SEMICONDUCTOR TECHNICAL DATA
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by MRF327/D
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large–signal output amplifier stages in the
100 to 500 MHz frequency range.
•
Guaranteed Performance @ 400 MHz, 28 Vdc
Output Power = 80 Watts over 225 to 400 MHz Band
Minimum Gain = 7.3 dB @ 400 MHz
•
Built–In Matching Network for Broadband Operation Using Double Match
Technique
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
•
Gold Metallization System for High Reliability Applications
•
Characterized for 100
to
500 MHz
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current
— Peak
Total Device Dissipation @ T
C
= 25°C (1)
Derate above 25°C
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
stg
Value
33
60
4.0
9.0
12
250
1.43
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
MRF327
80 W, 100 to 500 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 80 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= 80 mAdc, V
BE
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 8.0 mAdc, I
C
= 0)
Collector–Base Breakdown Voltage
(I
C
= 80 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
V
(BR)CBO
I
CBO
33
60
4.0
60
—
—
—
—
—
—
—
—
—
—
5.0
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (I
C
= 4.0 Adc, V
CE
= 5.0 Vdc)
h
FE
20
—
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 28 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
—
95
125
pF
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 1
1
ELECTRICAL CHARACTERISTICS – continued
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(Figure 1)
Common–Emitter Amplifier Power Gain
(V
CC
= 28 Vdc, P
out
= 80 W, f = 400 MHz)
Collector Efficiency
(V
CC
= 28 Vdc, P
out
= 80 W, f = 400 MHz)
Load Mismatch
(V
CC
= 28 Vdc, P
out
= 80 W, f = 400 MHz,
VSWR = 30:1 All Phase Angles)
G
PE
η
ψ
No Degradation in Output Power
7.3
50
9.0
60
—
—
dB
%
R2
L3
C12
L2
C13
+
-
C14
C15
+
-
V
CC
28 Vdc
L4
L5
R1
C11
Z2
Z3
C10
RF
OUTPUT
RF
INPUT
Z1
L1
DUT
C5
C1
C2
C3
C4
C6
C7
C8
C9
C1, C2, C7, C8, C9 — 1.0–20 pF Piston Trimmer (Johanson JMC 5501)
C3, C4 — 36 pF ATC 100 mil Chip Capacitor
C5, C6 — 43 pF ATC 100 mil Chip Capacitor
C10 — 100 pF UNELCO
C11, C15 — 0.1
µF
Erie Redcap
C12, C13 — 680 pF Feedthru
C14 — 1.0
µF
50 V Tantalum
L1 — 4 Turns #22 AWG Enameled, 3/16″ ID Closewound with Ferroxcube
L1 —
Bead (#56–590–65/4B) on Ground End of Coil
L2 — Ferroxcube VK200–19/4B Ferrite Choke
L3 — 7 Turns #18 AWG, 11/16″ Long, Wound on a 100 kΩ 2.0 Watt Resistor
L4 — 6 Turns #20 AWG Enameled, 3/16″ ID Closewound
L5 — 4 Turns #22 AWG Enameled, 1/8″ ID Closewound
Z1 — Microstrip 0.2″ W x 1.5″ L
Z2 — Microstrip 0.17″ W x 1.16″ L
Z3 — Microstrip 0.17″ W x 0.63″ L
R1, R2 — 10
Ω
2.0 Watt
Board — Glass Teflon
ε
r
= 2.56, t = 0.062″
Input/Output Connectors Type N
DUT Socket Lead Frame Etched from 80–mil–Thick Copper
Figure 1. 400 MHz Test Circuit
REV 1
2
15
13
11
9
7
5
Pout , OUTPUT POWER (WATTS)
P
out
= 80 W
V
CC
= 28 V
120
100
80
60
40
V
CC
= 28 V
100
200
300
f, FREQUENCY (MHz)
400
500
20
100
200
300
f, FREQUENCY (MHz)
400
500
P
in
= 15 W
G PE , POWER GAIN (dB)
10 W
7.5 W
5W
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Frequency
100
Pout , OUTPUT POWER (WATTS)
80
60
40
20
P
in
= 12 W
Pout , OUTPUT POWER (WATTS)
9W
6W
100
P
in
= 15 W
80
60
40
20
f = 400 MHz
30
0
10
14
18
22
26
30
10 W
6W
f = 225 MHz
0
10
14
18
22
26
V
CC
, SUPPLY VOLTAGE (VOLTS)
V
CC
, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
120
Pout , OUTPUT POWER (WATTS)
100
80
60
40
20
f = 100 MHz
225 MHz
400 MHz
500 MHz
V
CC
= 28 V
0
5
10
P
in
, INPUT POWER (WATTS)
15
20
Figure 6. Output Power versus Input Power
REV 1
3
-5
-10
f = 100 MHz
f = 100 MHz
225
Z
OL
*
5
225 Z
in
450
400 500
450
500
400
5
10
10
P
out
= 80 W, V
CC
= 28 V
f
MHz
100
225
400
450
500
Z
in
Ohms
0.33 + j0.26
0.56 + j1.64
1.3 + j3.29
1.58 + j2.53
0.82 + j2.9
Z
OL
*
Ohms
2.23 - j3.3
2.15 - j0.66
1.27 + j1.0
1.27 + j1.54
1.3 + j2.35
15
20
25
Z
OL
* = Conjugate of the optimum load impedance into which the device output operates at a given output power,
Z
OL
* =
voltage and frequency.
Figure 7. Series Equivalent Input–Output Impedance
REV 1
4
PACKAGE DIMENSIONS
D
R
F
4
3
NOTES:
1. FLANGE IS ISOLATED IN ALL STYLES.
DIM
A
B
C
D
E
F
H
J
K
L
N
Q
R
U
STYLE 1:
PIN 1.
2.
3.
4.
INCHES
MIN
MAX
24.38
25.14
12.45
12.95
5.97
7.62
5.33
5.58
2.16
3.04
5.08
5.33
18.29
18.54
0.10
0.15
10.29
11.17
3.81
4.06
3.81
4.31
2.92
3.30
3.05
3.30
11.94
12.57
MILLIMETERS
MIN
MAX
0.960
0.990
0.490
0.510
0.235
0.300
0.210
0.220
0.085
0.120
0.200
0.210
0.720
0.730
0.004
0.006
0.405
0.440
0.150
0.160
0.150
0.170
0.115
0.130
0.120
0.130
0.470
0.495
K
1
Q
2
L
B
J
E
N
H
A
U
C
EMITTER
COLLECTOR
EMITTER
BASE
CASE 316–01
ISSUE D
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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