2– 26.5 GHz GaAs MMIC
Traveling Wave Amplifier
Technical Data
HMMC-5021 (2-22 GHz)
HMMC-5022 (2-22 GHZ)
HMMC-5026 (2-26.5 GHz)
Features
• Wide-Frequency Range:
2 - 26.5 GHz
• High Gain:
9.5 dB
• Gain Flatness:
0.75 dB
• Return Loss:
Input: -14 dB
Output: -13 dB
• Low-Frequency Operation
Capability:
< 2 GHz
• Gain Control:
35 dB Dynamic Range
• Moderate Power:
20 GHz: P
-1dB
: 18 dBm
P
sat
: 20 dBm
26.5 GHz: P
-1dB
: 15 dBm
P
sat
: 17 dBm
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
2980 x 770
µm
(117.3 x 30.3 mils)
±
10
µm
(± 0.4 mils)
127
±
15
µm
(5.0
±
0.6 mils)
75 x 75
µm
(2.95 x 2.95 mils), or larger
Absolute Maximum Ratings
Symbol
V
DD
I
DD
V
G1
I
G1
V
G2[2]
I
G2
P
DC
P
in
T
ch
T
case
T
STG
T
max
Parameters/Conditions
Positive Drain Voltage
Total Drain Current
First Gate Voltage
First Gate Current
Second Gate Voltage
Second Gate Current
DC Power Dissipation
CW Input Power
Operating Channel Temp.
Operating Case Temp.
Storage Temperature
Maximum Assembly Temp.
(for 60 seconds maximum)
Units
V
mA
V
mA
V
mA
watts
dBm
°C
°C
°C
°C
-55
-65
+165
+300
-5
-9
-2.5
-7
2.0
23
+150
Min.
Max.
[1]
8.0
250
0
+
5
+3.5
Description
The HMMC-5021/22/26 is a
broadband GaAs MMIC Traveling
Wave Amplifier designed for high
gain and moderate output power
over the full 2 to 26.5 GHz fre-
quency range. Seven MESFET
cascode stages provide a flat gain
response, making the
HMMC-5021/22/26 an ideal
wideband gain block. Optical
lithography is used to produce
gate lengths of
≈
0.4
µm.
The
HMMC-5021/22/26 incorporates
advanced MBE technology,
Ti-Pt-Au gate metallization,
silicon nitride passivation, and
polyimide for scratch protection.
5965-5449E
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. T
A
= 25°C except for T
ch
, T
STG
, and T
max
.
2. Minimum voltage on V
G2
must not violate the following: V
G2
(min) > V
DD
- 9 volts.
6-28
HMMC-5021/22/26 DC Specifications/Physical Properties,
[1]
applies to all part numbers
Symbol
I
DSS
V
p
V
G2
I
DSOFF
(V
G1
)
I
DSOFF
(V
G2
)
θ
ch-bs
Parameters and Test Conditions
Saturated Drain Current
(V
DD
= 7.0 V, V
G1
= 0 V, V
G2
= open circuit)
First Gate Pinch-off Voltage
(V
DD
= 7.0 V, I
DD
= 16 mA, V
G2
= open circuit)
Second Gate Self-Bias Voltage
(V
DD
= 7.0 V, V
G1
= 0 V)
First Gate Pinch-off Current
(V
DD
= 7.0 V, V
G1
= -3.5 V, V
G2
= open circuit)
Second Gate Pinch-Off Current
(V
DD
= 5.0 V, V
G1
= 0 V, V
G2
= -3.5 V)
Thermal Resistance
(T
backside
= 25°C)
Units
mA
V
V
mA
mA
°C/W
Min.
115
-3.5
Typ.
180
-1.5
2.1
4
8
36
Max.
250
-0.5
Note:
1. Measured in wafer form with T
chuck
= 25°C. (Except
θ
ch-bs
.)
HMMC-5021/22/26 RF Specifications,
V
DD
= 7.0 V, I
DD
(Q) = 150 mA, Z
in
= Z
o
= 50
Ω
[1]
Symbol
BW
S
21
∆S
21
RL
in(min)
RL
out(min)
Isolation
P
-1dB
P
sat
H
2(max)
Parameters/Conditions
Guaranteed Bandwidth
Small Signal Gain
Small Signal Gain Flatness
Minimum Input Return Loss
Minimum Output Return Loss
Minimum Reverse Isolation
Output Power at 1 dB Gain Comp.
Saturated Output Power
Max. Second Harm. (2 <ƒ
o
<20),
[P
o
(ƒ
o
) = 17 dBm or P
-1dB
,
whichever is less.]
Max. Third Harm. (2 <ƒ
o
< 20),
[P
o
(ƒ
o
) = 17 dBm or P
-1dB
,
whichever is less.]
Noise Figure
2.0–22.0 GHz
HMMC-5021
HMMC-5022
Units
Typ.
Min.
Typ.
Max.
2.0–26.5 GHz
HMMC-5026
Min.
Typ.
Max.
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBc
2-22
10
±
0.5
16
13
32
18
20
-25
2
8.0
10
10
20
15
17
10
±
0.5
16
13
32
18
20
-25
22
12
±
1.0
2
7.5
10
10
20
12
14
9.5
±
0.75
14
13
30
15
17
-25
26.5
12
±
1.0
-20
-20
H
3(max)
NF
dBc
dB
-34
8
-34
8
-20
-34
10
-20
Notes:
1. Small-signal data measured in wafer form with T
chuck
= 25°C. Large-signal data measured on individual devices
mounted in an HP83040 Series Modular Microcircuit Package @ T
A
= 25°C.
2. Performance may be extended to lower frequencies through the use of appropriate off-chip circuitry. Upper -3 dB
corner frequency
≈
29.5 GHz.
6-29
Applications
The HMMC-5021/22/26 series of
traveling wave amplifiers are
designed for use as general
purpose wideband gain blocks in
communication systems and
microwave instrumentation. They
are ideally suited for broadband
applications requiring a flat gain
response and excellent port
matches over a 2 to 26.5 GHz
frequency range. Dynamic gain
control and low-frequency
extension capabilities are de-
signed into these devices.
cally biased between -0.2V and
-0.5V. No other bias supplies or
connections to the device are
required for 2 to 26.5 GHz opera-
tion. See Figure 3 for assembly
information.
The auxiliary gate and drain
contacts are used only for low-
frequency performance extension
below
≈
1.0 GHz. When used,
these contacts must be AC
coupled only. (Do not attempt to
apply bias to these pads.)
The second gate (V
G2
) can be
used to obtain 35 dB (typical)
dynamic gain control. For normal
operation, no external bias is
required on this contact and its
self-bias voltage is
≈
+2.1 V.
Applying an external bias
between its open-circuit voltage
and -2.5 volts will adjust the gain
while maintaining a good
input/output port match.
Assembly Techniques
Solder die-attach using a fluxless
AuSu solder preform is the
recommended assembly method.
Gold thermosonic wedge bonding
with 0.7 mil diameter Au wire is
recommended for all bonds. Tool
force should be 22
±
1 gram, stage
temperature should be 150
±
2°C,
and ultrasonic power and dura-
tion should be 64
±
1 dB and
76
±
8 msec, respectively. The
bonding pad and chip backside
metallization is gold.
For more detailed information
see HP application note #999,
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
Biasing and Operation
These amplifiers are biased with
a single positive drain supply
(V
DD
) and a single negative gate
supply (V
G1
). The recommended
bias conditions for the
HMMC-5021/22/26 are V
DD
= 7.0V,
I
DD
= 150 mA for best overall
performance. To achieve this
drain current level, V
G1
is typi-
Drain Bias
(V
DD
)
Seven Identical Stages
Aux. Drain
RF Output
124
RF Input
124
Second Gate
Bias (V
G2
)
Temp
Diode
Sense
Single Stage Shown
Figure 1. HMMC-5021/22/26 Schematic.
Temp
Diode
Force
First Gate
Bias (V
G1
)
Aux. Gate
Note:
FET gate periphery in microns.
6-30
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
