BYG21K & BYG21M
Vishay General Semiconductor
Fast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Soft recovery characteristic
• Fast reverse recovery time
DO-214AC (SMA)
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
t
rr
E
R
T
j
max.
1.5 A
800 V, 1000 V
30 A
1.0 µA
1.6 V
120 ns
20 mJ
150 °C
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and free-wheeling diodes for
consumer, automotive and telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I
(BR)R
= 1 A, T
j
= 25 °C
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
R
T
J
, T
STG
SYMBOL
BYG21K
BYG21K
800
1.5
30
20
- 55 to + 150
BYG21M
BYG21M
1000
V
A
A
mJ
°C
UNIT
Document Number 88961
05-Jul-06
www.vishay.com
1
BYG21K & BYG21M
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage
(1)
Maximum reverse current
Maximum reverse
recovery time
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
TEST CONDITIONS
at I
F
= 1 A
I
F
= 1.5 A
at V
R
= V
RRM
T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
SYMBOL
V
F
I
R
t
rr
BYG21K
1.5
1.6
1
10
120
BYG21M
UNIT
V
µA
ns
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance - Junction lead T
L
= const.
Typical thermal resistance - Junction Ambient
SYMBOL
R
thJL
R
θJA
BYG21K
25
150
(1)
125
(2)
100
(3)
BYG21M
UNIT
°C/W
°C/W
Note:
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm
2
35 µm Cu
(3) Mounted on Al-oxide-ceramic (Al
2
O
3
), 50 mm
2
35 µm Cu
ORDERING INFORMATION
PREFERRED P/N
BYG21K-E3/TR
BYG21K-E3/TR3
UNIT WEIGHT (g)
0.064
0.064
PACKAGE CODE
TR
TR3
BASE Q’TY
1800
7500
DELIVERY MODE
7" Diameter Plastic Tape & Reel
13" Diameter Plastic Tape & Reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
10.000
1.6
V
R
=
V
RRM
half sine-wave
R
thJA
= 25 K/W
1.2
1.0
0.8
R
thJA
= 125 K/W
0.6
0.4
R
thJA
= 150 K/W
0.2
T
J
= 150 °C
Forward Current (A)
1.000
T
J
= 25 °C
0.100
0.010
Average Forward Current (A)
1.4
0.001
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
25
50
75
100
125
150
Forward
Voltage
(V)
Ambient Temperature (°C)
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Max. Average Forward Current vs. Ambient Temperature
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Document Number 88961
05-Jul-06
BYG21K & BYG21M
Vishay General Semiconductor
100
200
T
amb
= 125 °C
Reverse Recovery Charge (nC)
V
R
=
V
RRM
T
amb
= 100 °C
150
T
amb
= 75 °C
T
amb
= 50 °C
100
Reverse Current (µA)
10
T
amb
= 25 °C
50
I
R
= 0.5 A, i
R
= 0.125 A
1
25
50
75
100
125
150
0
0
0.2
0.4
0.6
0.8
1.0
Junction Temperature (°C)
Forward Current (A)
Figure 3. Reverse Current vs. Junction Temperature
Figure 6. Max. Reverse Recovery Charge vs. Forward Current
120
Thermal Resistance for Pulse Cond. (K/W)
1000
Reverse Power Dissipation (mW)
V
R
=
V
RRM
100
125 K/W DC
100
t
p
/T = 0.5
t
p
/T = 0.2
t
p
/T = 0.1
10
t
p
/T = 0.05
t
p
/T = 0.02
t
p
/T = 0.01
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
80
P
R
- Limit
at 100
% V
R
60
P
R
- Limit
at
80 % V
R
40
20
0
25
50
75
100
125
150
Junction Temperature (°C)
Pulse Length (s)
Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature
Figure 7. Thermal Response
25
f = 1 MHz
Diode Capacitance (pF)
20
15
10
5
0
0.1
1.0
10
100
Reverse
Voltage
(V)
Figure 5. Diode Capacitance vs. Reverse Voltage
Document Number 88961
05-Jul-06
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3
BYG21K & BYG21M
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
0.066 MIN.
(1.68 MIN.)
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
0.074 MAX.
(1.88 MAX.)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
0.090 (2.29)
0.078 (1.98)
0.208
(5.28) REF
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
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Document Number 88961
05-Jul-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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