MICROWAVE CORPORATION
v00.0703
HMC462
Features
Noise Figure: 2 dB @ 10 GHz
Gain: 15 dB
P1dB Output Power: +15 dBm @ 10 GHz
Self-Biased: +5.0V @ 63 mA
50 Ohm Matched Input/Output
3.12 mm x 1.38 mm x 0.1 mm
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz
1
AMPLIFIERS - CHIP
Typical Applications
The HMC462 Wideband LNA is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
General Description
The HMC462 is a GaAs MMIC PHEMT Low Noise
Distributed Amplifier die which operates between 2
and 20 GHz. The amplifier provides 15 dB of gain,
2.0 to 2.5 dB noise figure and +15 dBm of output
power at 1 dB gain compression while requiring
only 63 mA from a single +5V supply. Gain flatness
is excellent at ±0.5 dB from 6 - 18 GHz making the
HMC462 ideal for EW, ECM and RADAR applica-
tions. The HMC462 requires a single supply of
+5V @ 63 mA and is the self-biased version of the
HMC463. The wideband amplifier I/Os are inter-
nally matched to 50 Ohms facilitating easy integra-
tion into Multi-Chip-Modules (MCMs). All data is
with the chip in a 50 Ohm test fixture connected
via 0.025mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils).
Electrical Specifications,
T
A
= +25° C, Vdd= 5V
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current
(Idd) (Vdd= 5V)
12.5
13.5
Min.
Typ.
2.0 - 6.0
15.5
±0.5
0.015
3.0
15
12
15.5
18
26.5
63
11
0.025
4.0
13
Max.
Min.
Typ.
6.0 - 18.0
15
±0.5
0.015
2.5
20
13
14
16
25.5
63
9.5
0.025
3.5
12
Max.
Min.
Typ.
18.0 - 20.0
14
±0.5
0.015
3.0
14
8
12.5
15.5
24
63
0.025
3.7
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
1 - 76
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
v00.0703
MICROWAVE CORPORATION
HMC462
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz
Gain & Return Loss
20
15
10
RESPONSE (dB)
5
0
-5
-10
-15
-20
-25
-30
0
2
4
6
8
10
12
14
16
18
20
22
24
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
20
18
16
14
GAIN (dB)
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
+25C
+85C
-40C
1
Input Return Loss vs. Temperature
0
INPUT RETURN LOSS (dB)
-5
-10
-15
-20
-25
-30
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
OUTPUT RETURN LOSS (dB)
+25C
+85C
-40C
-5
-10
-15
-20
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
-10
-20
-30
-40
-50
-60
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
+25C
+85C
-40C
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
+25C
+85C
-40C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 77
AMPLIFIERS - CHIP
v00.0703
MICROWAVE CORPORATION
HMC462
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz
1
AMPLIFIERS - CHIP
GaAs MMIC SUB-HARMONICALLY
Psat vs. Temperature
PUMPED MIXER
P1dB vs. Temperature
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
0
2
4
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
0
2
4
6
8
10
17 - 25 GHz
+25C
+85C
-55C
P1dB (dBm)
+25C
+85C
-40C
6
8
10
12
14
16
18
20
22
Psat (dBm)
12
14
16
18
20
22
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
0
2
4
6
Gain, Power, Noise Figure & Supply
Current vs. Supply Voltage @ 10 GHz
GAIN (dB), P1dB (dBm), NOISE FIGURE (dB)
20
18
16
14
12
10
8
6
4
2
0
4.5
5
5.5
6
6.5
7
7.5
8
Gain
P1dB
Noise Figure
74
72
70
68
66
Idd (mA)
64
62
60
Idd
OIP3 (dBm)
+25C
+85C
-40C
58
56
54
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Vdd SUPPLY VOLTAGE (Vdc)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFin)(Vdd = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 50 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+9.0 Vdc
+23 dBm
175 °C
4.5 W
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
+5.0
+5.5
+7.0
Idd (mA)
62
63
64
65
66
67
20 °C/W
-65 to +150 °C
-55 to +85 °C
+7.5
+8.0
1 - 78
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
v00.0703
MICROWAVE CORPORATION
HMC462
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz
Outline Drawing
1
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
Pad Descriptions
Pad Number
1
Function
RFIN
Description
This pad is AC coupled and matched to 50 Ohms
from 2.0 - 20.0 GHz
Interface Schematic
2
Vdd
Power supply voltage for the amplifier.
External bypass capacitors are required
3
RFOUT
This pad is AC coupled and matched to 50 Ohms
from 2.0 - 20.0 GHz
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 79
AMPLIFIERS - CHIP
v00.0703
MICROWAVE CORPORATION
HMC462
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz
1
AMPLIFIERS - CHIP
Assembly Diagram
1 - 80
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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