PD - 91299C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
Product Summary
Part Number Radiation Level
IRHM9250
100K Rads (Si)
IRHM93250
300K Rads (Si)
IRHM9250
JANSR2N7423
200V, P-CHANNEL
REF: MIL-PRF-19500/662
RAD-Hard HEXFET
TECHNOLOGY
™
®
R
DS(on)
I
D
QPL Part Number
0.315Ω -14A
JANSR2N7423
0.315Ω -14A
JANSF2N7423
International Rectifier’s RAD-Hard HEXFET
®
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-254AA
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
➀
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-14
-9.0
-56
150
1.2
±20
500
-14
15
-41
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical )
g
For footnotes refer to the last page
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1
1/29/02
IRHM9250
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
—
-0.24
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.315
0.33
-4.0
—
-25
-250
-100
100
200
45
85
60
240
225
220
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -9.0A
➃
VGS = -12V, ID = -14A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -9.0A
➃
VDS= -160V ,VGS=0V
VDS = -160V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -14A
VDS = -100V
VDD = -100V, ID = -14A
VGS = -12V, RG = 2.35Ω
BVDSS
Drain-to-Source Breakdown Voltage
-200
∆BV
DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
—
VGS(th)
Gate Threshold Voltage
-2.0
g fs
Forward Transconductance
4.0
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
nA
nC
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
C iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4200
690
160
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-14
-56
-3.6
775
7.2
Test Conditions
A
V
nS
µC
T
j
= 25°C, IS = -14A, VGS = 0V
➃
Tj = 25°C, IF = -14A, di/dt
≤
-100A/µs
VDD
≤
-50V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max Units
—
—
—
— 0.83
—
48
0.21 —
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHM9250
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
➃
On-State Resistance (TO-3)
Static Drain-to-Source
➃
On-State Resistance (TO-254AA)
Diode Forward Voltage
➃
100K Rads(Si)
1
300K Rads (Si)
2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
=-160V, V
GS
=0V
V
GS
= -12V, I
D
=-9.0A
V
GS
= -12V, I
D
=-9.0A
V
GS
= 0V, IS = -14A
Min
-200
-2.0
—
—
—
—
—
—
Max
—
-4.0
-100
100
-25
0.315
0.315
-1.9
Min
-200
-2.0
—
—
—
—
—
—
Max
—
-5.0
-100
100
-25
0.315
0.315
-1.9
1. IRHM9250 (JANSR2N7423)
2. IRHM93250 (JANSF2N7423)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
LE T
MeV/(mg/cm²))
28
36.8
Energy
(MeV)
285
305
Range
(µm)
@VGS=0V
Cu
Br
43
39
-200
-200
@VGS=5V
-200
-200
VDS(V)
@VGS=10V
-200
-160
@VGS=15V
200
-75
@VGS=20V
—
—
Ion
-250
-200
VDS
-150
-100
-50
0
0
5
10
VGS
15
20
Cu
Br
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM9250
Pre-Irradiation
100
-I
D
, Drain-to-Source Current (A)
-5.0V
-I
D
, Drain-to-Source Current (A)
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
-5.0V
10
1
10
20µs PULSE WIDTH
T = 25 C
J
°
100
10
1
20µs PULSE WIDTH
T = 150 C
J
°
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -14A
-I
D
, Drain-to-Source Current (A)
2.5
T
J
= 25
°
C
T
J
= 150
°
C
2.0
1.5
1.0
0.5
10
5
6
V DS = -50V
20µs PULSE WIDTH
7
8
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHM9250
8000
-V
GS
, Gate-to-Source Voltage (V)
C, Capacitance (pF)
6000
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -14 A
16
V
DS
=
-
160V
V
DS
=
-
100V
V
DS
=
-
40V
Ciss
4000
12
C
oss
2000
8
C
rss
0
1
10
100
4
0
0
50
FOR TEST CIRCUIT
SEE FIGURE 13
100
150
200
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 25
°
C
-I
D
, Drain Current (A)
I
T
J
= 150
°
C
100
100us
10
1
1ms
0.1
0.0
V
GS
= 0 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
10ms
1000
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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