v01.1003
MICROWAVE CORPORATION
HMC490
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 17 GHz
Features
Noise Figure: 2 dB
+26 dBm P1dB
Gain: 27 dB
+35 dBm Output IP3
+5V Supply
50 Ohm Matched Input/Output
1
AMPLIFIERS - CHIP
Typical Applications
The HMC490 is ideal for use as either a LNA or
driver amplifier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Functional Diagram
General Description
The HMC490 is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier which
operates between 12 and 17 GHz. The HMC490
provides 27 dB of gain, 2 dB noise figure and an
output IP3 of 35 dBm from a +5.0 V supply voltage.
The amplifier chip can easily be integrated into
Multi-Chip-Modules (MCMs) due to its small size.
All data is tested with the chip in a 50 Ohm test
fixture connected via 0.025mm (1 mil) diameter
wire bonds of minimal length 0.31mm (12 mils).
Electrical Specifications,
T
A
= +25° C, Vdd = 5V, Idd = 200 mA*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.)
22
24
Min.
Typ.
12 - 14
26.5
0.03
2.5
8
8
25
27
32
200
23
0.04
24
Max.
Min.
Typ.
14 - 17
27
0.03
2.0
12
9
26
28
35
200
0.04
Max.
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
* Adjust Vgg between -2.0 to 0V to achieve Idd = 200 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 104
v01.1003
MICROWAVE CORPORATION
HMC490
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 17 GHz
GaAs MMIC SUB-HARMONICALLY
Gain vs. Temperature
PUMPED MIXER
Broadband Gain & Return Loss
30
25
20
RESPONSE (dB)
15
10
5
0
-5
-10
-15
-20
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
S21
17 - 25 GHz
32
30
28
26
GAIN (dB)
24
22
20
18
16
14
12
10
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
+25 C
+85 C
-55 C
1
S11
S22
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
-2
+25 C
+85 C
-55 C
-4
RETURN LOSS (dB)
RETURN LOSS (dB)
-4
-6
-8
-10
-12
-14
10
11
12
13
14
15
16
17
18
10
11
12
13
14
15
16
-8
-12
+25 C
+85 C
-55 C
-16
-20
FREQUENCY (GHz)
17
18
FREQUENCY (GHz)
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
7
6
5
4
3
2
1
0
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
+25 C
+85 C
-55 C
Output IP3 vs. Temperature
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
10
11
12
13
14
15
16
FREQUENCY (GHz)
OIP3 (dBm)
+25 C
+85 C
-55 C
17
18
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 10
AMPLIFIERS - CHIP
MICROWAVE CORPORATION
v01.1003
HMC490
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 17 GHz
1
AMPLIFIERS - CHIP
P1dB vs. Temperature
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
10
11
12
13
14
15
16
FREQUENCY (GHz)
Psat vs. Temperature
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
10
11
12
13
14
15
16
FREQUENCY (GHz)
P1dB (dBm)
+25 C
+85 C
-55 C
Psat (dBm)
+25 C
+85 C
-55 C
17
18
17
18
Gain & Noise Figure vs. Supply Voltage
@ 14 GHz, Idd= 200 mA
30
29
28
27
GAIN (dB)
26
25
24
23
22
21
20
3
3.25 3.5 3.75
4
4.25 4.5 4.75
Vdd (Vdc)
5
Gain
Noise Figure
Power Compression @ 14 GHz
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
-20 -18 -16 -14 -12 -10 -8
Pout (dBm), GAIN (dB), PAE (%)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
5.25 5.5
NOISE FIGURE (dB)
Pout (dBm)
Gain (dB)
PAE (%)
-6
-4
-2
0
2
4
6
8
INPUT POWER (dBm)
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
-70
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
+25 C
+85 C
-55 C
Gain, Noise Figure & IP3 vs.
Supply Current @ 14 GHz, Vdd= 5V*
34
32
GAIN (dB), OIP3 (dBm)
30
28
26
24
22
20
18
16
14
100
125
Gain
OIP3
Noise Figure
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
200
NOISE FIGURE (dB)
150
Idd (mA)
175
* Idd is controlled by varying Vgg
1 - 106
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
v01.1003
HMC490
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 17 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
Gate Bias Voltage (Vgg1, Vgg2, Vgg3)
RF Input Power (RFin)(Vdd = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 29 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+5.5 Vdc
-4.0 to 0 Vdc
+10 dBm
175 °C
2.65 W
Typical Supply Current vs. Vdd
Vdd (Vdc)
+4.5
+5.0
+5.5
+3.0
+3.5
Idd (mA)
191
200
208
189
200
208
1
34 °C/W
-65 to +150 °C
-55 to +85 °C
+4.0
Note: Amplifier will operate over full voltage ranges shown above.
Vgg adjusted to achieve Idd= 200 mA at +5.0V and +3.5V.
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 10
AMPLIFIERS - CHIP
MICROWAVE CORPORATION
v01.1003
HMC490
GaAs PHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 17 GHz
1
AMPLIFIERS - CHIP
Pad Descriptions
Pin Number
Function
Description
Interface Schematic
1,8, 7
Vgg1, 2, 3
Gate control for amplifier. Adjust to achieve Id of 200 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
0.01
µ
F are required.
2
RF IN
This pad is AC coupled and matched to 50 Ohms from
12 - 17 GHz.
3, 4, 5
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.01
µ
F are required.
4
RF OUT
This pad is AC coupled and matched to 50 Ohms from
12 - 17 GHz.
Die Bottom
GND
Die Bottom must be connected to RF/DC ground.
1 - 108
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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