6 – 20 GHz High-Gain Amplifier
Technical Data
HMMC-5620
Features
• Wide-Frequency Range:
6 – 20 GHz
• High Gain:
17 dB
• Gain Flatness:
±
1.0 dB
• Return Loss:
Input -15 dB
Output -15 dB
• Single Bias Supply
Operation
• Low DC Power Dissipation:
P
DC
~ 0.5 Watts
• Medium Power:
20 GHz: P
-1dB
: 12 dBm
P
sat
: 13 dBm
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
1410 x 1010
µm
(55.5 x 39.7 mils)
±
10
µm
(± 0.4 mils)
127
±
15
µm
(5.0
±
0.6 mils)
80 x 80
µm
(2.95 x 2.95 mils), or larger
Absolute Maximum Ratings
[1]
Symbol
V
DD
I
DD
P
DC
P
in
T
ch
T
case
T
STG
T
max
Parameters/Conditions
Positive Drain Voltage
Total Drain Current
DC Power Dissipation
CW Input Power
Operating Channel Temp.
Operating Case Temp.
Storage Temperature
Maximum Assembly Temp.
(for 60 seconds maximum)
Units
V
mA
watts
dBm
°C
°C
°C
°C
-55
-65
+165
+300
Min.
Max.
7.5
135
1.0
20
+160
Description
The HMMC-5620 is a wideband
GaAs MMIC Amplifier designed
for medium output power and
high gain over the 6 to 20 GHz
frequency range. Four MESFET
cascade stages provide high gain,
while the single bias supply offers
ease of use. E-Beam lithography
is used to produce gate lengths of
≈
0.3
µm.
The HMMC-5620 incor-
porates advanced MBE technol-
ogy, Ti-Pt-Au gate metallization,
silicon nitride passivation, and
polyimide for scratch protection.
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. T
A
= 25°C except for T
ch
, T
STG
, and T
max
.
5965-5442E
6-70
HMMC-5620 DC Specifications/Physical Properties
[1]
Symbol
I
DD
I
DD
θ
ch-bs
Parameters and Test Conditions
Drain Current (V
DD
= +5.0 V)
Drain Current (V
DD
= +7.0 V)
Thermal Resistance (T
backside
= 25°C)
Units
mA
mA
°C/W
Min.
70
Typ.
100
105
70
Max.
135
Note:
1. Measured in wafer form with T
chuck
= 25°C. (Except
θ
ch-bs
).
HMMC-5620 RF Specifications/Physical Properties
V
DD
= 5.0 V, I
DD
(Q) = 100 mA, Z
in
=Z
o
= 50
Ω
[1]
Symbol
BW
S
21
∆S
21
RL
in
RL
out
S
12
P
-1dB
P
sat
H
2
H
3
NF
Parameters and Test Conditions
Guaranteed Bandwidth
Small Signal Gain
Small Signal Gain Flatness
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power @ 1 dB Gain Compression
Saturated Output Power
Second Harmonic Power Level (6 < ƒ
o
< 20)
P
o
(ƒ
o
) = 10 dBm
Third Harmonic Power Level (6 < ƒ
o
< 20)
P
o
(ƒ
o
) = 10 dBm
Noise Figure
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBc
dBc
dB
Min.
6
15
Typ.
17
±
1.0
-15
-15
-55
12
13
-30
-40
9.0
Max.
20
21
±
1.25
-10
-10
Note:
1. Small-signal data measured in wafer form with T
chuck
= 25°C. Large-signal data measured on individual devices
mounted in an HP83040 Series Modular Microcircuit Package at T
A
= 25°C.
6-71
HMMC-5620 Applications
The HMMC-5620 amplifier is
designed for use as a general
purpose wideband, high gain
stage in communication systems
and microwave instrumentation.
It is ideally suited for broadband
applications requiring high gain
and excellent port matches over a
6 to 20 GHz frequency range.
Both RF input and output ports
are AC-coupled on chip.
other bias supplies or connections
to the device are required for 6 to
20 GHz operation. See Figure 3 for
assembly information.
tion should be 64
±
1 dB and
76
±
8 msec, respectively. The
bonding pad and chip backside
metallization is gold.
For more detailed information
see HP application note #999
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
Assembly Techniques
Solder die-attach using a fluxless
AuSu solder preform is the
recommended assembly method.
Gold thermosonic wedge bonding
with 0.7 or 1.0 mil diameter Au
wire is recommended for D.C.
bonds. For RF bonds, MWTC
recommends low inductance
mesh interconnections for best
return loss performance. Tool
force should be 22
±
1 gram, stage
temperature should be 150
±
2°C,
and ultrasonic power and dura-
Biasing and Operation
This amplifier is biased with a
single positive drain supply (V
DD
).
The recommended bias for the
HMMC-5620 is V
DD
= 5.0 V, which
results in I
DD
= 100 mA (Typ.). No
Drain Bias
FEEDBACK
NTWK
FEEDBACK
NTWK
FEEDBACK
NTWK
FEEDBACK
NTWK
RF Output
MATCHING
MATCHING
RF Input
MATCHING
MATCHING
5
5
MATCHING
5
5
GND
GND
GND
GND
GND
GND
GND
GND
Figure 1. HMMC-5620 Schematic.
6-72
V
DD
RF
Input
RF
Output
Chip ID No.
875 (V
DD
Pad)
910 (Center of V
DD
Pad)
1010
(±10)
350
350
0
85
0 (RF Input Pad)
1325
(RF Output Pad)
1410
(±10)
Notes:
All dimensions in microns.
RF Pad Dim: 80 x 80
µm.
V
DD
Pad Dim: 110 x 90
µm
All other dimensions:
±5 µm
(unless otherwise noted).
Chip thickness: 127
±
15
µm.
Figure 2. HMMC-5620 Bonding Pad Locations.
68 pF Chip Capacitor
L
≥2
nH
(1.0 mil Gold Wire Bond
with length
≥100
mils)
Gold Plated Shim
Input and Output Thin Film
Circuits with 50 ohm transmission
lines. (2 places)
V
DD
RF IN RF OUT
2.0 mil
nom. gap
Figure 3. HMMC-5620 Assembly Diagram. (For 6.0 – 20.0 GHz Operation)
6-73
HMMC-5620 Typical Performance
23
SMALL-SIGNAL GAIN, S
21
(dB)
V
DD
= 5.0 V, I
DD
= 100 mA
[1]
–35
REVERSE ISOLATION, S
12
(dB)
–40
18
–45
–50
13
–55
–60
8
–65
–70
–75
3
2 4 6 8 10 12 14 16 18 20 22 24 26.5
FREQUENCY (GHz)
INPUT RETURN LOSS, S
11
(dB)
–5
–10
–15
–20
–25
–30
V
DD
= 5.0 V, I
DD
= 100 mA
[1]
–5
–10
–15
–20
–25
–30
OUTPUT RETURN LOSS, S
22
(dB)
–35
–35
2 4 6 8 10 12 14 16 18 20 22 24 26.5
FREQUENCY (GHz)
Figure 4. Typical Gain and Reverse
Isolation vs. Frequency.
Figure 5. Typical Input and Output
Return Loss vs. Frequency.
Typical Scattering Parameters
[1]
,
(T
chuck
= 25°C, V
DD
= 5.0 V, I
DD
= 100 mA, Z
in
= Z
o
= 50
Ω)
Freq.
GHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
26.5
dB
-10.7
-13.5
-14.6
-15.8
-18.4
-20.9
-22.2
-21.9
-20.2
-18.4
-16.7
-15.8
-15.8
-16.4
-17.5
-17.7
-16.8
-16.1
-18.5
-19.9
-14.2
-11.6
-10.3
-9.6
-9.2
-9.1
S
11
Mag.
0.292
0.212
0.186
0.162
0.120
0.090
0.078
0.080
0.097
0.120
0.146
0.161
0.163
0.151
0.134
0.130
0.145
0.156
0.119
0.101
0.195
0.263
0.306
0.330
0.347
0.349
Ang.
-100.3
-117.5
-136.6
-168.9
157.5
123.0
83.1
41.3
6.6
-21.0
-46.4
-70.0
-90.0
-105.6
-115.4
-114.1
-118.4
-131.6
-143.8
-108.1
-107.7
-125.6
-142.2
-157.2
-169.9
-357.4
dB
-46.1
-74.1
-63.1
-60.4
-66.5
-62.7
-61.3
-66.5
-68.1
-60.0
-58.3
-62.7
-59.3
-57.5
-57.1
-55.6
-62.3
-59.7
-52.5
-53.2
-59.3
-54.0
-75.8
-53.5
-59.0
-54.9
S
21
Mag.
0.0049
0.0002
0.0007
0.0010
0.0005
0.0007
0.0009
0.0005
0.0004
0.0010
0.0012
0.0007
0.0011
0.0013
0.0014
0.0017
0.0008
0.0010
0.0024
0.0022
0.0011
0.0020
0.0002
0.0021
0.0011
0.0018
Ang.
-174.7
114.0
-122.1
-161.8
162.7
-175.3
-178.0
-62.4
-159.3
-113.5
-112.2
-130.0
-161.1
173.9
-165.9
175.5
98.2
112.8
72.9
-7.1
-8.0
-54.4
-158.2
-165.8
-137.5
78.2
dB
-6.2
3.5
13.0
16.0
16.7
16.3
16.0
16.0
16.1
16.3
16.6
17.0
17.3
17.4
17.5
17.3
17.0
16.7
16.0
15.3
10.7
5.4
0.3
-4.5
-9.0
-11.2
S
12
Mag.
0.491
1.489
4.486
6.310
6.839
6.531
6.310
6.310
6.383
6.531
6.761
7.079
7.328
7.413
7.499
7.328
7.079
6.839
6.310
5.842
3.414
1.857
1.034
0.595
0.355
0.275
Ang.
-52.2
-170.0
82.2
-26.5
-116.8
173.2
114.2
60.2
9.0
-40.7
-89.9
-139.4
170.1
118.6
66.0
12.3
-43.1
-101.9
-168.5
119.8
54.2
-0.4
-47.5
-90.5
-131.1
-511.3
dB
-8.1
-10.1
-12.7
-21.7
-25.7
-22.1
-21.7
-22.5
-23.2
-23.4
-21.5
-19.1
-17.2
-16.0
-15.5
-15.5
-16.5
-17.7
-20.8
-20.4
-14.9
-12.0
-10.3
-9.0
-7.9
-7.4
S
22
Mag.
0.395
0.311
0.232
0.082
0.052
0.079
0.082
0.075
0.070
0.067
0.084
0.111
0.137
0.159
0.168
0.167
0.149
0.130
0.091
0.096
0.179
0.250
0.306
0.353
0.402
0.426
Ang.
-152.2
-171.5
136.5
61.5
-86.6
-131.4
-150.6
-156.7
-152.9
-143.0
-136.8
-133.7
-143.0
-152.8
-167.9
-179.7
162.9
145.2
93.0
-4.3
-63.6
-93.3
-110.4
-124.2
-134.3
-140.2
Note:
1. Data obtained from on-wafer measurements.
6-74
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
