v00.1002
MICROWAVE CORPORATION
HMC392
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
Features
Gain: 15.5 dB
Noise Figure: 2.4 dB
Single Supply Voltage: +5.0V
50 Ohm Matched Input/Output
No External Components Required
Small Size: 1.3 mm x 1.0 mm x 0.1 mm
1
AMPLIFIERS - CHIP
Typical Applications
The HMC392 is ideal for use as a low noise
amplifier for:
• Point to Point Radios
• VSAT
• LO Driver for HMC Mixers
• Military EW, ECM, C I
• Space
3
Functional Diagram
General Description
The HMC392 is a GaAs MMIC Low Noise
Amplifier die which operates between 3.5 and 7.0
GHz. The amplifier provides 15.5 dB of gain, 2.4
dB noise figure, and 28 dBm IP3 from a +5.0V
supply voltage. The HMC392 has six bonding
adjustment options which allow the user to select
the bias point and output power of the device (+15
to +18 dBm). The HMC392 amplifier can easily
be integrated into Multi-Chip-Modules (MCMs)
due to its small (1.3 mm
2
) size. All data is with
the chip in a 50 Ohm test fixture connected via
0.025mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils).
Electrical Specifications,
T
A
= +25° C, Vdd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
25
13
13
Min.
Typ.
4.0 - 6.0
15.5
0.018
2.4
15
15
16
18
28
50
23
12
0.025
3.0
11.5
Max.
Min.
Typ.
3.5 - 7.0
14
0.018
2.8
10
10
16
18
28
50
0.025
3.4
Max.
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
Note: Data taken with pads PS4 and PS8 bonded to ground (state 5) unless otherwise noted.
1 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
v00.1002
MICROWAVE CORPORATION
HMC392
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
GaAs MMIC SUB-HARMONICALLY
Gain vs. Temperature
PUMPED MIXER
Broadband Gain & Return Loss
20
15
10
RESPONSE (dB)
S21
S11
S22
17 - 25 GHz
5
0
-5
-10
-15
-20
-25
2
3
4
5
+25C
+85C
-55C
6
7
8
9
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25C
+85C
-55C
Output Return Loss vs. Temperature
0
+25C
+85C
-55C
-5
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
-10
-10
-15
-15
-20
-20
-25
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
-25
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
Noise Figure vs. Temperature
5
4.5
4
NOISE FIGURE (dB)
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
+25C
+85C
-55C
3.5
3
2.5
2
1.5
1
0.5
0
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
+25C
+85C
-55C
-20
-30
-40
-50
-60
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 31
AMPLIFIERS - CHIP
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
1
GAIN (dB)
v00.1002
MICROWAVE CORPORATION
HMC392
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
1
AMPLIFIERS - CHIP
P1dB vs. Temperature
22
21
20
19
P1dB (dBm)
Psat vs. Temperature
22
21
20
19
Psat (dBm)
+25C
+85C
-55C
18
17
16
15
14
13
12
11
10
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
18
17
16
15
14
13
12
11
10
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
+25C
+85C
-55C
Output IP3 vs. Temperature
32
31
30
29
OIP3 (dBm)
Gain, Noise Figure & Power vs.
Supply Voltage @ 5.5 GHz
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
4.5
Gain (dB), Noise Figure (dB), P1dB (dBm)
28
27
26
25
24
23
22
21
20
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
+25C
+85C
-55C
Gain
Noise Figure
P1dB
4.75
5
Vs (Vdc)
5.25
5.5
P1dB vs. Power Select State
22
21
20
19
P1dB (dBm)
Gain & Noise Figure vs.
Power Select State
18
16
GAIN, NOISE FIGURE (dB)
14
12
10
8
6
4
2
0
Gain State 1
Gain State 2
Gain State 3
Gain State 4
Gain State 5
Gain State 6
NF State 1
NF State 2
NF State 3
NF State 4
NF State 5
NF State 6
18
17
16
15
14
13
12
11
10
3.5
4
4.5
5
5.5
State 1 Idd=75mA
State 2 Idd=62mA
State 3 Idd=55mA
State 4 Idd=65mA
State 5 Idd=50mA
State 6 Idd=46mA
6
6.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
FREQUENCY (GHz)
1 - 32
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
v00.1002
MICROWAVE CORPORATION
HMC392
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFin)(Vdd = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 8.125 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+7.0 Vdc
+15 dBm
175 °C
0.731 W
Typical Supply Current vs. Vdd
Vdd (Vdc)
+4.5
+5.0
+5.5
(State 5 Depicted)
Idd (mA)
49
50
51
1
123 °C/W
-65 to +150 °C
-55 to +85° C
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
1 - 33
AMPLIFIERS - CHIP
v00.1002
MICROWAVE CORPORATION
HMC392
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
1
AMPLIFIERS - CHIP
Pad Descriptions
Pad Number
2
Function
RF IN
Description
This pad is AC coupled and matched to 50 Ohms
from 3.5 to 7.0 GHz.
Interface Schematic
Power Select
3
4
PS3
PS4
One of these pads must be connected to ground.
See Power Select Table for selection criteria.
Power Select
7
8
9
PS7
PS8
PS9
One of these pads must be connected to ground.
See Power Select Table for selection criteria.
1, 5
Vdd,
Vdd (alt.)
Power supply voltage. Connect either pad1 or pad5 to +5V
supply. No choke inductor or bypass capacitor is needed.
6
RF OUT
This pad is AC coupled and matched to 50 Ohms
from 3.5 to 7.0 GHz.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
Power Select Table
State
1
2
3
4
5
6
Pads Bonded to Ground
PS3 & PS7
PS3 & PS8
PS3 & PS9
PS4 & PS7
PS4 & PS8
PS4 & PS9
Typical Idd (mA)
75
62
55
65
50
46
Typical P1dB (dBm)
18.4
17.9
16.4
17.7
16.9
15.5
1 - 34
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
