v00.0504
MICROWAVE CORPORATION
HMC469MS8G
Features
+18 dBm P1dB Output Power
15 dB Gain
Output IP3: +34 dBm
Supply (Vs): +5V to +12V
14.9 mm
2
Ultra Small 8 Lead MSOP
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
8
AMPLIFIERS - SMT
Typical Applications
The HMC469MS8G is a dual RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
General Description
Functional Diagram
The HMC469MS8G is a SiGe HBT Dual Channel
Gain Block MMIC SMT amplifier covering DC to
5 GHz. This versatile product contains two gain
blocks, packaged in a single 8 lead plastic MSOP,
for use as either separate cascadable 50 Ohm RF/IF
gain stages, LO or PA drivers or with both amplifiers
combined utilizing external 90° hybrids to create
a high linearity driver amplifier. Each amplifier in
the HMC469MS8G offers 15 dB of gain, +18dBm
P1dB with a +34 dBm output IP3 at 850 MHz while
requiring only 75 mA from a single positive supply.
The combined dual amplifier circuit delivers up
to +20 dBm P1dB with +35dBm OIP3 for specific
application bands through 4 GHz.
Electrical Specifications,
Vs= 8.0 V, Rbias= 51 Ohm, T
A
= +25° C
Parameter
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5.0 GHz
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.5 GHz
2.5 - 4.0 GHz
4.0 - 5.0 GHz
DC - 3.0 GHz
3.0 - 5.0 GHz
Min.
12.5
11
10
9
7.5
Typ.
15
13
12
11
9.5
0.008
12
10
8
14
10
8
6
18
18
16
14
12.5
11
34
30
25
23
4.0
5.0
75
Max.
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Gain
Gain Variation Over Temperature
Input Return Loss
0.012
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
15
13
11
9.5
8
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output. All specifications refer to a single amplifier.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 306
v00.0504
MICROWAVE CORPORATION
HMC469MS8G
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Broadband Gain & Return Loss
20
15
10
RESPONSE (dB)
5
GAIN (dB)
0
-5
-10
-15
-20
-25
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
20
18
16
14
12
10
8
6
4
2
0
1
2
3
4
5
6
FREQUENCY (GHz)
+25C
+85C
-40C
8
Input Return Loss vs. Temperature
0
INPUT RETURN LOSS (dB)
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
OUTPUT RETURN LOSS (dB)
+25C
+85C
-40C
-5
-5
-10
-10
-15
-15
-20
0
1
2
3
4
5
6
FREQUENCY (GHz)
-20
0
1
2
3
4
5
6
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
+25C
+85C
-40C
Noise Figure vs. Temperature
10
9
+25C
+85C
-40C
-5
8
NOISE FIGURE (dB)
7
6
5
4
3
2
1
-10
-15
-20
-25
1
2
3
4
5
6
FREQUENCY (GHz)
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
Data shown is of a single amplifier.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 30
AMPLIFIERS - SMT
v00.0504
MICROWAVE CORPORATION
HMC469MS8G
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
8
AMPLIFIERS - SMT
P1dB vs. Temperature
22
20
18
16
P1dB (dBm)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
+25C
+85C
-40C
Psat vs. Temperature
22
20
18
16
Psat (dBm)
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
+25C
+85C
-40C
14
Output IP3 vs. Temperature
40
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 75 mA @ 850 MHz
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
5
6
7
8
9
Vs (Vdc)
35
OIP3 (dBm)
30
25
+25C
+85C
-40C
20
15
0
1
2
3
4
5
6
FREQUENCY (GHz)
Gain
P1dB
Psat
OIP3
10
11
12
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, R
BIAS
= 51 Ohms
82
80
78
Icc (mA)
76
74
72
70
68
66
3.8
-40C
+25C
+85C
Cross Channel Isolation
0
-5
PATH ISOLATION (dB)
-10
-15
-20
-25
-30
-35
-40
-45
INPUT1-OUTPUT2
INPUT2-OUTPUT1
3.9
4
4.1
4.2
Vcc (Vdc)
4.3
4.4
4.5
4.6
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
Data shown is of a single amplifier.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 308
v00.0504
MICROWAVE CORPORATION
HMC469MS8G
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Gain*
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
0.5
Input & Output Return Loss *
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
-35
-40
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
FREQUENCY (GHz)
INPUT RETURN LOSS
OUTPUT RETURN LOSS
8
+25C
+85C
-40C
Reverse Isolation*
0
-5
REVERSE ISOLATION (dB)
-10
-15
-20
-25
-30
-35
-40
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
Output IP3*
40
35
OIP3 (dBm)
30
+25C
+85C
-40C
25
20
1.4
1.6
1.8
2
2.2
2.4
2.6
FREQUENCY (GHz)
Output P1dB*
22
20
18
16
14
12
10
1.4
+25C
+85C
-40C
Output Psat*
22
20
18
16
14
12
10
1.4
+25C
+85C
-40C
P1dB (dBm)
1.6
1.8
2
2.2
2.4
2.6
Psat (dBm)
1.6
1.8
2
2.2
2.4
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
* Measurements shown are of both channels with 1.5 - 2.5 GHz 90° splitter/combiners on input & output
(see application circuit for balanced operation).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 30
AMPLIFIERS - SMT
GAIN (dB)
v00.0504
MICROWAVE CORPORATION
HMC469MS8G
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
8
AMPLIFIERS - SMT
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Collector Bias Current (Icc)
RF Input Power (RFin)(Vcc = +4.2 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 29.58 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+6.0 Vdc
100 mA
+17 dBm
150 °C
1.92 W
33.8 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
8 - 310
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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