAND DATA (Circuit, Figure 7)
10
8
6
4
2
0
EFFICIENCY (%)
P
out
= 60 W
V
CC
= 28 V
100
80
60
40
P
out
= 60 W
V
CC
= 28 V
G PE , POWER GAIN (dB)
20
0
200
250
300
350
f, FREQUENCY (MHz)
400
200
250
300
350
f, FREQUENCY (MHz)
400
Figure 8. Power Gain versus Frequency
Figure 9. Efficiency versus Frequency
4
6
5
INPUT VSWR
4
.3
P
out
= 60 W
V
CC
= 28 V
0.1
0.2
400
Z
OL
*
450
450
f = 225 MHz
0.1
Z
in
275
P
out
= 60 W, V
CC
= 28 V
350
3
2
1
200
250
300
350
f, FREQUENCY (MHz)
400
275 350 400
FREQUENCY
MHz
Z
OL
* = Conjugate of the optimum load
225
Z
OL
* =
impedance into which the device
275
Z
OL
* =
output operates at a given output
350
Z
OL
* =
power, voltage and frequency.
400
450
f = 225 MHz
Z
in
OHMS
0.7 + j1.6
0.9 + j2.2
2.2 + j2.1
1.2 + j0.6
0.5 + j1.6
Z
OL
*
OHMS
2.2 - j1.8
2.1 - j0.9
2.1 - j0.1
2.0 + j0.2
1.9 + j0.9
Figure 10. Input VSWR versus Frequency
Figure 11. Series Equivalent Input-Output Impedance
5
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