MICROWAVE CORPORATION
v00.0204
HMC479ST89
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
Features
P1dB Output Power: +18 dBm
Gain: 15 dB
Output IP3: +33 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +12V
Industry Standard SOT89 Package
8
AMPLIFIERS - SMT
Typical Applications
The HMC479ST89 is an ideal RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
General Description
The HMC479ST89 is a SiGe Heterojunction Bipolar
Transistor (HBT) Gain Block MMIC SMT amplifier
covering DC to 5 GHz. Packaged in an industry
standard SOT89, the amplifier can be used as a
cascadable 50 Ohm RF/IF gain stage as well as a
LO or PA driver with up to +20 dBm output power.
The HMC479ST89 offers 15 dB of gain with a +33
dBm output IP3 at 850 MHz while requiring only 75
mA from a single positive supply. The Darlington
feedback pair used results in reduced sensitivity
to normal process variations and excellent gain
stability over temperature while requiring a minimal
number of external bias components.
Electrical Specifications,
Vs= 8.0 V, Rbias= 51 Ohm, T
A
= +25° C
Parameter
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5.0 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 1.0 GHz
1.0 - 5.0 GHz
DC - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.5 GHz
2.5 - 4.0 GHz
4.0 - 5.0 GHz
DC - 3.0 GHz
3.0 - 5.0 GHz
Min.
12.5
11.5
10.5
9.5
8.5
Typ.
15
13.5
12.5
11.5
10.5
0.008
12
16
18
22
20
22
18
18
16
14
13
11
33
30
25
23
4.0
4.5
75
Max.
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Gain
Gain Variation Over Temperature
Input Return Loss
0.012
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
15
13
11
10
8
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
8 - 274
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0204
HMC479ST89
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
Broadband Gain & Return Loss
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
0
1
2
Gain vs. Temperature
20
18
16
14
GAIN (dB)
+25C
+85C
-40C
8
RESPONSE (dB)
12
10
8
6
4
2
0
3
4
5
6
7
8
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
INPUT RETURN LOSS (dB)
-5
-10
-15
-20
-25
-30
0
1
2
3
4
5
6
FREQUENCY (GHz)
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
OUTPUT RETURN LOSS (dB)
-5
-10
-15
-20
-25
-30
-35
-40
0
1
2
3
4
5
6
FREQUENCY (GHz)
+25C
+85C
-40C
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
+25C
+85C
-40C
Noise Figure vs. Temperature
10
9
+25C
+85C
-40C
-5
8
NOISE FIGURE (dB)
7
6
5
4
3
2
1
-10
-15
-20
-25
1
2
3
4
5
6
FREQUENCY (GHz)
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 27
AMPLIFIERS - SMT
S21
S11
S22
v00.0204
MICROWAVE CORPORATION
HMC479ST89
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
8
AMPLIFIERS - SMT
P1dB vs. Temperature
22
20
18
16
P1dB (dBm)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
+25C
+85C
-40C
Psat vs. Temperature
22
20
18
16
Psat (dBm)
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
+25C
+85C
-40C
14
Output IP3 vs. Temperature
40
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 72 mA @ 850 MHz
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
5
6
7
8
9
Vs (Vdc)
35
OIP3 (dBm)
30
25
+25C
+85C
-40C
20
15
0
1
2
3
4
5
6
FREQUENCY (GHz)
Gain
P1dB
Psat
OIP3
10
11
12
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, R
BIAS
= 51 Ohms
82
80
78
Icc (mA)
76
74
72
70
68
66
3.8
-40C
+25C
+85C
3.9
4
4.1
4.2
Vcc (Vdc)
4.3
4.4
4.5
4.6
8 - 276
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
v00.0204
MICROWAVE CORPORATION
HMC479ST89
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFin)(Vcc = +4.2 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 14.76 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
+6.0 Vdc
+17 dBm
150 °C
0.960 W
8
67.6 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH
THE “MICRO-X PACKAGE”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 27
AMPLIFIERS - SMT
v00.0204
MICROWAVE CORPORATION
HMC479ST89
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5.0 GHz
8
AMPLIFIERS - SMT
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to
RF/DC ground.
Application Circuit
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Bias Resistor Values
for Icc= 75 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
R
BIAS
V
ALUE
R
BIAS
P
OWER
R
ATING
5V
13
Ω
1/8 W
6V
27
Ω
1/4 W
8V
51
Ω
1/2 W
10V
82
Ω
1/2 W
12V
110
Ω
1W
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
L1
C1, C2
270 nH
0.01 µF
900
56 nH
100 pF
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5000
6.8 nH
100 pF
8 - 278
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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